Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 105 ( 90 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

CiNii Research

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Component parts and materials Vol. 105 ( 92 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

CiNii Research

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

HS Ahn, KH Kim, M Yang, JY Yi, HJ Lee, JH Chang, HS Kim, SW Kim, SC Lee, Y Honda, M Yamaguchi, N Sawaki

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 202 ( 6 ) page： 1048 - 1052 2005.5

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

Using mixed-source hydride vapor-phase epitaxy (HVPE). an AlGaN layer with high Al content on GaN/Al2O3 substrate is obtained. The AlGaN layer grown by mixed-source HVPE is characterized by X-ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed-source HVPE technique, the AlGaN material is compounded from the chemical reaction between NH3 and an aluminum-gallium chloride formed using HCl that is flowed over metallic Ga mixed with Al. The XRD measurements indicate that single-crystal hexagonal AlGaN with high Al content had been grown. The CL spectra at 4 K show that the distribution of the Al on the AlGaN surface for very high Al content (x = 0.8 in AlxGa1-xN) is not uniform. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssa.200420001

Web of Science

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

HS Ahn, KH Kim, M Yang, JY Yi, HJ Lee, CR Cho, HK Cho, SW Kim, T Narita, Y Honda, M Yamaguchi, N Sawaki

APPLIED SURFACE SCIENCE Vol. 243 ( 1-4 ) page： 178 - 182 2005.4

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer. (c) 2004 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.apsusc.2004.09.117

Web of Science

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2125? 2128 2005

Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 284 ( 3-4 ) page： 341?346 2005

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (a) Vol. 202 ( 6 ) page： 1048?1052 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 361-364 2005

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 251-254 2005

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Surf. Science Vol. 243 ( 1-4 ) page： 178-182 2005

Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2349?2352 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Growth of AlGaN on Al2O3 substrates by mixed-source HVPE Reviewed

KH Kim, JY Yi, HJ Lee, M Yang, HS Ahn, CR Cho, SW Kim, Y Honda, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 361 - 364 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The mixed-source hydride vapor phase epitaxy (HVPE) growth of AlGaN layer is performed on Al2O3 substrate. The AlGaN layer is studied by X-ray diffraction (XRD) measurement, Auger electron spectroscopy (AES) analysis and cathodoluminesecence (CL) spectrum to characterize the structural and optical properties. The Al composition estimated by the XRD measurement is 30 %. The room temperature CL spectrum exhibits a weak peak at 323 nm.

Web of Science

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T Hikosaka, Y Honda, N Koide, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 251 - 254 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The electrical properties of a (1-101)GaN grown on an Si substrate were studied as a function of Si doping density. It was found that un-intentionally doped samples exhibited p-type conduction, while the doping of Si changed the type of conduction from p-type to n-type. The cathodeluminescence spectra at 4 K exhibited a strong edge emission peak at 357 nm followed by a defect-related emission at 370 nm. The intensity of the latter was enhanced by the Si doping and we found slight blue shift of the emission energy.

Web of Science

Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page： 2349 - 2352 2005

Language：English Publishing type：Research paper (international conference proceedings)

The growth of an InGaN / GaN double heterostructure (DH) was attempted on a stripe patterned GaN grown on a (111) Si substrate by selective area metal organic vapor phase epitaxy. The cathode luminescence (CL) spectroscopy at 4K suggests that we have an InGaN wire on the (0001) apex. Analysing the CL spectra, we found that the In composition is not uniform on the (1-101) facet, which was attributed to the diffusion of Ga on the facets. But the phenomenon depended on the TMIn (In source gas) flow rate and a uniform In composition was achieved under a certain flow rate. © 2005 WILEY-VCH Verlag GmbH &amp
Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200461558

Scopus

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, N. Sawaki

Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page： 2125 - 2128 2005

Language：English Publishing type：Research paper (international conference proceedings)

Uniform growth of thick GaN was attempted on an AlN templated (111) silicon substrate by hydride vapor phase epitaxy(HVPE). The results were very sensitive to the thickness of the AlN layer as well as the growth temperature. If the AlN is thinner than 50 nm, the surface of the silicon substrate was partly melted during the HVPE growth. If the AlN was thicker than 50 nm, the melting of the silicon surface was drastically suppressed. Uniform growth without degradation of the Si substrate was achieved at 1000°C with a thick AlN template layer. © 2005 WILEY-VCH Verlag GmbH &amp
Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200461575

Scopus

Doping of GaN, AlGaN by mixed-source HVPE Reviewed

JY Yi, KH Kim, HJ Lee, M Yang, HS Ahn, CR Cho, SW Kim, Y Honda, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 373 - 376 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Mg doped GaN and AlGaN layers were grown by hydrid vapor phase epitaxy (HVPE). Metallic Ga mixed with Mg and (Mg, Al) were used as group III source materials for the growth of GaN:Mg and AlGaN:Mg, respectively. For the crystalline and elemental analysis, double X-ray diffraction (DXRD) and Auger electron spectroscopy (AES) measurements were performed. A luminescence peak at around 380 nm which might be from Mg related recombination center Could be observed in cathodoluminescence (CL) spectroscopy. We could also observed, by Hall effect measurement, effect of counter doping by Mg acceptor in GaN:Mg and AlGaN:Mg layers.

Web of Science

Metalorganic-hydride vapor phase epitaxy growth of GaN/AlN on Si substrates

H. J. Lee, K. H. Kim, J. Y. Yi, M. Yang, H. S. Ahn, J. H. Chang, H. S. Kim, S. N. Yi, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Journal of the Korean Physical Society Vol. 45 page： S813 - S815 2004.12

Language：English Publishing type：Research paper (international conference proceedings)

High-quality GaN film with AlN buffer layer was successfully grown by using our newly designed metalorganic-hydride vapor-phase epitaxy (MO-HVPE) system. We performed the growth of AlN buffer layer on Si (111) substrates by the use of TMA and NH 3 at 935°C. GaN films were grown on AlN/Si (111) substrates by using metallic Ga, NH 3 and HCl as source materials at 1050&amp
C. The morphologies of the GaN and AlN buffer layers were characterized by scanning electron microscopy (SEM). For the optical characterization of the GaN/AlN/Si, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy were carried out at room temperature.

Scopus

Optical and electrical properties of (1-101)GaN grown on a 7 degrees off-axis (001)Si substrate Reviewed Open Access

T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki

APPLIED PHYSICS LETTERS Vol. 84 ( 23 ) page： 4717 - 4719 2004.6

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7degrees off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80-300 K (the hole carrier density 6.3x10(12) cm(-2) and hole mobility 278 cm(2)/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon. (C) 2004 American Institute of Physics.

DOI： 10.1063/1.1758300

Open Access

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Papers - HONDA, Yoshio