Papers - HONDA, Yoshio
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3 2011.1
-
Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Appl. Phys. Express Vol. 4 ( 1 ) page: 01210_1-012105_3 2011.1
-
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed
Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Appl. Phys. Lett. Vol. 98 ( 5 ) page: 051902_1-051902_3 2011.1
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3 2011.1
-
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed
Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Appl. Phys. Lett. Vol. 98 ( 5 ) page: 051902_1-051902_3 2011.1
-
Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Appl. Phys. Express Vol. 4 ( 1 ) page: 01210_1-012105_3 2011.1
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3 2011.1
-
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed
Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
Appl. Phys. Lett. Vol. 98 ( 5 ) page: 051902_1-051902_3 2011.1
-
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1(1)over-bar01) semipolar GaN Reviewed
Z. H. Wu, T. Tanikawa, T. Murase, Y. -Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
APPLIED PHYSICS LETTERS Vol. 98 ( 5 ) page: 051902_1-051902_3 2011.1
-
Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed
Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011
-
Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed
Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011
-
Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed
Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011
-
Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Vol. 4 ( 1 ) page: 01210_1-012105_3 2011
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed
Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki
GALLIUM NITRIDE MATERIALS AND DEVICES VI Vol. 7939 page: 79391X 2011
-
IQE and EQE of the nitride-based UV/DUV LEDs Reviewed
H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2011
-
Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed
B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 42 ( 10 ) page: 2575-2578 2010.10
-
Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed
B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Physica E Vol. 42 ( 10 ) page: 2575-2578 2010.10
-
Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed
B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Physica E Vol. 42 ( 10 ) page: 2575-2578 2010.10
-
Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed
B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Physica E Vol. 42 ( 10 ) page: 2575-2578 2010.10
-
HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed
T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 7 ( 7-8 ) page: 1760–1763 2010.7