Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

Division display 481 - 500 of about 594 ／ All the affair displays >>

Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, N. Sawaki

J. Electron Microsc. Vol. 56 ( 4 ) page： 141-144 2007

Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 Vol. 4 ( 7 ) page： 2240 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). The structure is grown on a n-GaN templated (0001) sapphire substrate. The SAG-double heterostructure (DH) is consisted of a Te-doped AlGaN cladding layer, an InGaN active layer, a Mg-doped AlGaN cladding layer, and a Mg-doped GaN capping layer. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 400 nm with a full width at half-maximum (FWHM) of approximately 0.38 eV (at 20 mA). We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitride LEDs. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200674799

Web of Science

Characterization of AlGaN, Te-doped GaN and mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 Vol. 4 ( 1 ) page： 133 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The AlxGa1-xN, Te-doped GaN and Mg-doped GaN layers on GaN/A1(2)O(3) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group Ill source material to get the AlxGa1-xN layers. The values of the compositions x of the AI(x)Ga(1-x)N layers characterized by X-ray diffraction (XRD) measurements are 0.6 % similar to 80 % at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n-type (or p-type) doping. The electron concentrations of the Te-doped GaN layers are varied from 1.8 X 10(17) to 8.3 x 10(18)/cm(3). The hole concentrations of the Mg-doped GaN layers are varied from 1.5 x 10(16) to 3.2 x 10(16)/cm(3). We find that the mixed-source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te-doped GaN layer with a high n-type concentration and a Mg-doped GaN layer with p-type concentration.

DOI： 10.1002/pssc.200673506

Web of Science

Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

S. Tanaka, A. Naito, Y. Honda, N. Sawaki, M. Ichihashi

J. Electron Microsc. Vol. 56 ( 2 ) page： 37-42 2007

Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

J. Appl. Phys. Vol. 101 ( 10 ) page： 103513-1-103513-5 2007

Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 Vol. 4 ( 1 ) page： 29 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to obtain the SAG-AlGaN/InGaN/AlGaN heterostructure, a special graphite fixture to use in HVPE is designed. First, an n-type AlGaN layer is grown at 1090 degrees C on a GaN templated (0001) sapphire substrate with a patterned SAG-structure of a silicon oxide (SiO2). On this selectively grown n-type AlGaNT layer, a nominally undoped-InGaN layer is grown using an In-Ga mixed metallic source at 990 degrees C. After the growth of InGaN layer, Mg-doped AlGaN and Mg-doped GaN layers are grown as a cladding and capping layers at 1090 degrees C and 1050 degrees C, respectively. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 415 nm with a full width at half-maximum (FWHM) of approximately 0.37 eV. We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of Ill-nitride LEDs. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200673508

Web of Science

Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 298 page： 207-210 2007

Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 Vol. 4 ( 1 ) page： 125 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The InGaN layers on GaN templated sapphire (000 1) and Si (I 11) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. As a new attempt in obtaining an InGaN layers, the growth of the thick InGaN layer is performed by putting small amount of Ga into the In source. The InGaN layer is compounded from chemical reaction between a NH3 and an Indium-gallium chloride formed by HCI flown over metallic In mixed with Ga. The InGaN layer is analyzed by X-ray photoelectron spectroscopy (XPS) to characterize the InGaN ternary crystal alloy. The optical property of the selective area growth (SAG) of the InGaN layer is investigated by the photoluminescence (PL) spectrum and the cathodoluminescence (CL) images. Indium compositions are estimated to be in the range 3-10 %. In order to obtain the GaN layer on GaN ternplated Si (111) substrates, an InGaN layer is used as an intermediate layer. The PL and CL of the InGaN intermediate layer are measured at 300K. We find that the InGaN intermediate layer is possible to be one of the growth methods of thick GaN layer on Si substrates by HVPE method.

DOI： 10.1002/pssc.200673507

Web of Science

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1461?1465 2006

Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 10A ) page： 7655-7660 2006

Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 5A ) page： 4015?4017 2006

Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1425?1428 2006

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1915?1918 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 - 1668 2006

Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 5A ) page： 4015?4017 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 ( 6 ) page： 1425 - 1428 2006

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

Using a selective metal organic vapour phase epitaxy method, (1-101)GaN was grown on a (001)Si substrate. Intentional carbon doping was attempted using CCl4 as the souce gas and the electrical properties were studied as a function of the doping level. All samples showed the p-type conduction. The hole concentration was increased by the doping, determined by the ratio of the carbon source and NH3 flow rates. The results indecated that the p-type conduction is due to the incorporation of carbon in the (1-101)GaN. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200565305

Web of Science

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 3 ( 6 ) page： 1915 - 1918 2006

Language：English Publishing type：Research paper (international conference proceedings)

An InGaN alloy co-doped with Zn and Si was grown by metal organic vapor phase epitaxy on a GaN templated silicon substrate and the luminesence (CL) properties are studied by cathodoluminescence spectroscopy. As the result of co-doping of Zn and Si, the CL intensity was extremely enhanced
enhancement in the peak intensity as well as the full-width at half maximum. The optimum doping density was estimated to be N(Zn) = 4.0 × 1019/cm3 and N(Si) = 8.0 × 1018/cm3. © 2006 WILEY-VCH Verlag GmbH &amp
Co. KGaA.

DOI： 10.1002/pssc.200565326

Scopus

Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 10A ) page： 7655-7660 2006

　 PREV - NEXT 　

<HONDA, Yoshio>

Papers - HONDA, Yoshio