Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 Vol. 4 ( 7 ) page： 2240 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). The structure is grown on a n-GaN templated (0001) sapphire substrate. The SAG-double heterostructure (DH) is consisted of a Te-doped AlGaN cladding layer, an InGaN active layer, a Mg-doped AlGaN cladding layer, and a Mg-doped GaN capping layer. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 400 nm with a full width at half-maximum (FWHM) of approximately 0.38 eV (at 20 mA). We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitride LEDs. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200674799

Web of Science

Characterization of AlGaN, Te-doped GaN and mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 Vol. 4 ( 1 ) page： 133 - + 2007

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-V C H VERLAG GMBH

The AlxGa1-xN, Te-doped GaN and Mg-doped GaN layers on GaN/A1(2)O(3) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group Ill source material to get the AlxGa1-xN layers. The values of the compositions x of the AI(x)Ga(1-x)N layers characterized by X-ray diffraction (XRD) measurements are 0.6 % similar to 80 % at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n-type (or p-type) doping. The electron concentrations of the Te-doped GaN layers are varied from 1.8 X 10(17) to 8.3 x 10(18)/cm(3). The hole concentrations of the Mg-doped GaN layers are varied from 1.5 x 10(16) to 3.2 x 10(16)/cm(3). We find that the mixed-source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te-doped GaN layer with a high n-type concentration and a Mg-doped GaN layer with p-type concentration.

DOI： 10.1002/pssc.200673506

Web of Science

Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

S. Tanaka, A. Naito, Y. Honda, N. Sawaki, M. Ichihashi

J. Electron Microsc. Vol. 56 ( 2 ) page： 37-42 2007

Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

J. Appl. Phys. Vol. 101 ( 10 ) page： 103513-1-103513-5 2007

Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 298 page： 207-210 2007

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1461?1465 2006

Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 10A ) page： 7655-7660 2006

Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 5A ) page： 4015?4017 2006

Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1425?1428 2006

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed Open Access

Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1915?1918 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 - 1668 2006

Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 ( 6 ) page： 1425 - 1428 2006

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

Using a selective metal organic vapour phase epitaxy method, (1-101)GaN was grown on a (001)Si substrate. Intentional carbon doping was attempted using CCl4 as the souce gas and the electrical properties were studied as a function of the doping level. All samples showed the p-type conduction. The hole concentration was increased by the doping, determined by the ratio of the carbon source and NH3 flow rates. The results indecated that the p-type conduction is due to the incorporation of carbon in the (1-101)GaN. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200565305

Web of Science

Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 5A ) page： 4015?4017 2006

Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 10A ) page： 7655-7660 2006

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 ( 6 ) page： 1461 - 1465 2006

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

The AlxGa1-xN layers on GaN/Al2O3 substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1-xN layers. Te doping as a new attempt and Si doping in obtaining an n-type Al-GaN layers are performed by putting small amount of Te (or Si) into the Ga-Al source, respectively. In case of Te-doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 10(18) to 8.0 x 10(18)/cm(3), while in case of Si-doped one, it is varied from 2.0 x 10(16) to 1.1 x 10(17)/cm(3). We find the new results that Te doping is more suitable to get a high n-type concentration by mixed-source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)-Te-doped AlGaN and SAG-Si-doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG-LEDs of two different cladding layers. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200565306

Web of Science

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed Open Access

Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 3 ( 6 ) page： 1915 - 1918 2006

Language：English Publishing type：Research paper (international conference proceedings)

An InGaN alloy co-doped with Zn and Si was grown by metal organic vapor phase epitaxy on a GaN templated silicon substrate and the luminesence (CL) properties are studied by cathodoluminescence spectroscopy. As the result of co-doping of Zn and Si, the CL intensity was extremely enhanced
enhancement in the peak intensity as well as the full-width at half maximum. The optimum doping density was estimated to be N(Zn) = 4.0 × 1019/cm3 and N(Si) = 8.0 × 1018/cm3. © 2006 WILEY-VCH Verlag GmbH &amp
Co. KGaA.

DOI： 10.1002/pssc.200565326

Scopus

Incorporation of carbon on a (1(1)over-bar01) facet of GaN by MOVPE Reviewed

N Koide, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 284 ( 3-4 ) page： 341 - 346 2005.11

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

The incorporation of carbon Using CCl4 or C2H2 in metal-organic vapor phase epitaxy is Studied oil (1 1 0 1) facets of a GaN stripe formed by selective area growth. The optical spectra of the sample were examined by cathode luminescence spectroscopy (CL). An edge emission peak specific to the (1 1 0 1) facet was tentatively assigned to the acceptor bound exciton (ABE). The peak intensity was enhanced by the increase of the carbon doping and determined by the ratio of the carbon source and the NH3 flow rate. The CL image showed that the doping had been achieved uniformly oil the (1 1 0 1) facets but affected by the stress/strain due to the large lattice mismatch against the Si substrate. (c) 2005 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.jcrysgro.2005.07.021

Web of Science

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Papers - HONDA, Yoshio