Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure Reviewed

TANAKA Shigeyasu, NAITO Akiyuki, HONDA Yoshio, SAWAKI Nobuhiko, ICHIHASHI Mikio

Journal of electron microscopy Vol. 56 ( 2 ) page： 37 - 42 2007.4

Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

Tanaka Shigeyasu, Naito Akiyuki, Honda Yoshio, Sawaki Nobuhiko, Ichihashi Mikio

JOURNAL OF ELECTRON MICROSCOPY Vol. 56 ( 2 ) page： 37 - 42 2007.4

Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE Reviewed

Hikosaka Toshiki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF CRYSTAL GROWTH Vol. 298 page： 207 - 210 2007.1

Carbon incorporation on (1101) facet of AlGaN in metal organic vapor phase epitaxy Reviewed

Koide Norikatsu, Hikosaka Toshiki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 45 ( 10A ) page： 7655 - 7660 2006.10

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 243 ( 7 ) page： 1665 - 1668 2006.6

Series resistance in n-GaN/AIN/n-Si heterojunction structure Reviewed

Kondo Hiroyuki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 45 ( 5A ) page： 4015 - 4017 2006.5

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 105 ( 94 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

CiNii Research

[Congenital middle ear cholesteatoma: experience in 48 cases].

Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

Nihon Jibiinkoka Gakkai kaiho Vol. 106 ( 9 ) page： 856 - 65 2003.9

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy. Reviewed

Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

Japanese Journal of Applied Physics Vol. 40 ( 3B ) page： 1896 - 1898 2001

Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics

A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

DOI： 10.1143/jjap.40.1896

CiNii Research

Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy. Reviewed

Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetada, Yamaguchi Masahito, Hiramatsu Kazumasa, Sawaki Nobuhiko

Japanese Journal of Applied Physics Vol. 37 ( 8B ) page： L966 - L969 1998

Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

DOI： 10.1143/jjap.37.l966

CiNii Research

Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy Open Access

Kazuki Ohnishi, Kansuke Hamasaki, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 648 2024.12

Language：English Publishing type：Research paper (scientific journal)

Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl2 and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl2 and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 1019 cm−3 is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

DOI： 10.1016/j.jcrysgro.2024.127923

Open Access

Web of Science

Scopus

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide

Journal of Applied Physics Vol. 135 ( 18 ) 2024.5

Language：English Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified, and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission (τPLRT) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, τPLRT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm−3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively, while major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3–4, in ammonothermal GaN. The values of τPLRT in n-GaN samples are compared with those of p-GaN, in which τPLRT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers and by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealing, respectively.

DOI： 10.1063/5.0201931

Web of Science

Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy

Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 628 page： 127529 - 127529 2024.2

Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 628 page： 127552 - 127552 2024.2

Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

Shin Ito, Shin ichiro Sato, Michał S. Boćkowski, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Ken ichi Yoshida, Hideaki Minagawa, Naoto Hagura

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Vol. 547 2024.2

Language：English Publishing type：Research paper (scientific journal)

Lanthanide (Ln)-implanted gallium nitride (GaN) semiconductors have a variety of potential applications as light-emitting devices and quantum light sources, but their optical properties are not well understood. In this study, we investigate the room temperature optical properties of praseodymium (Pr) ion implanted single-crystal GaN and their changes upon ultrahigh pressure annealing (UHPA) up to 1480 °C. Photoluminescence (PL) spectra, luminescence transition lifetime, and excitation cross section of the implanted Pr ions are analyzed. In addition, the recovery of implantation-induced damage and the thermal diffusion of implanted Pr ions by UHPA are investigated by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The results show that the implantation damage is recovered by annealing at temperatures above 1200 °C, but Pr ions thermally diffuse to the surface as the annealing temperature increases. The annealing temperature at which a maximum PL intensity is obtained increases with increasing the implantation dose. However, the PL intensity decreases in all cases after annealing at 1480 °C, indicating that a quenching factor is dominant in this temperature range.

DOI： 10.1016/j.nimb.2023.165181

Web of Science

Scopus

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field Effect Transistors

Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Satoshi Kurai, Narihito Okada, Yoichi Yamada

physica status solidi (a) Vol. 220 ( 16 ) 2023.8

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic Reviewed

Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano

Applied Physics Letters Vol. 122 ( 14 ) 2023.4

Temperature field, flow field and temporal fluctuations thereof in ammonothermal growth of bulk GaN - transition from dissolution stage to growth stage conditions Reviewed Open Access

S. Schimmel, D. Tomida, T. Ishiguro, Y. Honda, S. F. Chichibu, H. Amano

Materials Vol. 16 ( 5 ) page： 2016 1 - 27 2023.3

Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates

Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

Japanese Journal of Applied Physics Vol. 62 ( 2 ) page： 020902 - 020902 2023.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

We demonstrated nanoplatelet In x Ga1−x N pseudosubstrates with In content varying from 0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in-plane strain, thus allowing for the use of a thick active layer to reduce built-in polarization. The 15 nm thick InGaN active layers grown under the same conditions on these nanoplatelets showed a remarkable cathodoluminescence redshift from 460 to 617 nm, suggesting enhanced In incorporation efficiency in InGaN nanoplatelets with higher In content. Moreover, the 617 nm-emitting sample presented an imperceptible blueshift under excitation-power-dependent photoluminescence, indicating a weak polarization field introduced by the high-In-content pseudosubstrates and the thick active layer.

DOI： 10.35848/1347-4065/acb74c

Web of Science

Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/acb74c/pdf

Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes

Tomohiro Nishitani, Yuta Arakawa, Shotaro Noda, Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, Yoshio Honda, Hiroshi Amano

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 40 ( 6 ) 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：A V S AMER INST PHYSICS

Pulsed electron beams from a photocathode using an InGaN semiconductor have brought selectively scanning technology to scanning electron microscopes, where the electron beam irradiation intensity and area can be arbitrarily selected within the field of view in SEM images. The p-type InGaN semiconductor crystals grown in the metalorganic chemical vapor deposition equipment were used as the photocathode material for the electron beam source after the surface was activated to a negative electron affinity state in the electron gun under ultrahigh vacuum. The InGaN semiconductor photocathode produced a pulsed electron beam with a rise and fall time of 3 ns, consistent with the time structure of the irradiated pulsed laser used for the optical excitation of electrons. The InGaN photocathode-based electron gun achieved a total beam operation time of 1300 h at 15 mu A beam current with a downtime rate of 4% and a current stability of 0.033% after 23 cycles of surface activation and continuous beam operation. The InGaN photocathode-based electron gun has been installed in the conventional scanning electron microscope by replacing the original field emission gun. SEM imaging was performed by selective electron beaming, in which the scanning signal of the SEM system was synchronized with the laser for photocathode excitation to irradiate arbitrary regions in the SEM image at arbitrary intensity. The accuracy of the selection of regions in the SEM image by the selective electron beam was pixel by pixel at the TV scan speed (80 ns/pix, 25 frame/s) of the SEM.

DOI： 10.1116/6.0002111

Web of Science

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Papers - HONDA, Yoshio