Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Fabrication of GaN dots array on Si substrate by selective area growth method Reviewed

YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 100 ( 643 ) page： 25 - 30 2001.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots.

Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 40 ( 3B ) page： 1896-1898 2001

Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino

Appl. Phys. Lett Vol. 79 ( 7 ) page： 955-957 2001

Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 230 ( 3-4 ) page： 346-350 2001

Fabrication of GaN micro-structures on (111) Si by selective area growth by MOVPE Reviewed

HONDA Y., OHTAKE Y., KAWAGUCHI Y., YAMAGUCHI M., SAWAKI N.

IEICE technical report. Electron devices Vol. 99 ( 616 ) page： 21 - 28 2000.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.

Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, and N. Sawaki

IPAP Conf. Series Vol. 1 page： 304-307 2000

Selective growth of GaN microstructures on (111) facets of a (001) Si substrate by MOVPE Reviewed

Y Honda, Y Kawaguchi, T Kato, M Yamaguchi, N Sawaki

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS Vol. 1 page： 302 - 307 2000

Language：English Publishing type：Research paper (international conference proceedings) Publisher：INST PURE APPLIED PHYSICS

The selective growth of wurtzite GaN was performed by MOVPE on (111) facets on a patterned (001) silicon substrate, which were fabricated by anisotropic etching with KOH solution using an SiO2 mask. The c-axis of the GaN was along the (111) axis of silicon and the shape of the crystal was a stripe having triangular cross-section. It was found the growth along < 000 (1) over bar > was not prominent and the growth rate was lower than that for the (1 (1) over bar 01) facet. As the result, lateral overgrowth on the SiO2 mask was substantially refrained. By a surface treatment with nitric acid, the growth of polycrystalline on bare (001) surface was completely suppressed keeping the growth on adjacent (111) facets.

Web of Science

Selective growth of cubic GaN on patterned GaAs(100) substrates by metalorganic vapor phase epitaxy Reviewed

Jun Wu, M. Kudo, A. Nagayama, H. Yaguchi, K. Onabe, Y. Shiraki

Physica Status Solidi (A) Applied Research Vol. 176 ( 1 ) page： 557 - 560 1999.11

Language：English Publishing type：Research paper (scientific journal)

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the samples, regardless of the different growth time. Both X-ray diffraction and photoluminescence measurements showed that the hexagonal phase GaN was considerably incorporated in the cubic GaN layer, indicating that the hexagonal GaN is easily constructed along the (111)B facet. In contrast, window stripes opening along [01-1] direction resulted in the formation of (311)A facets and subsequently a relatively flat surface occurred as the growth proceeded. Strong emission peaks of cubic GaN were observed in the photoluminescence spectra.

DOI： 10.1002/(SICI)1521-396X(199911)176:1<557::AID-PSSA557>3.0.CO;2-2

Scopus

Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves Reviewed

Y Honda, Y Iyechika, T Maeda, H Miyake, K Hiramatsu, H Sone, N Sawaki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 38 ( 11B ) page： L1299 - L1302 1999.11

Language：English Publishing type：Research paper (scientific journal) Publisher：JAPAN J APPLIED PHYSICS

Fluctuation of the crystal orientation of epitaxial-lateral-overgrown (ELO) GaN with a tungsten (W) mask is compared to that with a SiO2 mask by means of selected-area transmission electron diffraction (TED) and X-ray rocking curves (XRCs). XRCs of (0004) reflection exhibited three peaks for ELO-GaN on a SiO2 mask, and were confirmed to originate from domains of different c-axis orientation by TED. On the other hand, fluctuation of the c-axis was not observed for ELO-GaN with a W mask. These results indicate that the crystalline quality of ELO-GaN with a W mask is better than that with a SiO2 mask.

Web of Science

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, and K. Hiramatsu

Phys. Stat. Sol. (a) Vol. 176 page： 553-556 1999

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 162 page： 687-692 1999

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

Y Kawaguchi, Y Honda, M Yamaguchi, K Hiramatsu, N Sawaki

COMPOUND SEMICONDUCTORS 1998 Vol. 162 ( 162 ) page： 687 - 692 1999

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Selective area growth (SAG) of GaN on a (111) Si substrate using AlGaN as an intermediate layer by Metalorganic Vapor Phase Epitaxy (MOVPE) was studied. By optimizing the growth conditions, truncated hexagonal pyramids of GaN were obtained, and GaN polycrystals could not be observed on SiO2 masks. Cathodoluminescence (CL) spectra at 148 K showed that the near-band-edge emission peak shifts towards low energy side in comparison with that of a GaN layer grown on a (0001) sapphire substrate. This suggests that the tensile strain due to the heteroepitaxy is given in the GaN pyramid on the Si substrate in contrast to the compressive strain of the GaN layer on the sapphire substrate.

Web of Science

Selective area growth of GaN on Si substrate using SiO2 mask by metalorganic vapor phase epitaxy Reviewed

Y Kawaguchi, Y Honda, H Matsushima, M Yamaguchi, K Hiramatsu, N Sawaki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 37 ( 8B ) page： L966 - L969 1998.8

Language：English Publishing type：Research paper (scientific journal) Publisher：JAPAN J APPLIED PHYSICS

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 mu m or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the < 1120 > axis of hexagonal GaN is parallel to the < 110 > axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission hand for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

Web of Science

Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 37 ( 8B ) page： L966-L969 1998

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Papers - HONDA, Yoshio