Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer

Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, Hiroshi Amano

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 1 ) 2016.1

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two- dimensional growth step, resulting in 1.2-mu m crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices. (C) 2016 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.55.010303

Web of Science

CiNii Research

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications International journal

Akira Hirano, Yosuke Nagasawa, Masamichi Iypommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

UV and Higher Energy Photonics: From Materials to Applications Vol. 9926 2016

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat sapphire. These dies were realized on flat sapphire without using a special technique, i.e., reduction in threading dislocation density or light extraction enhancement techniques such as the use of a photonic crystal or a patterned sapphire substrate. Despite the limited light extraction efficiency of about 8% owing to light absorption at a thick p-GaN contact layer, high EQEs of approximately 6% has been reproducible between 300 and 280 nm without using special techniques. Moreover, an EQE of 3.9% has been shown at 271 nm, despite the smaller current injection efficiency (CIE). The high EQEs are thought to correspond to the high internal quantum efficiency (IQE), indicating a small room for improving IQE. Accordingly, resin encapsulation on a simple submount is strongly desired. Recently, we have succeeded in demonstrating fluorine resin encapsulation on a ceramic sheet (chip-on-board, COB) that is mass-producible. Furthermore, the molecular structure of a resin with a durability of more than 10,000 h is explained in this paper from the photochemical viewpoint. Thus, the key technologies of AlGaN-based DUV-LEDs having an EQE of 10% within a reasonable production cost have been established. The achieved efficiency makes AlGaN-based DUV-LEDs comparable to high-pressure mercury lamps.

DOI： 10.1117/12.2235398

Web of Science

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition International journal

Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano

CRYSTENGCOMM Vol. 18 ( 9 ) page： 1505 - 1514 2016

Language：English Publishing type：Research paper (scientific journal) Publisher：ROYAL SOC CHEMISTRY

To extend the availability of nanostructure-based optoelectronic applications, vertically elongated nanorods with precisely controlled morphology are required. For group III nitrides, pulsed-mode growth has recently been reported as an effective method for growing nanorod arrays with geometric precision. Here, we demonstrated the growth of arrays of highly elongated nanorods on Si substrates by metal-organic chemical vapor deposition using a pulsed-mode approach. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision. The grown nanorods showed considerably improved optical and structural properties while remaining in uniform arrays. This approach can be used with a variety of materials to obtain nanorods with high quality, high uniformity, and high aspect ratio, and it can also serve as an effective fabrication method for InAlGaN-alloyed core/shell nanostructures for optoelectronic nano-devices with ultrahigh efficiency.

DOI： 10.1039/c5ce02056e

Web of Science

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells International journal Open Access

Hideaki Murotani, Yoichi Yamada, Yoshio Honda, Hiroshi Amano

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 252 ( 5 ) page： 940 - 945 2015.5

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The radiative and nonradiative recombination lifetimes were evaluated as a function of the excitation energy density. The radiative recombination lifetime decreased and subsequently reached a nearly constant value with increasing excitation energy density, which was attributed to screening of internal electric fields by photoexcited carriers. On the other hand, the nonradiative recombination lifetime increased and subsequently decreased with increasing excitation energy density. The initial increase in the nonradiative recombination lifetime could be attributed to saturation of nonradiative recombination centers with photoexcited carriers. The nonradiative recombination lifetime was found to decrease to a considerably weaker extent than that expected for the Auger recombination process of free carriers. This indicated that the decrease in the internal quantum efficiency (IQE) at high carrier densities could not be explained only by the Auger recombination process of free carriers. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI： 10.1002/pssb.201451491

Web of Science

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

Vol. 8 ( 2 ) page： 022702 2015.2

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express Vol. 8 ( 2 ) page： 022702 2015.2

Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates International journal

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

APPLIED PHYSICS EXPRESS Vol. 8 ( 2 ) 2015.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

DOI： 10.7567/APEX.8.022702

Web of Science

CiNii Research

Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region International journal

Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Seunga Lee, Jeong Yong Lee, Dong-Seon Lee, Yoshihiro Kato, Yoshio Honda, Hiroshi Amano

NANO ENERGY Vol. 11 page： 294 - 303 2015.1

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). (C) 2014 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.nanoen.2014.11.003

Web of Science

GaN/SiC Epitaxial growth for high power and high switching speed device applications Reviewed

Zheng Sun, Shigeyoshi Usami, Di Lu, Takahiro Ishii, Marc Olsson, Kouhei Yamashita, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano

Materials Research Society Symposium Proceedings Vol. 1736 page： 65 - 69 2015

Language：English Publishing type：Research paper (international conference proceedings) Publisher：Materials Research Society

We developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH&lt
inf&gt
3&lt
/inf&gt
, TMA1 was flowed without NH&lt
inf&gt
3&lt
/inf&gt
. 1.5 μm of undoped crack-firee GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5 μm)/SiC structure (300 μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.

