Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Characterization of GaN layers grown on polycrystalline AlN substrates by hydride vapor phase epitaxy Open Access

Honda, A; Kwon, EM; Kim, KH; Lee, JH; Honda, Y; Kato, T; Park, JS; Ahn, HS

JOURNAL OF CRYSTAL GROWTH Vol. 680 2026.4

Red-emitting μLEDs based on graded-indium InGaN nanoplatelets

Han, QY; Cai, WT; Wang, J; Furusawa, Y; Wang, HT; Li, XG; Cheong, H; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 65 ( 2 ) 2026.1

Wavelength-tailored and dislocation-free InGaN nanoplatelets as pseudo-substrates fabricated by selective etching and regrowth

Han, QY; Cai, WT; Wang, J; Itoh, Y; Furusawa, Y; Wang, HT; Cheong, HJ; Pristovsek, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 65 ( 2 ) 2026.1

Study of beryllium acceptor states in aluminum nitride via cathodoluminescence analysis Open Access

Lin, YY; Wang, J; Cai, WT; Wang, HT; Kushimoto, M; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS Vol. 128 ( 3 ) 2026.1

Comparative study of quantum efficiency for InGaN photocathodes using various alkali metals Open Access

Idei, M; Koizumi, A; Sato, D; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 44 ( 1 ) 2026.1

Electrical characterization and optical deep-level transient spectroscopy of autodoped GaN:C with various carbon concentrations Open Access

Honda, A; Inayoshi, M; Taoka, N; Takeuchi, W; Watanabe, H; Kato, T; Honda, Y

JOURNAL OF APPLIED PHYSICS Vol. 138 ( 23 ) 2025.12

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films Open Access

Fregolent, M; Singh, S; Lu, S; Watanabe, H; Wang, J; De Santi, C; Meneghesso, G; Zanoni, E; Meneghini, M; Honda, Y; Amano, H; Sarkar, B

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 12 ) 2025.12

All-GaN-Based Monolithic MIS-HEMT Integrated Micro-LED Pixels for Active-Matrix Displays Open Access

Furusawa, Y; Cai, WT; Cheong, HJ; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 222 ( 23 ) 2025.12

On-State Current Increasing Structure of Source-Connected Polarization Superjunction Transistor Open Access

Kokubo, E; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 222 ( 23 ) 2025.12

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001) Open Access

Yang, X; Pristovsek, M; Nitta, S; Honda, Y; Ohtake, A; Sakuma, Y; Hiroto, T; Ishida, T; Ikezawa, M; Guo, QX; Amano, H

ADVANCED SCIENCE Vol. 12 ( 46 ) page： e09354 2025.12

Electron Spin Resonance and Photoluminescence Studies of Carbon-Induced Point Defects in GaN: Influence of Doping Concentration and Method Open Access

Honda, A; Watanabe, H; Kato, T; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 262 ( 12 ) 2025.12

Characterization of Quaternary AlxGa1-(x+y)InyN (x ≈ 0.5 and y ≤ 0.12) Metalorganic Vapor Phase Epitaxy Growth Focusing on Unintentionally Incorporated Impurities Open Access

Yamada, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 262 ( 12 ) 2025.12

On barrier-free vertical GaN PN junction diode enabled by ion-implantation and ex-situ Mg diffusion process Open Access

Singh, S; Kwon, W; Li, XG; Wang, J; Watanabe, H; Honda, Y; Amano, H; Sarkar, B

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 9 ) 2025.9

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics Open Access

Kobayashi, A; Maeda, T; Akiyama, T; Kawamura, T; Honda, Y

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 222 ( 17 ) 2025.9

Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

Idei, M; Sato, D; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 43 ( 3 ) 2025.5

Vertical GaN p-n diode with deeply etched mesas by contactless photo-electrochemical etching Open Access

Toyoda, H; Kwon, W; Watanabe, H; Tsukamoto, R; Furusawa, Y; Itoh, Y; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 18 ( 3 ) 2025.3

Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment

Kwon, W; Itoh, Y; Tanaka, A; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 18 ( 1 ) 2025.1

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Wang, J; Cai, WT; Lu, WF; Lu, S; Kano, E; Agulto, VC; Sarkar, B; Watanabe, H; Ikarashi, N; Iwamoto, T; Nakajima, M; Honda, Y; Amano, H

NATURE Vol. 631 ( 8019 ) page： 67 - + 2024.7

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping Reviewed

Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H

IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 71 ( 5 ) page： 3396 - 3402 2024.5

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy Reviewed

Honda, A; Watanabe, H; Takeuchi, W; Honda, Y; Amano, H; Kato, T

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4

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Papers - HONDA, Yoshio