論文 - 天野 浩
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Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 830-831 1998年
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Photoluminescence of GaN: Effect of electron irradiation 査読有り
Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 2968-2970 1998年
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Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect 査読有り
Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 1691-1693 1998年
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Pit formation in GaInN quantum wells 査読有り
Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y
Appl. Phys. Lett. 72 巻 ( 0 ) 頁： 710-712 1998年
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Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP 査読有り
Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁： R13351-R13354 1998年
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Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁： 1442-1450 1998年
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Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L697-L699 1998年
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GaN based laser diode with focused ion beam etched mirrors 査読有り
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L444-L446 1998年
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN 査読有り
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L316-L318 1998年
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Investigation of the leakage current in GaN p-n junctions 査読有り
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L1202-L1204 1998年
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Stress and defect control in GaN using low temperature interlayers 査読有り
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L1540-L1542 1998年
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters 査読有り
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 36 巻 ( 0 ) 頁： 5393-5408 1997年
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Photoluminescence of exciton-polaritons in GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 50 巻 ( 0 ) 頁： 130-133 1997年
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Electron gas in modulation doped GaN/AlGaN structures 査読有り
Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 207-210 1997年
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 査読有り
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 176-180 1997年
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Electronic structure and temperature dependence of excitons in GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁： 172-175 1997年
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Melt-back etching of GaN 査読有り
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁： 295-298 1997年
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Recessed gate GaN MODFETs 査読有り
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁： 247-250 1997年
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The excitonic bandgap of GaN: dependence on substrate 査読有り
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics 41 巻 ( 0 ) 頁： 239-241 1997年
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance 査読有り
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics 41 巻 ( 0 ) 頁： 189-193 1997年