研究者詳細 - 天野　浩

論文 - 天野　浩

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On barrier-free vertical GaN PN junction diode enabled by ion-implantation and ex-situ Mg diffusion process

Singh S., Kwon W., Li X., Wang J., Watanabe H., Honda Y., Amano H., Sarkar B.

Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers 64 巻 ( 9 ) 2025年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers

This letter reports the application of ex-situ thermal diffusion of metallic Mg into GaN in mitigating the Schottky barrier that may arise underneath the standard Ni/Au contact to Mg ion-implanted GaN. The GaN PN junction diode realized after the Mg ion-implantation process resulted in a Schottky barrier in the p-side of the diode, in close agreement with the previous report. However, the diode that had an ex-situ thermal diffusion of Mg process after the ion-implantation process showed a dramatic increase in the forward current without introducing a compromise in the reverse breakdown voltage.

DOI： 10.35848/1347-4065/adfeef

SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes

Pristovsek M., Park J.H., Kwon W., Cheong H., Amano H.

Applied Physics Letters 127 巻 ( 7 ) 2025年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Letters

We demonstrate that inserting a fractional monolayer of SiN below the first InGaN quantum well (QW) does not change the In content but increases the external quantum efficiency (EQE) of light-emitting diodes (LEDs) and reduces the sidewall recombination, together with a small redshift and slight broadening of the emission. At low currents, we could directly measure the reduced emission from the sidewall of 80 μm diameter circular LEDs by inserting an SiN interlayer. This points to a reduced lateral diffusion of carriers in the QWs via an enhanced composition fluctuation indicated by the broadening of x-ray diffraction satellite peaks in addition to the formation of V-defects. Thus, the SiN interlayer increases the carrier localization in the QWs, which increases the EQE of LEDs due to fewer carriers reaching the sidewall as well as dislocations and point defects. The lateral localization of carriers could also explain the large scattering of the reported size dependencies of micro LEDs.

DOI： 10.1063/5.0272825

Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors

Kim H.Y., Horng R.H., Amano H., Seong T.Y.

Progress in Quantum Electronics 102 巻 2025年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Progress in Quantum Electronics

AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and microwave communication systems. A critical factor affecting the performance of AlGaN/GaN HEMTs is the formation of high-quality ohmic contacts to the source and drain, which facilitates efficient carrier injection from metal electrodes to the semiconductor. Therefore, various approaches have been employed to achieve the formation of high-quality ohmic contacts. This review presents recent advancements in ohmic contact technology for AlGaN/GaN HEMTs. Specifically, we introduce and discuss contact technologies focusing on multilayer schemes under different annealing conditions, Au-free metallization schemes, surface treatments, non-traditional annealing processes, recess etching, selective area regrowth, and ion implantation.

DOI： 10.1016/j.pquantelec.2025.100578

Role of Sidewall Conditions in the External Quantum Efficiency of InGaN-Based Micro-LEDs

Park, JH; Pristovsek, M; Han, DP; Seong, TY; Amano, H

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 19 巻 ( 6 ) 2025年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Physica Status Solidi Rapid Research Letters

This study aims to investigate the external quantum efficiency (EQE) of InGaN-based blue micro light-emitting diodes (μLEDs) depending on sidewall conditions and current stress. To this end, this study prepares two sets of InGaN blue μLEDs with sizes of 10 × 10 μm<sup>2</sup>, 20 × 20 μm<sup>2</sup>, and 40 × 40 μm<sup>2</sup>: 1) μLEDs with and without a 10 nm-thick ALD-SiO<inf>2</inf> interlayer and 2) μLEDs with varying atomic layer deposition (ALD)-Al<inf>2</inf>O<inf>3</inf> passivation layer thickness and tetramethylammonium hydroxide (TMAH) treatment time. The results of set 1 demonstrate that the ALD-SiO<inf>2</inf> interlayer layer has a significant effect on the EQE of μLEDs only at low current densities, as the interlayer effectively protects against subsequent plasma damage. The results of current stress show that the ALD-SiO<inf>2</inf> interlayer plays an important role at low current densities. The results of set 2 demonstrate that a sufficiently thick ALD passivation layer should be deposited to minimize sidewall interface states, and a short TMAH treatment time of 1 min is sufficient. The results in this study highlight that sidewall conditions have a substantial impact on the EQE at low current densities and indicate that optimizing ALD thickness and TMAH treatment time can reduce processing time and cost.

