論文 - 天野 浩
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Growth and luminescence properties of magnesium-doped gallium nitride (GaN) prepared by MOVPE 査読有り
Amano Hiroshi, Kitoh Masahiro, Hiramatsu Kazumasa, Akasaki Isamu.
J. Electrochem. Soc. 137 巻 ( 0 ) 頁： 1639-1641 1990年
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UV and blue electroluminescence from aluminum/magnesium-doped gallium nitride/gallium nitride (Al/GaN:Mg/GaN) LED treated with low-energy electron beam irradiation (LEEBI) 査読有り
Amano H., Kitoh M., Hiramatsu K., Akasaki I.
Inst. Phys. Conf. Ser. 106 巻 ( 0 ) 頁： 725-730 1990年
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Preparation of aluminum gallium nitride/gallium nitride heterostructure by MOVPE 査読有り
Ito Kenji, Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 104 巻 ( 0 ) 頁： 533-538 1990年
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Growth of single crystal gallium nitride substrate using hydride vapor phase epitaxy 査読有り
Naniwae Kouichi, Itoh Shigetoshi, Amano Hiroshi, Itoh Kenji, Hiramatsu Kazumasa, Akasaki Isamu.
J. Crystal Growth 99 巻 ( 0 ) 頁： 381-384 1990年
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Cathodoluminescence of MOVPE-grown gallium nitride layer on a -alumina 査読有り
Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 99 巻 ( 0 ) 頁： 375-380 1990年
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P-type conduction in magnesium-doped gallium nitride treated with low-energy electron beam irradiation (LEEBI) 査読有り
H. Amano, M. Kito, K. Hiramatsu, I. Akasaki
Jpn. J. Appl. Phys. 28 巻 ( 0 ) 頁： L2112-L2114 1989年
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Effects of aluminum nitride buffer layer on crystallographic structure and on electrical and optical properties of gallium nitride and aluminum gallium nitride (Ga1-xAlxN, 0< x < 0.4) films grown on sapphire substrate by MOVPE 査読有り
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki
J. Crystal Growth 98 巻 ( 0 ) 頁： 209-219 1989年
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Heteroepitaxial growth and the effect of strain on the luminescent properties of gallium mononitride films on (11-20) and (0001) sapphire substrates 査読有り
H. Amano, K. Hiramatsu, I. Akasaki
Jpn. J. Appl. Phys. 27 巻 ( 0 ) 頁： L1384-L1386 1988年
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Electron beam effects on blue luminescence of zinc-doped gallium mononitride 査読有り
H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii
J. Lumin. 40-41 巻 ( 0 ) 頁： 121-122 1988年
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Effects of the buffer layer in metalorganic vapor phase epitaxy of gallium mononitride on sapphire substrate 査読有り
H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki
Thin Solid Films 163 巻 ( 0 ) 頁： 415-420 1988年
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Zinc related electroluminescent properties in MOVPE grown gallium nitride 査読有り
H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki
J. Crystal Growth 93 巻 ( 0 ) 頁： 79-82 1988年
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High-efficiency blue LED utilizing gallium nitride (GaN) film with an aluminum nitride (AlN) buffer layer grown by MOVPE 査読有り
I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki
Inst. Phys. Conf. Ser. 91 巻 ( 0 ) 頁： 633-636 1988年
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Crystal growth and properties of gallium nitride and its blue light-emitting diode 査読有り
I. Akasaki, H. Amano, N. Sawaki, M. Hashimoto, Y. Ohki, Y. Toyoda
Jpn Ann. Rev. Elec. Comp. & Telecom. 19 巻 ( 0 ) 頁： 295-307 1986年
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Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer 査読有り
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda
Appl. Phys. Lett. 48 巻 ( 0 ) 頁： 353-355 1986年
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Effects of hydrogen in an ambient on the crystal growth of gallium nitride using trimethyl gallium and ammonia 査読有り
M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki
J. Crystal Growth 68 巻 ( 0 ) 頁： 163-168 1984年