論文 - 天野 浩
-
Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection 査読有り
Hiramatsu M, Shiji K, Amano H, Hori M
Appl. Phys. Lett. 84 巻 ( 0 ) 頁： 4708-4710 2004年
-
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels 査読有り
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 69 巻 ( 0 ) 頁： 115216/1-115216/5 2004年
-
3509 nm UV laser diode grown on low-dislocation-density AlGaN 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters & Express Letters 43 巻 ( 0 ) 頁： L499-L500 2004年
-
Study on the seeded growth of AlN bulk crystals by sublimation 査読有り
Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 43 巻 ( 0 ) 頁： 7448-7453 2004年
-
Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements 査読有り
Takeda Y, Tabuchi M, Amano H, Akasaki I
Surface Review and Letters 10 巻 ( 0 ) 頁： 537-541 2003年
-
Growth-induced defects in AlN/GaN superlattices with different periods 査読有り
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands 340-342 巻 ( 0 ) 頁： 1129-1132 2003年
-
Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth 248 巻 ( 0 ) 頁： 503-506 2003年
-
Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 240 巻 ( 0 ) 頁： 356-359 2003年
-
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures 査読有り
Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 237 巻 ( 0 ) 頁： 353-364 2003年
-
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE 査読有り
Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science 216 巻 ( 0 ) 頁： 585-589 2003年
-
Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy 査読有り
Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science 216 巻 ( 0 ) 頁： 502-507 2003年
-
Violet and UV light-emitting diodes grown on ZrB2 substrate 査読有り
Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 200 巻 ( 0 ) 頁： 67-70 2003年
-
Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN 査読有り
Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 200 巻 ( 0 ) 頁： 110-113 2003年
-
Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields 査読有り
Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 195 巻 ( 0 ) 頁： 523-527 2003年
-
Group III nitride-based UV light emitting devices 査読有り
Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I
Physica Status Solidi A: Applied Research 195 巻 ( 0 ) 頁： 491-495 2003年
-
Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy 査読有り
Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 94 巻 ( 0 ) 頁： 2449-2453 2003年
-
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates 査読有り
Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 93 巻 ( 0 ) 頁： 1311-1319 2003年
-
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire 査読有り
Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D
Appl. Phys. Lett. 82 巻 ( 0 ) 頁： 349-351 2003年
-
High-power UV-light-emitting diode on sapphire 査読有り
Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 42 巻 ( 0 ) 頁： 400-403 2003年
-
ZrB2 substrate for nitride semiconductors 査読有り
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers 42 巻 ( 0 ) 頁： 2260-2264 2003年