DOI： 10.1002/pssr.202500042

Comparison of chip size effects of thin film GaN-based μLEDs fabricated by plasma etching and ion implantation processing Open Access

Wan T.C., Tsai P.H., Lin H.W., Lin C.C., Wuu D.S., Amano H., Seong T.Y., Horng R.H.

Applied Surface Science Advances 27 巻 2025年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Surface Science Advances

We investigated the effects of chip size and N-polar n-GaN surface roughening on the performance of conventional thin-film blue-light micro-light-emitting diodes (TFFC μLEDs) and As<sup>+</sup> ion isolated TFFC blue μLEDs. For this, TFFC μLEDs with two different sizes of 10 × 10 μm<sup>2</sup> and 25 × 25 μm<sup>2</sup> pixel array were fabricated. In all samples, N-face n-GaN surfaces were etched using a 4 M KOH solution after laser lift-off (LLO) process. A 2 min-etching resulted in the formation of pyramids (size: ∼90 – ∼270 nm), while the 4 min-etching produces pyramids (∼370 – ∼780 nm). Regardless of treatments, all samples exhibit similar forward bias characteristics. For all samples, the light output power increased after n-GaN surface roughening. Before the LLO process, the 10 μm-μLEDs showed higher EQE than the other samples with the implanted μLEDs showing the lowest EQE. All samples exhibited their highest EQE after optimal 4-min etching. Unlike before LLO, after 4 min-etching, the 10 μm- and 25 μm-μLEDs show almost similar EQEs, while the implanted μLEDs reveal a slightly lower EQE than the mesa μLEDs, but produce up to 74 % EQE improvement. Furthermore, the 10 μm-μLEDs showed the shortest photoluminescence (PL) decay, while the 25 μm-μLEDs gave the longest PL decay. The 10 μm μLEDs showed the highest ideality factor and the As<sup>+</sup> ion-implanted μLEDs gave the lowest value. Based on time resolved PL and ideality factor, the size and etching time dependence of the EQE characteristics of all samples are described and discussed.

DOI： 10.1016/j.apsadv.2025.100776

Characteristics of 2DEG generated at the heterointerface of an AlN/GaN structure grown on an AlN substrate using metal organic vapor phase epitaxy

Yoshikawa, A; Kumabe, T; Sugiyama, S; Arai, M; Suda, J; Amano, H

JOURNAL OF APPLIED PHYSICS 137 巻 ( 19 ) 2025年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

A pseudomorphic AlN/GaN structure was grown on an AlN substrate using metalorganic vapor phase epitaxy (MOVPE). The Hall effect characteristics of two-dimensional electron gas induced at the interface between AlN and GaN and the properties of high-electron-mobility transistors (HEMTs) fabricated using the proposed AlN/GaN structures were investigated. The Hall effect measurements indicated that the electron mobility at room temperature was 294 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, the sheet carrier density was 1.1 × 10<sup>13</sup> cm<sup>−2</sup>, and the sheet resistance was 1930 Ω/sq. Cross-sectional transmission electron microscopy images revealed an extremely abrupt interface between the AlN and GaN layers. By contrast, surface atomic force microscopy measurements indicated that GaN exhibited a clear step-terrace surface and the AlN barrier layer exhibited the signs of transitioning to island-like growth. Furthermore, the HEMT devices exhibited clear transistor characteristics with a source-drain breakdown voltage of 2.3 kV and an ON/OFF ratio of >10<sup>7</sup>. These findings demonstrate the potential of MOVPE for fabricating AlN/GaN on AlN substrates, showing the inherent potential of AlN as a substrate.

DOI： 10.1063/5.0255068

Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

Idei, M; Sato, D; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 43 巻 ( 3 ) 2025年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Vacuum Science and Technology B

The dependence of the quantum efficiency (QE) of a Cs/O-activated negative-electron-affinity (NEA) state InGaN photocathode on threading dislocation density (TDD) was investigated. InGaN photocathodes with different TDDs were grown on sapphire and GaN substrates by metal-organic vapor-phase epitaxy (MOVPE). The TDDs were 1 × 10<sup>9</sup> cm<sup>−2</sup> on the sapphire substrate and less than 5 × 10<sup>6</sup> cm<sup>−2</sup> on the GaN substrate. After the activation of the NEA state of InGaN photocathode surfaces by Cs/O, the QEs were 1.1% on the sapphire substrate and 0.91% on the GaN substrate. Despite a TDD difference of approximately two orders of magnitude, the QEs were comparable. The results show that the QE is not limited by the high TDD in the InGaN photocathode.

