Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers Reviewed

Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps Reviewed

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

APPLIED PHYSICS EXPRESS Vol. 12 ( 6 ) 2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019) Reviewed

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13 - 13 2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Reviewed

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 78 - 83 2019.4

Language：English Publishing type：Research paper (scientific journal)

This study examines the effect of (0 0 0 −1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6 × 10 15 cm −3 carbon, 6 × 10 15 cm −3 silicon, and 4 × 10 17 cm −3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5 μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1 1 −2 0] direction (or perpendicular to the [1 −1 0 0] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.

DOI： 10.1016/j.jcrysgro.2019.02.013

Web of Science

Scopus

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Reviewed

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

Jpn. J. Appl. Phys. Vol. 58 ( 4 ) 2019.3

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Reviewed

Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50 - 53 2019.3

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.

DOI： 10.1016/j.jcrysgro.2018.12.007

Web of Science

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics Reviewed

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS Vol. 12 ( 5 ) 2019.3

The annealing effect for the N2-exposed surface of the semiconductor photocathode

Sato Daiki, NIshitani Tomohiro, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2019.1 page： 1474 - 1474 2019.2

Morphological study of InGaN on GaN substrate by supersaturation Reviewed

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58 - 65 2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Reviewed

Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 205 - 208 2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Reviewed

Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

DOI： 10.7567/1882-0786/aafdb9

Web of Science

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps Reviewed

Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

APPLIED PHYSICS LETTERS Vol. 114 ( 1 ) 2019.1

Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography Reviewed

Nakano Kiyotaka, Honda Yoshio, Amano Hiroshi, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi

Materia Japan Vol. 58 ( 2 ) page： 103-103 - 103 2019

Electronic structure analysis of core structures of threading dislocations in GaN Reviewed

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

2019 Compound Semiconductor Week, CSW 2019 - Proceedings page： . 2019

Language：English Publishing type：Research paper (international conference proceedings)

© 2019 IEEE. It is known that threading dislocations degrade the performance of GaN-based electronic devices. Electronic structure of threading dislocations in GaN is not fully understood. Accordingly, we examine the electronic structures of threading dislocations in GaN using first principles calculations based on density functional theory (DFT) and to clarify the origin of the leakage current. We have comprehensively studied the relation between threading core structures and electronic property in GaN thin films. Our calculation models of threading dislocations are the edge dislocations with Burgers vectors of 1/3 [11-20] and the screw dislocations with Burgers vectors of [0001]. We examined various core types of the threading dislocations. We found that both edge dislocations and screw dislocations do not cause the leakage currents in n-type GaN based devices because no defect level appears near the conduction band bottom.

DOI： 10.1109/iciprm.2019.8819270

Web of Science

Scopus

Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method Reviewed

Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 36 ( 6 ) 2018.11

Language：English Publishing type：Research paper (scientific journal) Publisher：A V S AMER INST PHYSICS

A III-V semiconductor with a few monolayers of alkali metals (e.g., Cs) forms a negative electron affinity (NEA) surface, for which the vacuum level lies below the conduction band minimum of the base semiconductor. The photocathodes that form an NEA surface (NEA photocathodes) have various advantages, such as low emittance, a large current, high spin polarization, and ultrashort pulsed operation. The NEA-InGaN photocathode, which is sensitive to blue light, has been studied as a material for the next-generation robust photocathode. However, the proper conditions for forming NEA surfaces remain unknown. The authors consider whether the suitable process for NEA surfaces can be understood by investigating the relationship between the electron emission and the adsorption state of alkali metals. In this study, the relationship between the electron emission and the adsorption state of Cs on the p-type InGaN (0001) was analyzed by the temperature programed desorption (TPD) method using a quadrupole mass spectrometer. From the results of the TPD measurements, it was shown that there were several adsorption states of Cs on InGaN. The quantum efficiency (QE), which indicates the ratio of emitted electrons to incident photons, increased while Cs desorption occurred. The authors divided the formation process of an NEA surface into several sections to investigate the adsorption states of Cs related to the electron emission and to discuss the reasons why the QE increased despite the desorbed Cs. From the results of the NEA activation in each section, it was shown that there were sections where the QE increased by reacting with O-2 after Cs supply stopped. There is a possibility that several layers reacting with O-2 and those not reacting with O-2 are formed by performing NEA activation until the QE saturates. From the results of the TPD measurements in each section, it was suggested that there was a Cs peak at above 700 degrees C when the TPD method was carried out immediately after confirming the electron emission. Therefore, the adsorption state of Cs that formed a peak at above 700 degrees C had a close relation to the electron emission. It is considered that the increase of the QE in the TPD was affected by adsorbed Cs compounds that reacted with O-2. Although the mechanism is not understood, it is known that the QE was increased by the reaction of Cs adsorbed compounds and O-2 in previous studies. It was suspected that layers that reacted with O-2 appeared from TPD and then the QE increased by reacting with O-2. Published by the AVS.

DOI： 10.1116/1.5048061

Web of Science

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy Reviewed

Vol. 57 ( 10 ) 2018.10

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Reviewed

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH Vol. 498 page： 377 - 380 2018.9

The annealing effect for the air-exposed surface on the GaN semiconductor photocathode

Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2018.2 page： 1571 - 1571 2018.9

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition Reviewed

Vol. 57 ( 9 ) 2018.9

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy Reviewed

Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 12 ( 8 ) 2018.8

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Papers - HONDA, Yoshio