Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 ( 6 ) page： 1461 - 1465 2006

Language：English Publishing type：Research paper (international conference proceedings) Publisher：WILEY-VCH, INC

The AlxGa1-xN layers on GaN/Al2O3 substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1-xN layers. Te doping as a new attempt and Si doping in obtaining an n-type Al-GaN layers are performed by putting small amount of Te (or Si) into the Ga-Al source, respectively. In case of Te-doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 10(18) to 8.0 x 10(18)/cm(3), while in case of Si-doped one, it is varied from 2.0 x 10(16) to 1.1 x 10(17)/cm(3). We find the new results that Te doping is more suitable to get a high n-type concentration by mixed-source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)-Te-doped AlGaN and SAG-Si-doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG-LEDs of two different cladding layers. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200565306

Web of Science

Incorporation of carbon on a (1(1)over-bar01) facet of GaN by MOVPE Reviewed

N Koide, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki

JOURNAL OF CRYSTAL GROWTH Vol. 284 ( 3-4 ) page： 341 - 346 2005.11

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

The incorporation of carbon Using CCl4 or C2H2 in metal-organic vapor phase epitaxy is Studied oil (1 1 0 1) facets of a GaN stripe formed by selective area growth. The optical spectra of the sample were examined by cathode luminescence spectroscopy (CL). An edge emission peak specific to the (1 1 0 1) facet was tentatively assigned to the acceptor bound exciton (ABE). The peak intensity was enhanced by the increase of the carbon doping and determined by the ratio of the carbon source and the NH3 flow rate. The CL image showed that the doping had been achieved uniformly oil the (1 1 0 1) facets but affected by the stress/strain due to the large lattice mismatch against the Si substrate. (c) 2005 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.jcrysgro.2005.07.021

Web of Science

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 105 ( 90 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Component parts and materials Vol. 105 ( 92 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

HS Ahn, KH Kim, M Yang, JY Yi, HJ Lee, JH Chang, HS Kim, SW Kim, SC Lee, Y Honda, M Yamaguchi, N Sawaki

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 202 ( 6 ) page： 1048 - 1052 2005.5

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

Using mixed-source hydride vapor-phase epitaxy (HVPE). an AlGaN layer with high Al content on GaN/Al2O3 substrate is obtained. The AlGaN layer grown by mixed-source HVPE is characterized by X-ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed-source HVPE technique, the AlGaN material is compounded from the chemical reaction between NH3 and an aluminum-gallium chloride formed using HCl that is flowed over metallic Ga mixed with Al. The XRD measurements indicate that single-crystal hexagonal AlGaN with high Al content had been grown. The CL spectra at 4 K show that the distribution of the Al on the AlGaN surface for very high Al content (x = 0.8 in AlxGa1-xN) is not uniform. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOI： 10.1002/pssa.200420001

Web of Science

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

HS Ahn, KH Kim, M Yang, JY Yi, HJ Lee, CR Cho, HK Cho, SW Kim, T Narita, Y Honda, M Yamaguchi, N Sawaki

APPLIED SURFACE SCIENCE Vol. 243 ( 1-4 ) page： 178 - 182 2005.4

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer. (c) 2004 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.apsusc.2004.09.117

Web of Science

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2125? 2128 2005

Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 284 ( 3-4 ) page： 341?346 2005

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (a) Vol. 202 ( 6 ) page： 1048?1052 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 361-364 2005

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 251-254 2005

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Surf. Science Vol. 243 ( 1-4 ) page： 178-182 2005

Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2349?2352 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T Hikosaka, Y Honda, N Koide, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 251 - 254 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The electrical properties of a (1-101)GaN grown on an Si substrate were studied as a function of Si doping density. It was found that un-intentionally doped samples exhibited p-type conduction, while the doping of Si changed the type of conduction from p-type to n-type. The cathodeluminescence spectra at 4 K exhibited a strong edge emission peak at 357 nm followed by a defect-related emission at 370 nm. The intensity of the latter was enhanced by the Si doping and we found slight blue shift of the emission energy.

Web of Science

Growth of AlGaN on Al2O3 substrates by mixed-source HVPE Reviewed

KH Kim, JY Yi, HJ Lee, M Yang, HS Ahn, CR Cho, SW Kim, Y Honda, M Yamaguchi, N Sawaki

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Vol. 184 page： 361 - 364 2005

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The mixed-source hydride vapor phase epitaxy (HVPE) growth of AlGaN layer is performed on Al2O3 substrate. The AlGaN layer is studied by X-ray diffraction (XRD) measurement, Auger electron spectroscopy (AES) analysis and cathodoluminesecence (CL) spectrum to characterize the structural and optical properties. The Al composition estimated by the XRD measurement is 30 %. The room temperature CL spectrum exhibits a weak peak at 323 nm.

Web of Science

Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page： 2349 - 2352 2005

Language：English Publishing type：Research paper (international conference proceedings)

The growth of an InGaN / GaN double heterostructure (DH) was attempted on a stripe patterned GaN grown on a (111) Si substrate by selective area metal organic vapor phase epitaxy. The cathode luminescence (CL) spectroscopy at 4K suggests that we have an InGaN wire on the (0001) apex. Analysing the CL spectra, we found that the In composition is not uniform on the (1-101) facet, which was attributed to the diffusion of Ga on the facets. But the phenomenon depended on the TMIn (In source gas) flow rate and a uniform In composition was achieved under a certain flow rate. © 2005 WILEY-VCH Verlag GmbH &amp
Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200461558

Scopus

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, N. Sawaki

Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page： 2125 - 2128 2005

Language：English Publishing type：Research paper (international conference proceedings)

Uniform growth of thick GaN was attempted on an AlN templated (111) silicon substrate by hydride vapor phase epitaxy(HVPE). The results were very sensitive to the thickness of the AlN layer as well as the growth temperature. If the AlN is thinner than 50 nm, the surface of the silicon substrate was partly melted during the HVPE growth. If the AlN was thicker than 50 nm, the melting of the silicon surface was drastically suppressed. Uniform growth without degradation of the Si substrate was achieved at 1000°C with a thick AlN template layer. © 2005 WILEY-VCH Verlag GmbH &amp
Co. KGaA, Weinheim.

DOI： 10.1002/pssc.200461575

Scopus

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Papers - HONDA, Yoshio