Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a) Vol. 208 ( 5 ) page： 1175-1178 2011.5

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a) Vol. 208 ( 5 ) page： 1175-1178 2011.5

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y. -Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

APPLIED PHYSICS LETTERS Vol. 98 ( 14 ) page： 141905 2011.4

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

In this letter, we have investigated the structural properties of thick InGaN layers grown on GaN by plasma-assisted molecular beam epitaxy, using two growth rates of 1.0 and 3.6 angstrom/s. A highly regular superlattice (SL) structure is found to be spontaneously formed in the film grown at 3.6 angstrom/s but not in the film grown at 1.0 angstrom/s. The faster grown film also exhibits superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3574607]

DOI： 10.1063/1.3574607

Web of Science

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 318 ( 1 ) page： 500-504 2011.3

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 318 ( 1 ) page： 500-504 2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE Vol. 7939 page： 79391X 2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE Vol. 7939 page： 79391X 2011.3

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)

Ching-Hsueh Chiu, Da-Wei Lin, Chien-Chung Lin, Zhen-Yu Li, Wei-Ting Chang, Hung-Wen Hsu, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

APPLIED PHYSICS EXPRESS Vol. 4 ( 3 ) 2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

SPIE Vol. 7939 page： 79391X 2011.3

Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates Reviewed

I. W. Feng, X. K. Cao, J. Li, J. Y. Lin, H. X. Jiang, N. Sawaki, Y. Honda, T. Tanikawa, J. M. Zavada

APPLIED PHYSICS LETTERS Vol. 98 ( 8 ) 2011.2

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3 degrees off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (1 (1) over bar 01) epilayers, which exhibit strong photoluminescence emission at 1.54 mu m. The observed emission intensity at 1.54 mu m was comparable to that from similar alloys grown on GaN/AlN/Al(2)O(3) templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556678]

DOI： 10.1063/1.3556678

Web of Science

Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Applied physics express Vol. 4 ( 1 ) page： "012105 - 1"-"012105-3" 2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1

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Papers - HONDA, Yoshio