Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern Reviewed

Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source

KAWAI Yohjiro, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji, Hori Masaru

The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP Vol. 2013 ( 0 ) page： 5 - 7 2013

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Mechanical Engineers

Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

DOI： 10.1299/jsmeiip.2013.5

CiNii Research

Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Component parts and materials Vol. 112 ( 33 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

CiNii Research

Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate Reviewed

Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 249 ( 3 ) page： 468 - 471 2012.3

Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate Reviewed

Sawaki Nobuhiko, Hagiwara Kiyotaka, Hikosaka Toshiki, Honda Yoshio

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 27 ( 2 ) 2012.2

Crystal Growth of Semipolar GaN on Si Substrate(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)

Honda Yoshio

Journal of the Japanese Association for Crystal Growth Vol. 38 ( 4 ) page： 241 - 248 2012

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japanese Association for Crystal Growth

(1-101) GaN and (11-22) GaN was grown by MOVPE on etched Si substrate. A characteristic of optical, electrical and impurity was evaluated on each face GaN. We also reported an Indium incorporation and a process of dislocation propagation on the (1-101) GaN in this paper.

DOI： 10.19009/jjacg.38.4_241

CiNii Research

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

Inazu Tetsuhiko, Fukahori Shinya, Pernot Cyril, Kim Myung Hee, Fujita Takehiko, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 50 ( 12 ) 2011.12

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

Kim Myunghee, Fujita Takehiko, Fukahori Shinya, Inazu Tetsuhiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

APPLIED PHYSICS EXPRESS Vol. 4 ( 9 ) 2011.9

Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes Reviewed

Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 208 ( 5 ) page： 1175 - 1178 2011.5

Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chen Yi-Chen, Ling Shih-Chun, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF CRYSTAL GROWTH Vol. 318 ( 1 ) page： 500 - 504 2011.3

Drastic Reduction of Dislocation Density in Semipolar (11(2)over-bar2) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 50 ( 1 ) 2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

Sawaki Nobuhiko, Honda Yoshio

SCIENCE CHINA-TECHNOLOGICAL SCIENCES Vol. 54 ( 1 ) page： 38 - 41 2011.1

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

APPLIED PHYSICS EXPRESS Vol. 4 ( 1 ) 2011.1

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

Sugiura Toko, Kim Eun-Hee, Honda Yoshio, Takagi Hiroyuki, Tsukamoto Takehiko, Andoh Hiroya, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS Vol. 1399 2011

Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

Kawai Yohjiro, Chen Shang, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Kondo Hiroki, Hiramatsu Mineo, Kano Hiroyuki, Yamakawa Koji, Den Shoji, Hori Masaru

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates

Touko SUGIURA, Yoshio HONDA, Akihiro OKAMOTO, Hiroyuki TAKAGI, Takehiko TSUKAMOTO, Hiroya ANDOH

Journal of National Institute of Technology, Toyota College Vol. 42 ( 0 ) page： 19 - 22 2010

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：National Institute of Technology, Toyota College

We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.

DOI： 10.20692/toyotakosenkiyo.kj00005889042

CiNii Research

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. 54 ( 6 ) page： 2363 - 2366 2009.6

Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

Sawaki Nobuhiko, Hikosaka Toshiki, Koide Norikatsu, Tanaka Shigeyasu, Honda Yoshio, Yamaguchi Masahito

JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 10 ) page： 2867 - 2874 2009.5

Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 10 ) page： 2914 - 2918 2009.5

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Papers - HONDA, Yoshio