論文 - 天野 浩
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Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth 248 巻 ( 0 ) 頁: 503-506 2003年
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Growth-induced defects in AlN/GaN superlattices with different periods 査読有り
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands 340-342 巻 ( 0 ) 頁: 1129-1132 2003年
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells 査読有り
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1129-1132 2002年
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Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes 査読有り
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum 389-393 巻 ( 0 ) 頁: 1493-1496 2002年
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MOVPE growth and characterization of Al1-xInxN/GaN multiple layers 査読有り
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 968-971 2002年
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 951-955 2002年
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Relaxation of misfit-induced stress in nitride-based heterostructures 査読有り
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 947-950 2002年
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Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements 査読有り
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1139-1142 2002年
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Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers 査読有り
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1133-1138 2002年
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Electric fields in polarized GaInN/GaN heterostructures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices 14 巻 ( 0 ) 頁: 219-258 2002年
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Critical issues in AlxGa1-xN growth 査読有り
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands 19 巻 ( 0 ) 頁: 219-222 2002年
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Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells 査読有り
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 巻 ( 0 ) 頁: 216-218 2002年
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Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates 査読有り
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1065-1069 2002年
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Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 235 巻 ( 0 ) 頁: 129-134 2002年
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Migration of dislocations in strained GaN heteroepitaxial layers 査読有り
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 952-955 2002年
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Mg incorporation in AlGaN layers grown on grooved sapphire substrates 査読有り
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 850-854 2002年
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Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells 査読有り
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 755-758 2002年
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Mass transport of AlxGa1-xN 査読有り
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 194 巻 ( 0 ) 頁: 485-488 2002年
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High-efficiency UV light-emitting diode 査読有り
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 194 巻 ( 0 ) 頁: 393-398 2002年
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 453-455 2002年