Papers - HONDA, Yoshio
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Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed
K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano
phys. stat. sol. (c) Vol. 10 ( 3 ) page： 369-372 2013.3
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Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed
Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 5R ) page： 50001 2013
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Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed
Yamada, Takaya; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB16 2013
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Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed
Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC05 2013
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Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed
Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE06 2013
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Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed
Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC04 2013
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Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed
Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;
Thin Solid Films Vol. 546 page： 108-113 2013
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Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed
Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;
SPIE OPTO page： 86250K-86250K-6 2013
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High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed
Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JK09 2013
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Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed
Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB09 2013
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Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed
Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB11 2013
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GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed
Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE07 2013
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Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed
Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Journal of Applied Physics Vol. 114 ( 15 ) page： 153506 2013
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GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed
Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB03 2013
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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed
Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB14 2013
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Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed
Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 Vol. 10 ( 3 ) page： 369 - 372 2013
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Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed
Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB11 2013
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Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed
Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE06 2013
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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed
Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB14 2013
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Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 5R ) page： 50001 - 050001-10 2013