研究者詳細 - 天野　浩

論文 - 天野　浩

分割表示 855 件中 301 - 320 件目／全件表示 >>

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system 査読有り

Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano

Phys. Status Solidi B 254 巻 ( 8 ) 頁： 1600737/1-4 2017年8月

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Physica Status Solidi (A) Applications and Materials Science

We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p–n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current–voltage characteristics.

DOI： 10.1002/pssa.201600837

Web of Science

Scopus

Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity 査読有り

Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

Applied Physics Letters 110 巻 ( 26 ) 頁： 262105/1-5 2017年6月

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 査読有り

Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth 468 巻頁： 866-869 2017年6月

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 査読有り

S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano

Journal of Crystal Growth 468 巻頁： 110-113 2017年6月

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer 査読有り

Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

Journal of Crystal Growth 468 巻頁： 547-551 2017年6月

Effect of V/III ratio on the surface morphology and electrical properties of m–plane ( 101¯0 ) GaN homoepitaxial layers 査読有り

468 巻頁： 552-556 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m–plane (101¯0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m–plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m–GaN samples were characterized. Low leakage current densities of the order of 10−10 A/cm2 at −5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

DOI： 10.1016/j.jcrysgro.2016.12.012

Annealing eﬀect on threading dislocations in a GaN grown on Si substrate 査読有り

468 巻頁： 835-838 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）

Eﬀect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by oﬀ-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600–700 °C. In contrast, we could ﬁnd no remarkable changes in the a-type or a+c-type dislocations.

DOI： 10.1016/j.jcrysgro.2017.01.001

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 866 - 869 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Crystal Growth

A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7+0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices.

DOI： 10.1016/j.jcrysgro.2017.01.031

Web of Science

Scopus

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output 査読有り

Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics 56 巻頁： 061002 2017年5月

III-nitride core-shell nanorod array on quartz substrates

Bae Si-Young, Min Jung-Wook, Hwang Hyeong-Yong, Lekhal Kaddour, Lee Ho-Jun, Jho Young-Dahl, Lee Dong-Seon, Lee Yong-Tak, Ikarashi Nobuyuki, Honda Yoshio, Amano Hiroshi

SCIENTIFIC REPORTS 7 巻頁： 45345 2017年3月

紫外発光素子に向けたp層側光吸収低減の検討

安田俊輝, 桑原奈津子, 竹内哲也, 岩谷素顕, 上山智, 赤﨑勇, 天野浩

応用物理学会学術講演会講演予稿集 2017.1 巻 ( 0 ) 頁： 3400 - 3400 2017年3月

NEA-InGaNフォトカソードの量子効率に対する熱処理の効果

鹿島将央, 飯島北斗, 西谷智博, 佐藤大樹, 本田善央, 天野浩, 目黒多加志

応用物理学会学術講演会講演予稿集 2017.1 巻 ( 0 ) 頁： 1554 - 1554 2017年3月

フッ素系樹脂の深紫外発光ダイオード用封止樹脂としての耐久性とその劣化機構

長澤陽祐, 山田貴穂, 永井祥子, 平野光, 一本松正道, 青崎耕, 本田善央, 天野浩, 赤﨑勇

応用物理学会学術講演会講演予稿集 2017.1 巻 ( 0 ) 頁： 1136 - 1136 2017年3月

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

APPLIED PHYSICS EXPRESS 10 巻 ( 2 ) 2017年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

We investigated polarization doping for hole generation in abrupt and graded GaN/Al0.7Ga0.3N interfaces on Al0.99Ga0.01N templates. The abrupt interface exhibited hole generation, whereas the graded interface exhibited electron generation. In the graded AlxGa1%xN (x = 0.65-0), a graded part with an AlN mole fraction ranging from 0.2 to 0 showed a large relaxation. Theoretical estimation revealed that this part contained positive polarization charges, accumulating electrons. Via Mg doping in the graded AlGaN layer, we obtained a high hole concentration of 3 ' 1013cm%2. These results indicate that understanding the relaxation conditions in the graded layer is indispensable for polarization doping.

DOI： 10.7567/APEX.10.025502

Web of Science

Scopus

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template 査読有り

Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

Applied Physics Express 10 巻頁： 025502 2017年1月

From the dawn of gan-based light-emitting devices to the present day

Amano H.

Handbook of Solid-State Lighting and LEDs 頁： 3-12 2017年1月

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching 査読有り

Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

Physica Status Solidi b 253 巻頁： 1700387(1-7) 2017年

記述言語：英語掲載種別：研究論文（学術雑誌）

A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas
etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching,
high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method,
before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7E7 cm2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

DOI： 10.1002/pssb.201700387

Development of Sustainable Smart Society based on Transformative Electronics

Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁： . 2017年

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