Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Doping of GaN, AlGaN by mixed-source HVPE Reviewed

JY Yi, KH Kim, HJ Lee, M Yang, HS Ahn, CR Cho, SW Kim, Y Honda, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 373 - 376 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Mg doped GaN and AlGaN layers were grown by hydrid vapor phase epitaxy (HVPE). Metallic Ga mixed with Mg and (Mg, Al) were used as group III source materials for the growth of GaN:Mg and AlGaN:Mg, respectively. For the crystalline and elemental analysis, double X-ray diffraction (DXRD) and Auger electron spectroscopy (AES) measurements were performed. A luminescence peak at around 380 nm which might be from Mg related recombination center Could be observed in cathodoluminescence (CL) spectroscopy. We could also observed, by Hall effect measurement, effect of counter doping by Mg acceptor in GaN:Mg and AlGaN:Mg layers.

Web of Science

Metalorganic-hydride vapor phase epitaxy growth of GaN/AlN on Si substrates

H. J. Lee, K. H. Kim, J. Y. Yi, M. Yang, H. S. Ahn, J. H. Chang, H. S. Kim, S. N. Yi, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Journal of the Korean Physical Society Vol. 45 page： S813 - S815 2004.12

Language：English Publishing type：Research paper (international conference proceedings)

High-quality GaN film with AlN buffer layer was successfully grown by using our newly designed metalorganic-hydride vapor-phase epitaxy (MO-HVPE) system. We performed the growth of AlN buffer layer on Si (111) substrates by the use of TMA and NH 3 at 935°C. GaN films were grown on AlN/Si (111) substrates by using metallic Ga, NH 3 and HCl as source materials at 1050&amp
C. The morphologies of the GaN and AlN buffer layers were characterized by scanning electron microscopy (SEM). For the optical characterization of the GaN/AlN/Si, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy were carried out at room temperature.

Scopus

Optical and electrical properties of (1-101)GaN grown on a 7 degrees off-axis (001)Si substrate Reviewed

T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki

APPLIED PHYSICS LETTERS Vol. 84 ( 23 ) page： 4717 - 4719 2004.6

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7degrees off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80-300 K (the hole carrier density 6.3x10(12) cm(-2) and hole mobility 278 cm(2)/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon. (C) 2004 American Institute of Physics.

DOI： 10.1063/1.1758300

Web of Science

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

Technical report of IEICE. SDM Vol. 104 ( 43 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

IEICE technical report. Component parts and materials Vol. 104 ( 41 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

IEICE technical report. Electron devices Vol. 104 ( 39 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Photocurrent spectroscopy of a (0001)GaN/AlGaN/(111)Si heterostructure Reviewed

Y Kuroiwa, Y Honda, N Sawaki

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 21 ( 2-4 ) page： 787 - 792 2004.3

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

A crack-free GaN/AlGaN sample was grown on (111) Si by selective area metal-organic vapor-phase epitaxy method using an AlGaN intermediate layer. The electrical properties of the GaN/AlGaN/Si heterojunction diode were investigated with photocurrent spectroscopy at 77 K. It was found that the current-voltage characteristics depend on the thickness/composition of the intermediate layer. The photocurrent spectra indicated that the energy band of the n-type-doped Si substrate is lifted at the heterointerface, while it is flat in case of the sample grown on a p-type-doped Si. The depletion of the energy band in the n-Si at the heterointerface is attributed to the diffusion of Al during the growth. (C) 2003 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.physe.2003.11.125

Web of Science

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

S Tanaka, Y Honda, N Kameshiro, R Iwasaki, N Sawaki, T Tanji, M Ichihashi

JOURNAL OF CRYSTAL GROWTH Vol. 260 ( 3-4 ) page： 360 - 365 2004.1

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

We have investigated the morphology of the high-temperature-grown AlN nucleation layer and its role in the early stage of GaN growth, by means of transmission electron microscopy. The nitride was selectively grown on a 7-degree off-oriented (001) patterned Si substrate by metalorganic vapor phase epitaxy. AlN was deposited on the inclined unmasked (111) facet in the form of islands. The size of the islands varied along the slope, which is attributable to the diffusion of the growth species in the vapor phase. The GaN nucleation occurred at the region where rounded AlN islands formed densely. The threading dislocations were observed to generate in the GaN nucleated region. (C) 2003 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.jscrysgro.2003.08.074

Web of Science

Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

Y. Kuroiwa, Y. Honda, N. Sawaki

Physica E Vol. 21 ( 2-4 ) page： 782-792 2004

Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Lett. Vol. 84 ( 23 ) page： 4717-4719 2004

Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

A. Nishioka, Y. Honda, and N. Sawaki

Proc. of Int. Conf. on Electrical Engineering 2004 Vol. 3-1 page： 297-300 2004

Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2512?2515 2004

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi

J. Cryst. Growth Vol. 260 ( 3-4 ) page： 360-365 2004

Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2474?2477 2004

Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

B Shen

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS Vol. 19 ( 4 ) page： 2297 - 2300 2004

Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE

Classical transport and the magneto-transport of the two-dimensional electron gas (2DEG) in modulation-doped AlxGa1-xN/GaN heterostructures have been investigated. In magnetotransport measurements at low temperatures and high magnetic fields, the strong Shubnikov-de Hass (SdH) oscillations with the double periodicity is clearly observed, indicating the 2DEG occupation of the double subbands in the triangular quantum well at the heterointerfaces. Based on the observation of the SdH oscillation with double periodicity, the sheet concentrations and the mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering (MIS) oscillations of the 2DEG, and the spin splitting of the 2DEG in the quantum well at the heterointerfaces have been studied and discussed.

Web of Science

Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

A. Nishioka, Y. Honda, N. Sawaki

Proc. of Int. Conf. on Electrical Engineering 2004 Vol. 3-1 page： 297-300 2004

Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1-101) GaN facet Reviewed

EH Kim, T Narita, Y Honda, N Sawaki

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS Vol. 1 ( 10 ) page： 2512 - 2515 2004

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

An InGaN/GaN MQW waveguide was fabricated on a (1-101) facet of MOVPE GaN on a 7 degree off oriented (001)Si substrate. Because of the low growth rate on the facet, we achieved uniform layers with less dislocation density and superior flatness. The optical gain of the stripe structure as a waveguide was analyzed at room temperature. It was found that the optical gain was as high as -20 cm(-1) at a low excitation intensity of 4 kNV/cm(2) even for the photoluminescence peak wavelength of the quantum well. The high optical gain demonstrate the high optical quality of the MQW grown on the facet structure.

DOI： 10.1002/pssc.200405039

Web of Science

Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

KH Kim, JY Yi, HJ Lee, M Yang, HS Ahn, CR Cho, SW Kim, SC Lee, Y Honda, M Yamaguchi, N Sawaki

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS Vol. 1 ( 10 ) page： 2474 - 2477 2004

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The growth of a thick AlGaN is performed on Al(2)O(3) substrate by metalorganic vapor phase epitaxyhydride vapor phase epitaxy (MOVPE-HVPE) combined system. Thin AIN or GaN layer is grown on a substrate by MOVPE growth method with the conventional manner but in a hot-wall chamber and followed by the HVPE growth of a thick AlGaN in the same chamber. For the growth of a AlGaN layer, NH(3) and aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al are used as aluminum-gallium and nitrogen sources. The peak of the cathodoluminescence (CL) spectrum of the thick AlGaN is shown at the wavelength of 354 nm. This suggests that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Wemheim.

DOI： 10.1002/pssc.200405020

Web of Science

Infrared reflectance in GaN/AlGaN triangular stripes grown on Si(111) substrates by MOVPE Reviewed

M Mizushima, T Kato, Y Honda, N Yamaguchi, N Sawaki

JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. 42 ( Supp. issue 2 ) page： S750 - S752 2003.2

Language：English Publishing type：Research paper (scientific journal) Publisher：KOREAN PHYSICAL SOC

Infrared reflectance spectroscopy was applied to the GaN/AlGaN triangular stripes grown on a Si(111) substrate by selective area metalorganic vapor phase epitay. Because of the triangular shape of tile GaN, which worked itself as a prism. we could detect the local vibration modes of Si-N. N-H-2, Si-H, and Si-O,bonds near the GaN/Si interface with high sensitivity.

Web of Science

Photoluminescence properties of a self-doped GaN layer grown on Si substrate Reviewed

KH Kim, H Kim, M Yang, HS Ahn, SN Yi, N Kameshiro, Y Honda, M Yamaguchi, N Sawaki

JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. 42 ( Supp. issue 2 ) page： S219 - S221 2003.2

Language：English Publishing type：Research paper (scientific journal) Publisher：KOREAN PHYSICAL SOC

Photoluminescence (PL) spectra of self-doped GaN were investigated at 77 K. The AlGaN/GaN heterostructure was selectively grown by metal-organic vapor phase epitaxy (MOVPE) on a (111) etched facet of 7 off Si (001) substrate, A peak was observed at 78.1 meV below the band edge peak at 77 K but disappeared at 300 K. The peak depends strongly on varying input power intensity. This peak might originate from the self-doped (SD) layer formed by diffusion of impurities front SiO2 and/or Si substrate.

Web of Science

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Papers - HONDA, Yoshio