DOI： 10.1116/6.0004199

Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH<sub>3</sub> Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation

Shimazu, H; Nishizawa, SI; Nitta, S; Amano, H; Nakamura, D

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 38 巻 ( 2 ) 頁： 311 - 323 2025年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IEEE Transactions on Semiconductor Manufacturing

Achieving long-duration, large bulk GaN growth is crucial to supply low-cost, high-quality GaN. Halogen-free vapor phase epitaxy (HF-VPE) is a promising method for bulk GaN growth but faces challenges due to severe polycrystals deposition on reactor components, such as the source-gas nozzles, which impedes stable, extended growth. In this study, we developed models to simulate the polycrystal deposition in HF-VPE-GaN growth conditions by including surface reactions of GaN formation and NH3 decomposition. Moreover, we devised conditions for controlling gas flow and interdiffusion to suppress polycrystal deposition around the source-gas nozzles. Experimental results aligned with simulations, showing that increasing the distance between Ga and NH<inf>3</inf> nozzles and replacing the sheath gas from H<inf>2</inf> to N<inf>2 </inf>effectively minimized polycrystal formation. The findings confirm that reducing NH<inf>3</inf> concentration through catalytic surface decomposition on refractory components is crucial to polycrystal suppression. Optimizing nozzle dimensions and gas species synergistically controls the gas flow and interdiffusion. The constructed models contribute to advancing the design of polycrystal suppressive structures and conditions for long-duration bulk GaN growth.

DOI： 10.1109/TSM.2025.3558328

Vertical GaN p-n diode with deeply etched mesas by contactless photo-electrochemical etching 査読有り

Toyoda, H; Kwon, W; Watanabe, H; Tsukamoto, R; Furusawa, Y; Itoh, Y; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 18 巻 ( 3 ) 頁： 036503 - 036503 2025年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

GaN p-n diodes were fabricated by contactless photo-electrochemical (PEC) etching, and their electrical characteristics were evaluated. A high vertical etching rate of 80 nm min<sup>−1</sup>, which is usable for device fabrication etching processes, was achieved using a H₃PO₄ based electrolyte containing S₂O₈<sup>2</sup>⁻ ions and intense UV light. The sidewalls after etching were perpendicular to the substrate owing to the directivity of UV light. Vertical GaN p-n diodes with deeply etched mesas were fabricated by contactless PEC etching and avalanche breakdown was confirmed. The results point to an alternative method of fabricating high-performance GaN power devices.

DOI： 10.35848/1882-0786/adbc43

Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment

Ishiguro, M; Sekiyama, K; Baratov, A; Maeda, S; Igarashi, T; Tajuddin, NSBA; Islam, N; Terai, S; Yamamoto, A; Kuzuhara, M; Sarkar, B; Amano, H; Asubar, JT

JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 2 ) 2025年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We demonstrate a normally-off operation in Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MIS-HEMTs with a high two-dimensional electron gas (2DEG) mobility enabled by a shallow recess channel structure and oxygen plasma treatment. In the channel region, the original 25-nm-thick AlGaN barrier layer was thinned down to 9 nm, which in principle, should yield a normally-on operation. However, we show that a pre-insulator deposition oxygen plasma treatment shifts the threshold voltage to +1.4 V. The relatively thick AlGaN barrier facilitated a minimal sacrifice of channel 2DEG mobility retaining a value as high as 1800 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, resulting in a high drain current of 600 mA mm<sup>−1</sup>.

DOI： 10.35848/1347-4065/adb256

Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment

Kwon, W; Itoh, Y; Tanaka, A; Watanabe, H; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 18 巻 ( 1 ) 2025年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

A vertical GaN p-n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 10<sup>17</sup>-3 × 10<sup>18 </sup>cm<sup>−3</sup> by annealing with an AlN capping layer at 1300 ℃ for 5 min under atmospheric N<inf>2</inf> pressure. The PND and JBSD exhibited specific on-resistances of 2.3-2.6 mΩ cm<sup>2</sup> and repeatable breakdowns at 1.95 kV without degradation in breakdown voltage or leakage current. Additionally, the JBSD achieved a high-on/off ratio of 9.1 × 10<sup>7</sup> between 1.5 V and −1 kV.