DOI： 10.1557/opl.2015.102

Scopus

Photocathode electron beam sources using GaN and InGaN with NEA Reviewed

T. Nishitani, T. Maekawa, M. Tabuchi, T. Meguro, Y. Honda, H. Amano

GALLIUM NITRIDE MATERIALS AND DEVICES X Vol. 9363 2015

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

A photocathode electron source using p-type GaN and p-type InGaN semiconductors with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by atoms on the surface, which makes it possible for photo excited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN and InGaN semiconductors were measured a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. Lifetime of NEA-photocathodes using the GaN and InGaN were 21 times and 7.7 times longer respectively than that using the GaAs.

DOI： 10.1117/12.2076681

Web of Science

Nature of yellow luminescence band in GaN grown on Si substrate International journal

Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 11 ) 2014.11

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

High-optical-quality GaN was grown on a (111) Si substrate by metal-organic vapor phase epitaxy using an AlInN buffer layer and an indium doped AlN nucleation layer. The photoluminescence spectra at room temperature showed a strong and narrow edge-emission peak and weak defect-related emission bands. We found four spectral peaks in the green and yellow luminescence bands at G(0): 514.5 nm (2.410 eV), G(1): 546.5nm (2.269 eV), Y-1: 553.5nm (2.240 eV), and Y-0: 584.5nm (2.121 eV), independent of the growth methods/conditions. The results suggest that the emission is associated with an intrinsic defect such as a Ga vacancy. (C) 2014 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.53.11RC02

Web of Science

Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface Reviewed International journal

Sato Daiki, Nishitani Tomohiro, Maekawa Takuya, Honda Yoshio, Amano Hiroshi

IEICE technical report. Component parts and materials Vol. 114 ( 202 ) page： 49-54 - 54 2014.9

Language：English Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

The photocathode using Negative Electron Affinity (NBA) surface on a semiconductor has been applied for science technologies such as an elemental particle experiment as an electron beam source. Yet, since NBA-surface is fragile, it is necessary to figure out how to make its life time longer in order to develop new technologies. Then, we realized that considering the band gap in semiconductor, the life time becomes longer as the negative affinity goes even smaller. Therefore, we produced the photocathodes using GaN and InGaN that have wider band gaps than that of GaAs. As a result, using GaN and InGaN, we gained 17 times and 7 times longer life time NEA-surface than that of GaAs, respectively. On the other hand, the result indicates that we can produce the NEA-surface with only cesium.

CiNii Research

P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) Reviewed International journal

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 Vol. 114 ( 58 ) page： 109-112 - 112 2014.5

Language：English Publishing type：Research paper (scientific journal) Publisher：一般社団法人電子情報通信学会

We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

CiNii Research

P-GaN by Mg Ion Implantation for Power Device Applications Reviewed

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

IEICE technical report. Component parts and materials Vol. 114 ( 57 ) page： 109-112 - 112 2014.5

Language：English Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

CiNii Research

P-GaN by Mg Ion Implantation for Power Device Applications

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

IEICE technical report. Electron devices Vol. 114 ( 56 ) page： 109-112 - 112 2014.5

Language：English Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

CiNii Research

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed International journal

Ji-Su Son, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 5 ) 2014.5

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The characteristics of nonpolar a-plane (11 (2) over bar0) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique. Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were similar to 2 x 10(9), similar to 7 x 10(8), and similar to 4 x 10(8) cm(-2), respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0 x 10(18) cm(-3), respectively. (C) 2014 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.53.05FL01

Web of Science

CiNii Research

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed International journal

Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

JOURNAL OF APPLIED PHYSICS Vol. 115 ( 9 ) 2014.3

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra. (C) 2014 AIP Publishing LLC.

DOI： 10.1063/1.4867640

Web of Science

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed International journal

Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 3 ) 2014.3

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length. (C) 2014 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.53.030306

Web of Science

CiNii Research

Novel activation process for Mg-implanted GaN International journal

Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

JOURNAL OF CRYSTAL GROWTH Vol. 388 page： 112 - 115 2014.2

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H-2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ullraviolel luminescence and weaker yellow luminescence in the phololuminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H-2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. (C) 2013 Elsevier B.V. All rights reserved

DOI： 10.1016/j.jcrysgro.2013.07.011

Web of Science

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching Reviewed International journal Open Access

Ji-Su Son, Yoshio Honda, Hiroshi Amano

OPTICS EXPRESS Vol. 22 ( 3 ) page： 3585 - 3592 2014.2

Language：English Publishing type：Research paper (scientific journal) Publisher：OPTICAL SOC AMER

Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching. Subsequently, a 2-mu m-thick Si-doped a-GaN layer was regrown on the etched a-GaN layer. A fully coalescent n-type a-GaN layer with a low threading dislocation density (similar to 7.5 x 10(8) cm(-2)) and a low basal stacking fault density (similar to 1.8 x 10(5) cm(-1)) was obtained. Compared with a planar sample, the full width at half maximum of the (11-20) X-ray rocking curve was significantly decreased to 518 arcsec along the c-axis direction and 562 arcsec along the m-axis direction. (C) 2014 Optical Society of America

DOI： 10.1364/OE.22.003585

Open Access

Web of Science

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Papers - HONDA, Yoshio