Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed International journal

Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 3 ) 2014.3

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length. (C) 2014 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.53.030306

Web of Science

Novel activation process for Mg-implanted GaN Reviewed International journal

Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

JOURNAL OF CRYSTAL GROWTH Vol. 388 page： 112 - 115 2014.2

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H-2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ullraviolel luminescence and weaker yellow luminescence in the phololuminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H-2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. (C) 2013 Elsevier B.V. All rights reserved

DOI： 10.1016/j.jcrysgro.2013.07.011

Web of Science

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching Reviewed International journal

Ji-Su Son, Yoshio Honda, Hiroshi Amano

OPTICS EXPRESS Vol. 22 ( 3 ) page： 3585 - 3592 2014.2

Language：English Publishing type：Research paper (scientific journal) Publisher：OPTICAL SOC AMER

Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching. Subsequently, a 2-mu m-thick Si-doped a-GaN layer was regrown on the etched a-GaN layer. A fully coalescent n-type a-GaN layer with a low threading dislocation density (similar to 7.5 x 10(8) cm(-2)) and a low basal stacking fault density (similar to 1.8 x 10(5) cm(-1)) was obtained. Compared with a planar sample, the full width at half maximum of the (11-20) X-ray rocking curve was significantly decreased to 518 arcsec along the c-axis direction and 562 arcsec along the m-axis direction. (C) 2014 Optical Society of America

DOI： 10.1364/OE.22.003585

Web of Science

PubMed

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

Vol. 11 ( 3‐4 ) page： 393-396 2014

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

Vol. 115 ( 9 ) page： 94906 2014

Novel activation process for Mg-implanted GaN Reviewed

Vol. 388 page： 112-115 2014

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

Vol. 16 ( 11 ) page： 2273-2282 2014

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

page： 90030E-90030E-6 2014

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

Vol. 53 ( 5S1 ) page： 05FL01 2014

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

Vol. 22 ( 3 ) page： 3585-3592 2014

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

Vol. 11 ( 3‐4 ) page： 722-725 2014

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

Vol. 53 ( 3 ) page： 30306 2014

Recombination dynamics and internal quantum efficiency in InGaN nanowires Reviewed

Vol. 11 ( 3-4 ) page： 652 - 655 2014

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed International journal

Kouhei Yamashita, Tomohiko Sugiyama, Makoto Iwai, Yoshio Honda, Takashi Yoshino, Hiroshi Amano

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII Vol. 9003 2014

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

A GaN layer of 20 mu m thickness grown by the liquid-phase epitaxy on c-plane sapphire was used as a template for the growth of blue light-emitting diodes (LEDs) with emission peak wavelengths of about 450 nm. As the underlying layer of the active region, an InGaN/GaN superlattice or two pairs of 100 nm undoped GaN and 20 nm GaN: Si layers on an n-type GaN: Si layer was found to be effective for reducing the forward voltage. By optimizing the multiple-quantumwell structure, LEDs having a 2.5-nm-thick InGaN well and 5-nm-thick GaN barrier exhibited the highest internal quantum efficiency (IQE) at both low and high currents. This IQE was much higher than that of LEDs on a sapphire substrate. The IQE of LEDs using the liquid-phase GaN grown on sapphire substrate exceeded more than 75% at a forward current density of over 200 A/cm(2).

DOI： 10.1117/12.2038764

Web of Science

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed International journal

Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano

CRYSTENGCOMM Vol. 16 ( 11 ) page： 2273 - 2282 2014

Language：English Publishing type：Research paper (scientific journal) Publisher：ROYAL SOC CHEMISTRY

In this paper, we demonstrate a scalable process for the precise position-controlled selective growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via pulsed-mode growth parameters such as growth temperature and precursor injection and interruption durations. The diameter and length of each GaN nanowire are in the ranges of more than 240 nm and 250-1250 nm, respectively, with different vertical-to-lateral aspect ratios that depend on the growth temperature. Also, it is found that a higher growth temperature helps increase the vertical growth rate and reduces the lateral growth rate of GaN nanowire arrays. Furthermore, in the case of longer TMGa injection duration, the Ga-rich region allows the higher lateral growth rate of GaN nanostructures, which leads to a transition in the morphology from nanowires to a thin film, while in the case of longer NH3 injection duration, the surface morphology changes from nanowires to pyramidal structures. In addition, the surface structure can also be controlled by varying the precursor interruption duration. Finally, we report and discuss a growth model for GaN nanowire arrays under pulsed-mode MOCVD growth.

DOI： 10.1039/c3ce42266f

Web of Science

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed International journal

Vol. 11 ( 3-4 ) page： 722 - 725 2014

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

Vol. 11 ( 3-4 ) page： 393 - 396 2014

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

Ju, Guangxu, Kato, Yoshihiro, Honda, Yoshio, Tabuchi, Masao, Takeda, Yoshikazu, Amano, Hiroshi

physica status solidi (c) Vol. 11 ( 3‐4 ) page： 393-396 2014

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

Yamashita, Kouhei, Sugiyama, Tomohiko, Iwai, Makoto, Honda, Yoshio, Yoshino, Takashi, Amano, Hiroshi

SPIE OPTO page： 90030E-90030E-6 2014

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 53 ( 5S1 ) page： 05FL01 2014

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Papers - HONDA, Yoshio