Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Optical characteristics of the AlGaN/GaN/AlGaN waveguide grown on (111)Si substrate Reviewed

H Kim, KH Kim, M Yang, HS Ain, SN Yi, T Narita, Y Honda, M Yamaguchi, N Sawaki

JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. 42 page： S622 - S624 2003.2

Language：English Publishing type：Research paper (scientific journal) Publisher：KOREAN PHYSICAL SOC

Optical characteristics of the AlGaN/CaN/AlGaN heterostructure waveguide grown on Si substrate are estimated by photoluminescence (PL) measurement. The sample wads selectively grown as triangular striped structures by metal organic vapor phase epitaxy (MOVPE). We have studied the dependence of PL characteristics of the waveguide structures on the variation of input power position. Two main peaks related to different facet's in the waveguide structures were observed.

Web of Science

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2154-2158 2003

HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

Y. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2506-2510 2003

Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 page： S622-S624 2003

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2043-2046 2003

Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S750-S752 2003

Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S219-S221 2003

HVPE growth of a thick GaN layer on a GaN templated (111)Si substrate Reviewed

Y Nishimura, Y Honda, M Yamaguchi, N Sawaki

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS Vol. 0 ( 7 ) page： 2506 - 2510 2003

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

The hydride vapour phase epitaxial (HVPE) growth of thick GaN was attempted on a (111) Si substrate. In order to avoid fatal damage to the substrate surface in the HCl ambient and to get a high growth rate, a two-step growth method was adopted; the first low growth rate step with low HCl flow rate followed by a second high growth rate step. As the result, a flat surface of thick GaN was obtained. The full width at half maximum of the photoluminescence spectra at 77 K was as narrow as 17.7 meV. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI： 10.1002/pssc.200303512

Web of Science

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111)Si substrate by selective MOVPE Reviewed

Y Honda, M Torikai, T Nakamura, Y Kuroiwa, M Yamaguchi, N Sawaki

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS Vol. 0 ( 7 ) page： 2043 - 2046 2003

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

The alloy composition of an AlGaN film grown on a GaN hexagonal pyramidal structure is studied by cathode luminescence spectroscopy. The samples are made by selective area growth mode of metal organic vapour phase epitaxy (MOVPE). It was found that the Al composition is lower than the nominal composition at the bottom of the pyramid, while it was higher than the nominal composition near the top of the pyramid. Analysing the composition as a function of the position on the facets, the diffusion length of Ga was estimated to be 310 mn and 915 nm on the (0001) and (1 (1) over bar 01) facet, respectively. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200303373

Web of Science

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

T Narita, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS Vol. 0 ( 7 ) page： 2154 - 2158 2003

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

The growth of a trapezoidal AlGaN/GaN heterostructure was attempted on a (111) Si substrate by selective area metal organic vapour phase epitaxy. On the trapezoidal sample we found that the manner of ridge growth is different in GaN growth from that in AlGaN growth. Analysing the thickness and composition with scanning electron microscopy (SEM), reflection electron microscopy (REM) and cathode luminescence (CL) spectroscopy, the diffusion length of Ga chemical species on the (0001) AlGaN surface was determined. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Web of Science

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

Tetsuo Narita, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Physica Status Solidi C: Conferences ( 7 ) page： 2154 - 2158 2003

Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1002/pssc.200303511

Scopus

Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate Reviewed

Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, IWASAKI Ryuta, SAWAKI Nobuhiko, TANJI Takayoshi

Japanese journal of applied physics. Pt. 2, Letters Vol. 41 ( 7 ) page： L846 - L848 2002.7

Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE Reviewed

Y Honda, N Kameshiro, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 242 ( 1-2 ) page： 82 - 86 2002.7

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

The selective growth of wurtzile GaN was performed by MOVPE on (1 1 1) facets on a patterned 7-degree off-oriented (0 0 1) silicon substrate, which had been prepared by anisotropic etching with KOH solution. The c-axis of the GaN was along the [1 1 1] axis of the silicon. At an early growth stage, the shape of the crystal grown selectively was a stripe having truncated triangular cross-section and its (1 (1) over bar 0 1) facet was parallel to the substrate surface. After a sufficient growth duration, the stripes coalesced with each other and a GaN film with a flat (1 (1) over bar 0 1) surface was achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Web of Science

Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE Reviewed

Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 242 ( 1-2 ) page： 77 - 81 2002.7

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

The selective growth of wurtzite GaN was performed on a (1 1 1)silicon substrate by metalorganic vapor phase epitaxy. By limiting the size of GaN to the area of 0.5 mm x 0.5 mm, a single GaN crystal without cracks was obtained. As a result, the full-width at half-maximum of the (0 0 0 4) X-ray-rocking curve as well as that of the band edge emission were much reduced as compared to the samples grown by a conventional method. (C) 2002 Elsevier Science B.V. All rights reserved.

Web of Science

Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

S Tanaka, Y Honda, N Kameshiro, R Iwasaki, N Sawaki, T Tanji

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 41 ( 7B ) page： L846 - L848 2002.7

Language：English Publishing type：Research paper (scientific journal) Publisher：INST PURE APPLIED PHYSICS

We have studied the microstructure in a (1 (1) over bar 01) GaN triangular bar and an AlGaN/GaN heterostructure formed on top of it by means of transmission electron microscopy. The nitride triangular bar was selectively grown on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy. Convergent beam electron diffraction was used to determine the lattice polarity. Threading dislocations were generated near the, interface between the unmasked (111) facet of the Si and the nitride. These dislocations bend towards either the (1 (1) over bar 01) facet or the interface between the GaN and masked ((1) over bar(1) over bar1) Si, and thread through to the facet or the interface. Dislocations were observed at the AlGaN/GaN interface. It is shown that the growth proceeded predominantly in the [0001] direction of the nitride with Ga-terminated polarity.

Web of Science

Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 102 ( 114 ) page： 25 - 28 2002.6