論文 - 天野 浩
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Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 39 巻 ( 0 ) 頁： L143-L145 2000年
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Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant 査読有り
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Appl. Phys. Lett. 76 巻 ( 0 ) 頁： 3388-3390 2000年
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Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers 査読有り
Chow W W, Amano H, Akasaki I
Appl. Phys. Lett. 76 巻 ( 0 ) 頁： 1647-1649 2000年
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Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain 査読有り
Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： R16318-R16321 2000年
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Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： R13302-R13305 2000年
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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study 査読有り
Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： R10607-R10609 2000年
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Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN 査読有り
Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： 16572-16577 2000年
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure 査読有り
Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K
Physical Review B: Condensed Matter and Materials Physics 61 巻 ( 0 ) 頁： 8202-8206 2000年
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Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 61 巻 ( 0 ) 頁： 2159-2163 2000年
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Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes 査読有り
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 39 巻 ( 0 ) 頁： L387-L389 2000年
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Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 76 巻 ( 0 ) 頁： 876-878 2000年
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Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 166 巻 ( 0 ) 頁： 471-474 2000年
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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells 査読有り
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. 88 巻 ( 0 ) 頁： 2677-2681 2000年
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Multiple peak spectra from InGaN/GaN multiple quantum wells 査読有り
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 80 巻 ( 0 ) 頁： 85-89 2000年
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InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Appl. Phys. Lett. 77 巻 ( 0 ) 頁： 1638-1640 2000年
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Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer 査読有り
Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N
Physica Status Solidi A: Applied Research 176 巻 ( 0 ) 頁： 31-34 1999年
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Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements 査読有り
Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁： 335-339 1999年
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Photoluminescence investigations of AlGaN on GaN epitaxial films 査読有り
Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁： 187-191 1999年
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X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer 査読有り
Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers 38 巻 ( 0 ) 頁： 281-284 1999年
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Energy loss rate of excitons in GaN 査読有り
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 272 巻 ( 0 ) 頁： 409-411 1999年