論文 - 天野 浩
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Annihilation of threading dislocations in GaN/AlGaN 査読有り
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 366-370 2002年
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UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density 査読有り
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 296-300 2002年
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures 査読有り
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 21-26 2002年
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells 査読有り
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 161-166 2002年
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 107-111 2002年
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 813-817 2002年
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 713-718 2002年
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 197-201 2002年
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 139-142 2002年
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Optical characterization of III-nitrides 査読有り
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 112-122 2002年
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 92 巻 ( 0 ) 頁: 3657-3661 2002年
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Atomic arrangement at the AlN/ZrB2 interface 査読有り
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 81 巻 ( 0 ) 頁: 3182-3184 2002年
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Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 802-804 2002年
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates 査読有り
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 3093-3095 2002年
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Effect of n-type modulation doping on the photoluminescence of GaN/Al0 査読有り
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 1373-1375 2002年
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Optical absorption in polarized Ga1-xInxN/GaN quantum wells 査読有り
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 41 巻 ( 0 ) 頁: 11-14 2002年
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Novel aspects of the growth of nitrides by MOVPE 査読有り
Amano H, Akasaki I
Journal of Physics: Condensed Matter 13 巻 ( 0 ) 頁: 6935-6944 2001年
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Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum 353-356 巻 ( 0 ) 頁: 791-794 2001年
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Compensation mechanism in MOCVD and MBE grown GaN:Mg 査読有り
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 308-310 巻 ( 0 ) 頁: 38-41 2001年
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DX-like behavior of oxygen in GaN 査読有り
Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 302&303 巻 ( 0 ) 頁: 23-38 2001年