研究者詳細 - 天野　浩

論文 - 天野　浩

分割表示 851 件中 241 - 260 件目／全件表示 >>

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan, H; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SC ) 頁： SC1044 2019年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We have studied the impact on the surface orientation of different sputtered Al layers followed by AlN layers sputtered on m-plane sapphire. These initial layers were then overgrown by AlN and followed by GaN using metal-organic vapor phase epitaxy (MOVPE). By increasing sputtering time of the initial Al layer from 0 s to 15 s, we obtained single phase (10-10), (10-13) and (10-14) GaN/AlN layers. The thickness of the initial Al layer was estimated by optical transmission measurements to be about 0.5-1 nm for the (10-13) orientation, and >1 nm for the (10-14) orientation. After MOVPE growth, no trace of metallic Al was found by transmission electron microscopy, indicating that this layer was fully converted to AlN.

DOI： 10.7567/1347-4065/ab1252

Web of Science

Scopus

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

APPLIED PHYSICS EXPRESS 12 巻 ( 6 ) 頁： 064009 2019年6月

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 256 巻 ( 6 ) 頁： 1800648 2019年6月

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 514 巻頁： 13-13 2019年5月

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 78-83 2019年4月

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 100-104 2019年4月

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

NATURE PHOTONICS 13 巻 ( 4 ) 頁： 233-244 2019年4月

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES 9 巻 ( 4 ) 頁： 045007 2019年4月

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

Yamada, J; Usami, S; Ueda, Y; Honda, Y; Amano, H; Maruyama, T; Naritsuka, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 4 ) 頁： 040904 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In order to advance the mass production of graphene devices, it is beneficial to avoid the difficulty graphene transfer process. Direct precipitation of graphene using a tungsten capping layer is convenient for this purpose, and is quite simple and compatible with conventional semiconductor fabrication processes. In this study, multilayer graphene was directly precipitated on a wafer of GaN-based blue LEDs to form a transparent electrode. The fabricated LED exhibited superior I-V characteristics and emitted blue luminescence around the probe of the electrode.

DOI： 10.7567/1347-4065/aafe70

Web of Science

Scopus

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50-53 2019年3月

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

APPLIED PHYSICS EXPRESS 12 巻 ( 3 ) 頁： 032004 2019年3月

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS 12 巻 ( 5 ) 頁： 689 2019年3月

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 頁： 106 - 108 2019年3月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Effect of drift layer thicknesses (DLT) (2, 15 and 30 μm) in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of 2 μm and 30 μm exhibit TFE through Poole-Frenkel emission and TE, respectively. However, the SBDs with DLT of 15 μm exhibit both TFE and TE. Activation energy (Ea) of traps was also calculated to be 0.69 eV for 2 μm, 0.38 for 15 μm and 0.4 eV for 30 μm respectively. Ea of 0.69 eV and 0.4 eV could be associated with screw threading dislocations and the presence of Mg in the grown drift layer, respectively.

DOI： 10.1109/EDTM.2019.8731215

Scopus

GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

中野崇志, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 宇佐美茂佳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 3122 - 3122 2019年2月

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58-65 2019年2月

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu, N; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 507 巻頁： 205 - 208 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Crystal Growth

Directional sputtering of Al and AlN on (1 0 −1 0) sapphire was used to obtain metal-polar (1 0 −1 3) templates. After overgrowth with AlN and GaN using metal-organic vapor phase epitaxy, we obtained untwinned (1 0 −1 3) GaN layers. Full width at half maximum of the X-ray rocking curve of symmetric (1 0 −1 3) GaN is less than 550 arcsec along both [3 0 −3 −2]GaN and [1 −2 1 0]GaN directions. Ga-polarity of the layers was confirmed by high-resolution scanning transmission electron microscopy. Careful optimization of time and temperature of the initial Al sputtered layer was a key parameter to achieve high quality GaN templates.

DOI： 10.1016/j.jcrysgro.2018.11.013

Web of Science

Scopus

高感度電子線ホログラフィーによるGaN系半導体のドーパント濃度分布の観察

仲野靖孝, 松本実子, 穴田智史, 山本和生, 石川由加里, 平山司, 安藤悠人, 小倉昌也, 田中敦之, 本田善央, 天野浩

まてりあ 58 巻 ( 2 ) 頁： 103 - 103 2019年2月

Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Hainey, M; Robin, Y; Amano, H; Usami, N

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Because of their >95% (111) surface orientation and very large (10-300 μm) grain sizes, sub-50 nm Group IV thin films fabricated by metal-induced crystallization are promising seed layers for epitaxy. However, methods for evaluating Group IV film quality for subsequent homo-and heteroepitaxial growth have not been widely reported. Here, we show how pole figures obtained by electron backscatter diffraction allow for texture analysis and measurement of grain misorientation. Correlations with Group IV thin film processing parameters such as annealing temperature and film quality in heteroepitaxially grown GaN films are developed.

DOI： 10.7567/1882-0786/aafb26

Web of Science

Scopus

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 頁： 026502 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed.

DOI： 10.7567/1882-0786/aafdb9

Web of Science

Scopus

Compositional control of homogeneous InGaN nanowires with the In content up to 90.

Zeghouane M, Avit G, André Y, Bougerol C, Robin Y, Ferret P, Castelluci D, Gil E, Dubrovskii VG, Amano H, Trassoudaine A

Nanotechnology 30 巻 ( 4 ) 頁： 044001 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nanotechnology

Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al2O3 templates by catalyst-free hydride vapor phase epitaxy using InCl3 and GaCl as group III element precursors. The influence of the partial pressures on the growth rate and composition of InGaN nanowires is investigated. It is shown how the InN mole fraction in nanowires can be finely tuned by changing the vapor phase composition. Thermodynamic calculations are presented that take into account different interconnected reactions in the vapor phase and show a good agreement with the compositional data. Energy dispersive x-ray spectroscopy profiles performed on single nanowires show a homogenous indium composition along the entire nanowire length. X-ray diffraction measurements performed on nanowires arrays confirm these data. High-resolution transmission electron microscopy analysis shows the wurtzite crystal structure with a reduced defect density for InGaN nanowires with the highest indium content.

DOI： 10.1088/1361-6528/aaec39

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論文 - 天野 浩

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論文 - 天野　浩