Papers - HONDA, Yoshio
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Deki, M; Kawarabayashi, H; Honda, Y; Amano, H
AIAA AVIATION 2023 FORUM 2023
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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars Reviewed Open Access
Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T
SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 21208 2022.12
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Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed Open Access
Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H
APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11
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Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS Vol. 121 ( 8 ) 2022.8
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Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. Reviewed Open Access
Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H
Scientific reports Vol. 12 ( 1 ) page： 8175 2022.5
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Laser slice thinning of GaN-on-GaN high electron mobility transistors Reviewed Open Access
Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H
SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 7363 2022.5
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Park, JH; Cai, W; Cheong, H; Ushida, Y; Lee, DH; Ando, Y; Furusawa, Y; Honda, Y; Lee, DS; Seong, TY; Amano, H
JOURNAL OF APPLIED PHYSICS Vol. 131 ( 15 ) 2022.4
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Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Reviewed Open Access
Liao, YQ; Chen, T; Wang, J; Cai, WT; Ando, YT; Yang, X; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H
APPLIED PHYSICS LETTERS Vol. 120 ( 12 ) 2022.3
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Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed Open Access
Wang Jia, Lu Shun, Cai Wentao, Kumabe Takeru, Ando Yuto, Liao Yaqiang, Honda Yoshio, Xie Ya-Hong, Amano Hiroshi
IEEE ELECTRON DEVICE LETTERS Vol. 43 ( 1 ) page： 150 - 153 2022.1
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An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources Reviewed Open Access
Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 10 page： 797 - 807 2022
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Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed
Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 68 ( 12 ) page： 6059 - 6064 2021.12
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Cyclotron production of <sup>225</sup>Ac from an electroplated <sup>226</sup>Ra target. Reviewed Open Access
Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR
European journal of nuclear medicine and molecular imaging Vol. 49 ( 1 ) page： 279 - 289 2021.12
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Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) Reviewed Open Access
Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS LETTERS Vol. 119 ( 20 ) 2021.11
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The difference of InGaN photocathode with photoemission characteristics Reviewed
Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Iijima Hokuto, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Meguro Takashi
JSAP Annual Meetings Extended Abstracts Vol. 2021.1 ( 0 ) page： 1347 - 1347 2021.2
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Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed Open Access
Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Honda Yoshio, Roy Sourajeet, Amano Hiroshi, Sarkar Biplab
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 9 page： 570 - 581 2021
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Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed International journal
Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 7 ) page： . 2020.7
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Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed International journal Open Access
Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 6 ) page： . 2020.6
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Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed Open Access
Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 539 page： . 2020.6
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Impact of high-temperature implantation of Mg ions into GaN Reviewed International journal Open Access
Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) page： . 2020.5
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Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4