DOI： 10.35848/1882-0786/ada71a

High-speed modulation of probe current using scanning electron microscope with photocathode technology

Nishitani T., Sato D., Arakawa Y., Niimi K., Yasuda M., Koizumi A., Iijima H., Honda Y., Amano H.

Proceedings of SPIE the International Society for Optical Engineering 13426 巻 2025年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Proceedings of SPIE the International Society for Optical Engineering

Semiconductor inspection technology using e-beam-based voltage contrast (VC) observation provides information on the electrical state and characteristics of terminals with less than 100 nm size, such as the source, drain, and gate in a MOSFET. In VC observation, a nanometer-sized electron beam causes charge accumulation in the target electrode, which is detected as bright or dark according to its electrical state and characteristics. For reproducibility of VC observations for semiconductor inspection, it is essential to release the charge accumulation due to electron beam irradiation of the terminal via leakage currents around the terminal surface. For VC observation of target terminals in the field of view in SEM imaging, electron irradiation time can be used for charge accumulation and unirradiated time for release of charge accumulation within the electron beam scanning. Therefore, it is possible to repeatedly observe VC changes by appropriate selection of the irradiated electron beam current and scanning speed, in addition to the selection of the electron energy. In addition, more fine modulation of the irradiated electron beam current is essential to obtain VC observations with a higher dynamic range, but such modulation should not result in changes in the position or image quality of the SEM image. In this study, an SEM equipped with a photocathode electron gun (PC-SEM) was used to investigate the effect of beam current modulation by photoemission on the SEM image quality of position and focus. Furthermore, in VC observations integrating the local beam current modulation technology of the PC-SEM, the irradiation current was modulated only for the gate plugs in an nMOSFET, and changes in the contrast of the drain plugs were investigated.

DOI： 10.1117/12.3050433

Technological Advancements in AlGaN-Based Deep Ultraviolet Laser Diodes

Kushimoto M., Zhang Z., Yoshikawa A., Aoto K., Honda Y., Sasaoka C., Amano H.

Cs Mantech 2025 2025 International Conference on Compound Semiconductor Manufacturing Technology 2025年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Cs Mantech 2025 2025 International Conference on Compound Semiconductor Manufacturing Technology

AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) are expected to be applied to various applications such as sterilization, sensing, and laser processing as compact, efficient, and eco-friendly deep-ultraviolet light sources. To realize laser diodes operating in the DUV wavelength range (200 nm to 280 nm), our research group has achieved major breakthroughs such as high-quality AlGaN thin film crystals grown on AlN single-crystal substrates and p-type conductivity control through distributed polarization doping. As a result, pulsed lasing at room temperature was demonstrated. Furthermore, continuous-wave (CW) lasing has been successfully achieved by suppressing dislocation formation through stress concentration suppression and further design improvements. In this presentation, we will review the research results of our group on DUV LD devices and describe the key technologies that played an important role in these achievements.

Advances in Deep Ultraviolet Semiconductor Laser: From Material Challenges to Device Performance

Kushimoto M., Zhang Z., Yoshikawa A., Aoto K., Honda Y., Sasaoka C., Amano H.

2025 Conference on Lasers and Electro Optics Europe and European Quantum Electronics Conference CLEO Europe Eqec 2025 2025年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：2025 Conference on Lasers and Electro Optics Europe and European Quantum Electronics Conference CLEO Europe Eqec 2025

AlGaN-based deep ultraviolet (DUV) laser diodes (LDs) have garnered significant attention for a wide range of applications, including sterilization, sensing, and high-precision laser processing, owing to their compact size, high efficiency, and environmentally friendly properties. Despite these advantages, achieving practical device performance has been challenging due to the difficulty in realizing high-quality crystal growth and efficient carrier injection.

DOI： 10.1109/CLEO/EUROPE-EQEC65582.2025.11110927

Magnesium Intercalation in Gallium Nitride for Enhanced P-Type Doping and Device Performance

Wang J., Amano H.

