Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

Division display 21 - 40 of about 594 ／ All the affair displays >>

Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

Deki, M; Kawarabayashi, H; Honda, Y; Amano, H

AIAA AVIATION 2023 FORUM 2023

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars Reviewed

Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 21208 2022.12

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy Reviewed

Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 8 ) 2022.8

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. Reviewed

Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

Scientific reports Vol. 12 ( 1 ) page： 8175 2022.5

Laser slice thinning of GaN-on-GaN high electron mobility transistors Reviewed

Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

SCIENTIFIC REPORTS Vol. 12 ( 1 ) page： 7363 2022.5

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer Reviewed

Park, JH; Cai, W; Cheong, H; Ushida, Y; Lee, DH; Ando, Y; Furusawa, Y; Honda, Y; Lee, DS; Seong, TY; Amano, H

JOURNAL OF APPLIED PHYSICS Vol. 131 ( 15 ) 2022.4

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Reviewed

Liao, YQ; Chen, T; Wang, J; Cai, WT; Ando, YT; Yang, X; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 120 ( 12 ) 2022.3

Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed

Wang Jia, Lu Shun, Cai Wentao, Kumabe Takeru, Ando Yuto, Liao Yaqiang, Honda Yoshio, Xie Ya-Hong, Amano Hiroshi

IEEE ELECTRON DEVICE LETTERS Vol. 43 ( 1 ) page： 150 - 153 2022.1

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources Reviewed

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 10 page： 797 - 807 2022

Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 68 ( 12 ) page： 6059 - 6064 2021.12

Cyclotron production of <sup>225</sup>Ac from an electroplated <sup>226</sup>Ra target. Reviewed

Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR

European journal of nuclear medicine and molecular imaging Vol. 49 ( 1 ) page： 279 - 289 2021.12

Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) Reviewed

Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 119 ( 20 ) 2021.11

The difference of InGaN photocathode with photoemission characteristics Reviewed

Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Iijima Hokuto, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Meguro Takashi

JSAP Annual Meetings Extended Abstracts Vol. 2021.1 ( 0 ) page： 1347 - 1347 2021.2

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Honda Yoshio, Roy Sourajeet, Amano Hiroshi, Sarkar Biplab

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 9 page： 570 - 581 2021

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed International journal

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 7 ) page： . 2020.7

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed International journal

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 6 ) page： . 2020.6

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 539 page： . 2020.6

Impact of high-temperature implantation of Mg ions into GaN Reviewed International journal

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) page： . 2020.5

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature Reviewed

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

　 PREV - NEXT 　

<HONDA, Yoshio>

Papers - HONDA, Yoshio