論文 - 天野 浩
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Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering 査読有り
Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 291-294 1998年
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The dependence of the band gap on alloy composition in strained AlGaN on GaN 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 205 巻 ( 0 ) 頁： R7-R8 1998年
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Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 195 巻 ( 0 ) 頁： 309-313 1998年
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The residual donor binding energy in AlGaN epitaxial layers 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 165 巻 ( 0 ) 頁： R3-R4 1998年
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On the nature of radiative recombination processes in GaN 査読有り
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 156 巻 ( 0 ) 頁： 239-244 1998年
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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S
Solid State Communications 105 巻 ( 0 ) 頁： 497-501 1998年
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Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy 査読有り
Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 1994-1996 1998年
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters 査読有り
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 36 巻 ( 0 ) 頁： 5393-5408 1997年
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Photoluminescence of exciton-polaritons in GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 50 巻 ( 0 ) 頁： 130-133 1997年
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Electron gas in modulation doped GaN/AlGaN structures 査読有り
Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 207-210 1997年
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 査読有り
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 176-180 1997年
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Electronic structure and temperature dependence of excitons in GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 172-175 1997年
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Melt-back etching of GaN 査読有り
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁： 295-298 1997年
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Recessed gate GaN MODFETs 査読有り
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁： 247-250 1997年
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The excitonic bandgap of GaN: dependence on substrate 査読有り
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics 41 巻 ( 0 ) 頁： 239-241 1997年
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance 査読有り
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics 41 巻 ( 0 ) 頁： 189-193 1997年
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Optical characterization of GaN and related materials 査読有り
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics 41 巻 ( 0 ) 頁： 181-184 1997年
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells 査読有り
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 36 巻 ( 0 ) 頁： L382-L385 1997年
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Optical properties of strained AlGaN and GaInN on GaN 査読有り
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 36 巻 ( 0 ) 頁： L177-L179 1997年
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Quantum beat spectroscopy on excitons in GaN 査読有り
Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology- 50 巻 ( 0 ) 頁： 205-207 1997年