Proceedings of the 16th IEEE International Conference on Electron Devices and Solid State Circuits Edssc 2025 頁： 52 - 54 2025年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Proceedings of the 16th IEEE International Conference on Electron Devices and Solid State Circuits Edssc 2025

P-type doping in gallium nitride (GaN) has traditionally relied solely on substitutional magnesium (Mg) incorporation. However, persistent limitations such as low hole mobility, limited hole concentration, and poor ohmic contact remain unresolved. Interstitial magnesium, long regarded as a deep-level compensating impurity detrimental to p-type doping, exhibits unexpected behavior at exceptionally high concentrations. This study demonstrates that, under such conditions, interstitial Mg atoms self-organize into aligned single-atomic layers, a phenomenon known as intercalation. Each Mg layer induces periodic polarity transitions in GaN, which may account for the experimentally observed increase in ionized acceptors and hole concentration post-intercalation. Furthermore, the uniaxial strain generated by these interstitial Mg layers modifies the valence band structure and enhances hole mobility. These synergistic advantages are attributed to '2D-doping' effects which offer fresh insights into semiconductor doping mechanisms. Crucially, achieving this 2D-doping regime requires only thermal annealing of a metallic Mg thin film deposited on GaN, offering a scalable and industrially viable pathway to overcome the constraints of conventional substitutional Mg doping. This discovery holds broad implications for optoelectronic and power device applications.

DOI： 10.1109/EDSSC64492.2025.11182923

Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy 査読有り

Ohnishi K., Hamasaki K., Nitta S., Fujimoto N., Watanabe H., Honda Y., Amano H.

Journal of Crystal Growth 648 巻 2024年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Crystal Growth

Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl2 and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl2 and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 1019 cm−3 is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

DOI： 10.1016/j.jcrysgro.2024.127923

InGaN-based blue and red micro-LEDs: Impact of carrier localization

Park J.H., Pristovsek M., Han D.P., Kim B., Lee S.M., Hanser D., Parikh P., Cai W., Shim J.I., Lee D.S., Seong T.Y., Amano H.

Applied Physics Reviews 11 巻 ( 4 ) 2024年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Reviews

Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization. The external quantum efficiency (EQE) of blue μLEDs decreases with size regardless of sidewall conditions, whereas that of red μLEDs is insignificant due to carrier localization. Atomic probe tomography examination of 30%, 15%, and 7.5% indium-concentrated InGaN layers used in red μLEDs shows that higher indium concentrations result in greater indium fluctuations, which promote carrier localization and thus shorten the diffusion length of carriers. Finally, by observing the peak wavelength of electroluminescence and the current density at peak EQE for both blue and red μLEDs, we find that radiative recombination rate in μLEDs is likely to be chip size dependent.

DOI： 10.1063/5.0195261

(Ultra)wide bandgap semiconductor heterostructures for electronics cooling

Cheng Z., Huang Z., Sun J., Wang J., Feng T., Ohnishi K., Liang J., Amano H., Huang R.

Applied Physics Reviews 11 巻 ( 4 ) 2024年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Reviews

The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.

DOI： 10.1063/5.0185305

Growth and Characterization of High Internal Quantum Efficiency Semipolar (101̅3) GaN-Based Light Emitting Diodes

Hu N., Park J.H., Wang J., Amano H., Pristovsek M.

ACS Applied Electronic Materials 6 巻 ( 11 ) 頁： 7960 - 7971 2024年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ACS Applied Electronic Materials

We report on the growth and characterization of semipolar (101̅3) InGaN/GaN light-emitting diodes (LEDs) on m-plane (101̅0) sapphire with high internal quantum efficiencies (IQEs). Based on earlier work on obtaining untwinned (101̅3) GaN templates on m-plane sapphire, we also succeeded in smoothing the relatively unstable (101̅3) surface using very low V/III ratios during metal-organic vapor phase epitaxy and in the growth of n-and p-doped layers to produce LEDs. Fitting the current-dependent emission, we found high IQEs, up to 86% at 460 nm. The IQEs decreased toward longer wavelengths, similar as for conventional Ga-polar (0001) oriented LEDs. However, the semipolar (101̅3) LEDs have their maximum IQE at much higher current densities than the polar (0001) LEDs due to the higher overlap between electron and hole wave function while maintaining a positive polarization. Together, this makes the (101̅3) orientation very attractive for future blue LEDs.

DOI： 10.1021/acsaelm.4c01312

窒化物半導体結晶の魅力と人・社会・地球への貢献 Open Access

天野浩

日本結晶学会誌 66 巻 ( Supplement ) 頁： s2 - s2 2024年11月

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