論文 - 天野 浩
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Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer 査読有り
Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁： 405-413 2000年
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Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas 査読有り
Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
J. Crystal Growth 221 巻 ( 0 ) 頁： 327-333 2000年
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Structural characterization of Al1-xInxN lattice-matched to GaN 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 209 巻 ( 0 ) 頁： 419-423 2000年
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Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells 査読有り
Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers 39 巻 ( 0 ) 頁： 413-416 2000年
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Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer 査読有り
Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 390-392 2000年
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Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design 査読有り
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 2425-2427 2000年
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The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 2385-2388 2000年
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Gain-switching of GaInN multiquantum well laser diodes 査読有り
Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T
Electronics Letters 36 巻 ( 0 ) 頁： 83-84 2000年
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Nitride-based laser diodes using thick n-AlGaN layers 査読有り
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N
Journal of Electronic Materials 29 巻 ( 0 ) 頁： 302-305 2000年
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Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices 査読有り
Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Journal of Electronic Materials 29 巻 ( 0 ) 頁： 252-255 2000年
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Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method 査読有り
Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku 21 巻 ( 0 ) 頁： 162-168 2000年
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Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire 査読有り
Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku 21 巻 ( 0 ) 頁： 126-133 2000年
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Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 39 巻 ( 0 ) 頁： L143-L145 2000年
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Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN 査読有り
Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： 16572-16577 2000年
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure 査読有り
Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K
Physical Review B: Condensed Matter and Materials Physics 61 巻 ( 0 ) 頁： 8202-8206 2000年
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Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 61 巻 ( 0 ) 頁： 2159-2163 2000年
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Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes 査読有り
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 39 巻 ( 0 ) 頁： L387-L389 2000年
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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study 査読有り
Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 62 巻 ( 0 ) 頁： R10607-R10609 2000年
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Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 166 巻 ( 0 ) 頁： 471-474 2000年
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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells 査読有り
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. 88 巻 ( 0 ) 頁： 2677-2681 2000年