論文 - 天野 浩
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Microscopic investigation of Al043Ga057N on sapphire 査読有り
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 38 巻 ( 0 ) 頁: L1515-L1518 1999年
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Optical transitions of the Mg acceptor in GaN 査読有り
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers 38 巻 ( 0 ) 頁: L1422-L1424 1999年
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy 査読有り
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁: L1159-L1162 1999年
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GaN-based laser diode with focused ion beam-etched mirrors 査読有り
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 59 巻 ( 0 ) 頁: 382-385 1999年
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Correlation of vibrational modes and DX-like centers in GaN:O 査読有り
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁: 109-112 1999年
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration 査読有り
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁: 43-45 1999年
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Energy loss rate of excitons in GaN 査読有り
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 272 巻 ( 0 ) 頁: 409-411 1999年
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Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer 査読有り
Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁: 683-689 1999年
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Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells 査読有り
Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁: 399-403 1999年
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Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density 査読有り
Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 176 巻 ( 0 ) 頁: 147-151 1999年
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Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers 査読有り
Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 176 巻 ( 0 ) 頁: 137-140 1999年
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GaN-based MQW light emitting diodes 査読有り
Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I
Institute of Physics Conference Series 162 巻 ( 0 ) 頁: 31-35 1999年
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Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. 85 巻 ( 0 ) 頁: 7682-7688 1999年
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Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. 85 巻 ( 0 ) 頁: 3786-3791 1999年
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Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 75 巻 ( 0 ) 頁: 4106-4108 1999年
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Improvement of far-field pattern in nitride laser diodes 査読有り
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N
Appl. Phys. Lett. 75 巻 ( 0 ) 頁: 2960-2962 1999年
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Quantum-well width dependence of threshold current density in InGaN lasers 査読有り
Chow W W, Amano H, Takeuchi T, Han J
Appl. Phys. Lett. 75 巻 ( 0 ) 頁: 244-246 1999年
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Stress evolution during metalorganic chemical vapor deposition of GaN 査読有り
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T
Appl. Phys. Lett. 74 巻 ( 0 ) 頁: 356-358 1999年
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Optical properties of doped InGaN/GaN multiquantum-well structures 査読有り
Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. 74 巻 ( 0 ) 頁: 3299-3301 1999年
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Optical investigations of AlGaN on GaN epitaxial films 査読有り
Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I
Appl. Phys. Lett. 74 巻 ( 0 ) 頁: 2456-2458 1999年