Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1(1)over-bar01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y. -Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

APPLIED PHYSICS LETTERS Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 (1) over bar 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 (1) over bar0 (2) over bar] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3549561]

DOI： 10.1063/1.3549561

Web of Science

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Vol. 4 ( 1 ) page： 01210_1-012105_3 2011

Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. (C) 2010 Optical Society of America

Web of Science

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

GALLIUM NITRIDE MATERIALS AND DEVICES VI Vol. 7939 page： 79391X 2011

Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE-INT SOC OPTICAL ENGINEERING

We present a study of semi-polar (1 (1) over bar 01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

DOI： 10.1117/12.876656

Web of Science

IQE and EQE of the nitride-based UV/DUV LEDs Reviewed

H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2011

Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE

Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

Web of Science

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 7 ( 7-8 ) page： 1760–1763 2010.7

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Papers - HONDA, Yoshio