Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio

J. Phys. D Vol. 42 ( 4 ) page： 045112-1 2009.1

Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio

J. Phys. D Vol. 42 ( 4 ) page： 045112-1 2009.1

DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 Vol. 6 page： S772 - S775 2009

Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) Vol. 193 page： 012012_1-012012_4 2009

Language：English Publishing type：Research paper (international conference proceedings) Publisher：IOP PUBLISHING LTD

Magneto-transport in an AlGaN/GaN heterostructure has been studied at 4.2K and it was found that the magneto-resistance is negative at low fields. The negative components disappeared by inserting a thin AlN film between the AlGaN barrier layer and the GaN layer. The negative component is attributed to the presence of alloy disorder at the hetero-interface. It increases linearly followed by saturation, which is characteristic to the percolation transport in random potential.

DOI： 10.1088/1742-6596/193/1/012012

Web of Science

Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 1 ) page： 367-369 2008

Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 9 ) page： 2966-2968 2008

*Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 6 ) page： 2234?2237 2008

Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 6 ) page： 1746?1749 2008

Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 1 ) page： 367-369 2008

Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 Vol. 5 ( 6 ) page： 2234 - 2237 2008

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

InGaN/GaN light emitting diodes (LEDS) were fabricated on semi-polar (1-101) and, (11-22) GaN templates which had been grown on patterned (001) and (113)Si substrates, respectively. The GaN templates were of 300 x 300 mu m(2) discs formed by the coalescence of GaN stripes grown by selective MOVPE method. The n-type electrode was fabricated on the back surface of,the Si substrate. The elecetroluminescence (EL) peaks were observed around 440 nm and 420 nm in (14104) and (11-22) LEDs, respectively. The full width at half,maximum (FWHM) of the peaks at 20 mA were 33 nm ((1-101) LED)and 21 nm ((11-22) LED). The emission peak I was slightly blue-shifted at high drive currents, which was smaller than that of conventional c-plane LEDs, The turn-on voltage of the diodes was of the order of 3-4 V. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Web of Science

Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 Vol. 5 ( 6 ) page： 1746 - 1749 2008

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

Energy relaxation processes of photo-generated excess carriers in Mg doped GaN epitaxial layers were investigated at room temperature, with photoluminescence intensity correlation method using femto-second pulse laser as the excitation source. The decay curve Was well fitted by exponential decay with two time constants. The slow process of the order of 100 ps was attributed to the energy relaxation of electrons in the conduction band, while the fast process of the order of several pico-seconds was attributed to the capture process in the impurity band near the valence band. Little difference has been found out between the results for (0001)GaN and those for (1-101)GaN.

Web of Science

Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 5 ( 9 ) page： 2966-2968 2008

Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 ( 6 ) page： 1746 - 1749 2008

Language：English Publishing type：Research paper (international conference proceedings)

Energy relaxation processes of photo-generated excess carriers in Mg doped GaN epitaxial layers were investigated at room temperature, with photoluminescence intensity correlation method using femto-second pulse laser as the excitation source. The decay curve was well fitted by exponential decay with two time constants. The slow process of the order of 100 ps was attributed to the energy relaxation of electrons in the conduction band, while the fast process of the order of several pico-seconds was attributed to the capture process in the impurity band near the valence band. Little difference has been found out between the results for (0001)GaN and those for (1-101)GaN. © 2008 Wiley-VCH Verlag GmbH &amp
Co. KGaA.

DOI： 10.1002/pssc.200778620

Scopus

Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE Reviewed

Tanikawa, T, Rudolph, D, Hikosaka, T, Honda, Y, Yamaguchi, M, Sawaki, N

J Cryst Growth Vol. 310 ( 23 ) page： 4999 - 5002 2008

Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 ( 6 ) page： 2234 - 2237 2008

Language：English Publishing type：Research paper (international conference proceedings)

InGaN/GaN light emitting diodes (LEDs) were fabricated on semi-polar (1-101) and (11-22) GaN templates which had been grown on patterned (001) and (113)Si substrates, respectively. The GaN templates were of 300 x 300 μm 2 discs formed by the coalescence of GaN stripes grown by selective MOVPE method. The n-type electrode was fabricated on the back surface of the Si substrate. The electroluminescence (EL) peaks were observed around 440 nm and 420 nm in (1-101) and (11-22) LEDs, respectively. The full width at half maximum (FWHM) of the peaks at 20 mA were 33 nm ((1-101) LED) and 21 nm ((11-22) LED). The emission peak was slightly blue-shifted at high drive currents, which was smaller than that of conventional c-plane LEDs. The turn-on voltage of the diodes was of the order of 3-4 V. © 2008 Wiley-VCH Verlag GmbH &amp
Co. KGaA.

DOI： 10.1002/pssc.200778642

Scopus

Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

中島由樹, 本田善央, 山口雅史, 澤木宣彦

電子情報通信学会技術研究報告. CPM, 電子部品・材料 Vol. 107 ( 252 ) page： 97 - 102 2007.10

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：一般社団法人電子情報通信学会

選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

中島由樹, 本田善央, 山口雅史, 澤木宣彦

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス Vol. 107 ( 253 ) page： 97 - 102 2007.10

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：一般社団法人電子情報通信学会

Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

中島由樹, 本田善央, 山口雅史, 澤木宣彦

電子情報通信学会技術研究報告. ED, 電子デバイス Vol. 107 ( 251 ) page： 97 - 102 2007.10

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：一般社団法人電子情報通信学会

MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, N. Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 300 ( 1 ) page： 110 - 113 2007.3

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

A (1 1 1) Si micro-facet was fabricated by KOH anisotropic etching on a (0 0 1) Si substrate. On the (1 1 1) Si facet, a GaN:Zn, Si-microcrystal was grown by selective metal-organic vapor phase epitaxy using an AlN intermediate layer and covered with an AlN capping layer. The size of the AlN/GaN/AlN microcrystal was determined by that of the (1 1 1) Si facet on the substrate. The optical properties of sample were evaluated by cathodoluminescence (CL) measurement. The CL intensity of DAP emission band was enhanced by reducing the crystal size. On the other hand, in the case of samples without AlN capping layer, the CL intensity was decreased with the smaller crystals. This result suggests that the optical confinement does enhance the CL intensity in the AlN/GaN/AlN sample. (c) 2006 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.jcrysgro.2006.11.001

Web of Science

Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, Nobuhiko Sawaki

JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 19 ( 4 ) page： 046204 2007.1

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Magnetotransport measurements were performed on a series of AlxGa1-xN/GaN heterostructures with different Al compositions (x = 0.15, 0.20 and 0.30) at 4.2 K. Adopting a fast Fourier transform method, we analysed the Shubnikov de Hass oscillations due to the two-dimensional electron gas to derive the quantum scattering time (tau(q)). It was found that the quantum scattering time in the ground subband decreases with increasing Al composition: 0.194 ps (x = 0.15), 0.174 ps (x = 0.20) and 0.123 ps (x = 0.30), respectively. To discern the predominant scattering process, the scattering time limited by interface roughness, the residual impurity and the alloy disorder were investigated numerically by including inter-subband scattering. We found that enhanced interface roughness scattering dominates both the transport and quantum scattering time in the ground subband.

DOI： 10.1088/0953-8984/19/4/046204

Web of Science

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Papers - HONDA, Yoshio