論文 - 天野 浩
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Radiative energy transfer in magnesium-doped gallium nitride/chromium(3+)-doped alumina (GaN:Mg/Al2O3:Cr3+) epitaxial systems 査読有り
K. Maier, J. Schneider, I. Akasaki and H. Amano.
Jpn. J. Appl. Phys. 32 巻 ( 0 ) 頁： L846-L848 1993年
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Perspective of the UV/blue light emitting devices based on gallium nitride and related compounds 査読有り
Akasaki Isamu, Amano Hiroshi.
Optoelec. -Devices and Technol. 7 巻 ( 0 ) 頁： 49-56 1992年
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Hydride vapor phase epitaxial growth of a high quality gallium nitride film using a zinc oxide buffer layer 査読有り
Detchprohm T., Hiramatsu K., Amano H., Akasaki I.
Appl. Phys. Lett. 61 巻 ( 0 ) 頁： 2688-2690 1992年
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Cathodoluminescence properties of undoped and zinc-doped aluminum gallium nitride grown by metalorganic vapor phase epitaxy 査読有り
Itoh Kenji, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.
Jpn. J. Appl. Phys. 30 巻 ( 0 ) 頁： 1604-1608 1991年
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Stimulated emission in MOVPE-grown gallium nitride (GaN) film 査読有り
Amano Hiroshi, Asahi Tsunemori, Kito Masahiro, Akasaki Isamu.
J. Lumin. 48-49 巻 ( 0 ) 頁： 889-892 1991年
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Photoluminescence of magnesium-doped p-type gallium nitride (GaN) and electroluminescence of gallium nitride (GaN) p-n junction LED 査読有り
Akasaki Isamu, Amano Hiroshi, Kito Masahiro, Hiramatsu Kazumasa.
J. Lumin. 48-49 巻 ( 0 ) 頁： 666-670 1991年
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Growth and properties of single crystalline gallium nitride films by hydride vapor phase epitaxy 査読有り
Akasaki I., Naniwae K., Itoh K., Amano H., Hiramatsu K.
Crystal Properties and Preparation 32-34 巻 ( 0 ) 頁： 154-157 1991年
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Growth of silicon-doped aluminum gallium nitride on (0001) sapphire substrate by metalorganic vapor phase epitaxy 査読有り
Murakami Hiroshi, Asahi Tsunemori, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.
J. Crystal Growth 115 巻 ( 0 ) 頁： 648-651 1991年
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Doping of gallium nitride with silicon and properties of blue m/i/n/n+ gallium nitride LED with silicon-doped n+-layer by MOVPE 査読有り
Koide N., Kato H., Sassa M., Yamasaki S., Manabe K., Hashimoto M., Amano H., Hiramatsu K., Akasaki I.
J. Crystal Growth 115 巻 ( 0 ) 頁： 639-642 1991年
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Growth mechanism of gallium nitride grown on sapphire with aluminum nitride buffer layer by MOVPE 査読有り
Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., Oki K.
J. Crystal Growth 115 巻 ( 0 ) 頁： 628-633 1991年
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Cross-sectional TEM study of microstructures in MOVPE gallium nitride films grown on a -alumina with a buffer layer of aluminum nitride 査読有り
Kuwano Noriyuki, Shiraishi Tadayoshi, Koga Akihiro, Oki Kensuke, Hiramatsu Kazumasa, Amano Hiroshi, Itoh Kenji, Akasaki Isamu.
J. Crystal Growth 115 巻 ( 0 ) 頁： 381-387 1991年
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Growth of single crystalline gallium nitride film on silicon substrate using 3C silicon carbide as an intermediate layer 査読有り
Takeuchi Tetsuya, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.
J. Crystal Growth 115 巻 ( 0 ) 頁： 634-638 1991年
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MOVPE growth of gallium nitride on a misoriented sapphire substrate 査読有り
Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu, Kato Hisaki, Koide Norikatsu, Manabe Katsuhide.
J. Crystal Growth 107 巻 ( 0 ) 頁： 509-512 1991年
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Dynamics of laser sputtering at gallium nitride, gallium phosphide, and gallium arsenide surfaces 査読有り
Namiki A., Katoh K., Yamashita Y., Matsumoto Y., Amano H., Akasaki I.
J. Apl. Phys. 70 巻 ( 0 ) 頁： 3268-3274 1991年
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Metalorganic vapor phase epitaxial growth and properties of gallium mononitride/aluminum gallium nitride (Al01Ga09N) layered structures 査読有り
Itoh Kenji, Kawamoto Takeshi, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.
Jpn. J. Appl. Phys. 30 巻 ( 0 ) 頁： 1924-1927 1991年
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Growth of single crystal gallium nitride substrate using hydride vapor phase epitaxy 査読有り
Naniwae Kouichi, Itoh Shigetoshi, Amano Hiroshi, Itoh Kenji, Hiramatsu Kazumasa, Akasaki Isamu.
J. Crystal Growth 99 巻 ( 0 ) 頁： 381-384 1990年
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Cathodoluminescence of MOVPE-grown gallium nitride layer on a -alumina 査読有り
Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 99 巻 ( 0 ) 頁： 375-380 1990年
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Stimulated emission near ultraviolet at room temperature from a gallium nitride (GaN) film grown on sapphire by MOVPE using an aluminum nitride (AlN) buffer layer 査読有り
Amano Hiroshi, Asahi Tsunemori, Akasaki Isamu.
Jpn. J. Appl. Phys. 29 巻 ( 0 ) 頁： L205-L206 1990年
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Preparation of aluminum gallium nitride/gallium nitride heterostructure by MOVPE 査読有り
Ito Kenji, Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 104 巻 ( 0 ) 頁： 533-538 1990年
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Growth and luminescence properties of magnesium-doped gallium nitride (GaN) prepared by MOVPE 査読有り
Amano Hiroshi, Kitoh Masahiro, Hiramatsu Kazumasa, Akasaki Isamu.
J. Electrochem. Soc. 137 巻 ( 0 ) 頁： 1639-1641 1990年