Papers - HONDA, Yoshio
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Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio
J. Phys. D Vol. 42 ( 4 ) page: 045112-1 2009.1
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Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio
J. Phys. D Vol. 42 ( 4 ) page: 045112-1 2009.1
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DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 Vol. 6 page: S772 - S775 2009
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Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed
N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi
16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) Vol. 193 page: 012012_1-012012_4 2009
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Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed
E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 1 ) page: 367-369 2008
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Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed
T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 9 ) page: 2966-2968 2008
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*Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 6 ) page: 2234?2237 2008
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Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed
J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 6 ) page: 1746?1749 2008
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Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed
E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 1 ) page: 367-369 2008
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Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 Vol. 5 ( 6 ) page: 2234 - 2237 2008
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Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed
J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 Vol. 5 ( 6 ) page: 1746 - 1749 2008
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Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed
T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 9 ) page: 2966-2968 2008
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Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed
J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 ( 6 ) page: 1746 - 1749 2008
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Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 ( 6 ) page: 2234 - 2237 2008
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Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE Reviewed
Tanikawa, T, Rudolph, D, Hikosaka, T, Honda, Y, Yamaguchi, M, Sawaki, N
J Cryst Growth Vol. 310 ( 23 ) page: 4999 - 5002 2008
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Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed
中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦
電子情報通信学会技術研究報告. CPM, 電子部品・材料 Vol. 107 ( 252 ) page: 97 - 102 2007.10
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Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed
中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦
電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス Vol. 107 ( 253 ) page: 97 - 102 2007.10
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Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed
中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦
電子情報通信学会技術研究報告. ED, 電子デバイス Vol. 107 ( 251 ) page: 97 - 102 2007.10
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MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed
Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, N. Sawaki
JOURNAL OF CRYSTAL GROWTH Vol. 300 ( 1 ) page: 110 - 113 2007.3
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Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, Nobuhiko Sawaki
JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 19 ( 4 ) page: 046204 2007.1