Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 102 ( 76 ) page： 27 - 31 2002.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 102 ( 80 ) page： 27 - 31 2002.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor- phase epitaxy Reviewed

KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Component parts and materials Vol. 102 ( 78 ) page： 15 - 19 2002.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 102 ( 76 ) page： 15 - 19 2002.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 102 ( 80 ) page： 15 - 19 2002.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Fabrication of GaN/AlGaN heterostructures on a (111)Si substrate by selective MOVPE Reviewed

T Kato, Y Honda, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 237 ( 2 ) page： 1099 - 1103 2002.4

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Growth of GaN/AlGaN heterostructure and quantum well (QW) on the (1 (1) over bar 0 1) side facets of truncated triangular GaN which is grown on a (1 1 1) silicon substrate is demonstrated for the first time. The cathode luminescence image showed that the composition of AlGaN is not uniform on the side facets, but the photoluminescence spectra exhibited clear peaks, which were attributed to the GaN QW embedded between AlGaN cladding layers. (C) 2002 Elsevier Science B.V. All rights reserved.

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Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki

APPLIED PHYSICS LETTERS Vol. 80 ( 2 ) page： 222 - 224 2002.1

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO2 grid mask pattern. Within window regions of (0.2-0.5) mmx(0.2-0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows. (C) 2002 American Institute of Physics.

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Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 242 ( 1-2 ) page： 82-86 2002

Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed

Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 242 ( 1-2 ) page： 77-81 2002

Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed

T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 237-239 ( 2 ) page： 1099-1103 2002

Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

Appl. Phys. Lett Vol. 80 ( 2 ) page： 222-224 2002

Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 170 page： 789-794 2002

Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, and T. Tanji

Jpn. J. Appl. Phys. Vol. 41 ( 7B ) page： L846-L848 2002

HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed

Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 1 ) page： 107-111 2002

Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate. Reviewed

Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, Iwasaki Ryuta, Sawaki Nobuhiko, Tanji Takayoshi

Japanese Journal of Applied Physics Vol. 41 ( 7 ) page： L846 - L848 2002

Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

T Kato, Y Honda, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2001 Vol. 170 ( 170 ) page： 789 - 794 2002

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

A GaN/AlGaN multiple quantum well (MQW) is fabricated on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE. The cathode luminescence (CL) and photoluminescence (PL) spectra exhibit subsidiary peak adjacent to the main peak due to GaN truncated triangular structure, which is attributed to the GaN/AlGaN MQW. The CL images indicate compositional non-uniformity of AlGaN cladding layer due to the different diffusion lengths of Al and Ga species on the surface.

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HVPE growth of GaN on a GaN templated (111) Si substrate Reviewed

Y Honda, T Ishikawa, Y Nishimura, M Yamaguchi, N Sawaki

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS Vol. 0 ( 1 ) page： 107 - 111 2002

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The hydride vapor phase epitaxial (HVPE) growth of GaN was attempted on a (111) Si substrate. In order to suppress the chemical reaction of the Si at high temperatures, the surface of the substrate was covered by a thin SiO2 film or GaN pyramids which were grown by selective metal-organic vapor phase epitaxy (MOVPE). The GaN pyramids served as the seeds for the following HVPE growth of GaN. Uniform layer of 12 mum thick wurtzite GaN was achieved successfully. The full width at half maximum (FWHM) of (0004) X-ray rocking curve was 450 arcsec. The cathode luminescence (CL) spectra at 4.2 K exhibited a strong band edge emission peak of which FWHM was as broad as 30.3 meV.

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Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates Reviewed

Y Honda, Y Kawaguchi, Y Ohtake, S Tanaka, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 230 ( 3-4 ) page： 346 - 350 2001.9

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Selective MOVPE growth of GaN microstructure on silicon substrates has been investigated using SiO2 mask having circular or stripe window. In case of (001)substrate, grooves with (1 1 1) facets at the sides were made by using the etching anisotropy of a KOH solution. On the (1 1 1) facets of patterned silicon substrate (or on the as opened window region of (1 1 1) substrate), growth of wurtzite GaN was performed, of which the c-axis is oriented along the (1 1 1) axis of silicon. The photoluminescence and X-ray diffraction analysis were performed to characterize the single crystal to reveal the effect of the growth conditions of the intermediated layer and the microstructure. (C) 2001 Elsevier Science B.V. All rights reserved.

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Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

S Tanaka, Y Honda, N Sawaki, M Hibino

APPLIED PHYSICS LETTERS Vol. 79 ( 7 ) page： 955 - 957 2001.8

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO2 stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe windows were nominally 1 and 2 mum, respectively. The average threading dislocation density for a completely coalesced 2-mum-thick GaN crystal obtained on the [11 (2) over tilde]-oriented stripe-patterned substrate was similar to 2x10(9) cm(-2). The reduction in threading dislocation density is a consequence of the lateral growth and dislocation reactions at the coalesced front of the mask. On the other hand, valleys and pits tend to remain on the mask during the growth on the [1 (1) over bar0]-oriented stripe-patterned substrate. Cracks were present in both crystals. (C) 2001 American Institute of Physics.

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Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

T Kato, Y Honda, Y Kawaguchi, M Yamaguchi, N Sawaki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 40 ( 3B ) page： 1896 - 1898 2001.3

Language：English Publishing type：Research paper (scientific journal) Publisher：INST PURE APPLIED PHYSICS

A GaN/AlGaN double heterostructure was fabricated on the (1 (1) over bar 01) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness, However. the Al composition of the AlGaN layer is dependent on the position on the (1 (1) over bar 01) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of At and Ga on the surface.

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Papers - HONDA, Yoshio