論文 - 天野 浩
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Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer 査読有り
Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. 39 巻 ( 0 ) 頁： 6493-6495 2000年
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Radiative recombination in (In,Ga)N/GaN multiple quantum wells 査読有り
Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I
Materials Science Forum 338-342 巻 ( 0 ) 頁： 1571-1574 2000年
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Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method 査読有り
Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁： 432-440 2000年
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Mass transport and the reduction of threading dislocation in GaN 査読有り
Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁： 421-426 2000年
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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy 査読有り
Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁： 414-420 2000年
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Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer 査読有り
Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁： 405-413 2000年
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Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas 査読有り
Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
J. Crystal Growth 221 巻 ( 0 ) 頁： 327-333 2000年
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Structural characterization of Al1-xInxN lattice-matched to GaN 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 209 巻 ( 0 ) 頁： 419-423 2000年
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Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells 査読有り
Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers 39 巻 ( 0 ) 頁： 413-416 2000年
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Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer 査読有り
Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 390-392 2000年
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Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design 査読有り
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 2425-2427 2000年
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The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 39 巻 ( 0 ) 頁： 2385-2388 2000年
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Gain-switching of GaInN multiquantum well laser diodes 査読有り
Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T
Electronics Letters 36 巻 ( 0 ) 頁： 83-84 2000年
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Nitride-based laser diodes using thick n-AlGaN layers 査読有り
Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N
Journal of Electronic Materials 29 巻 ( 0 ) 頁： 302-305 2000年
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Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices 査読有り
Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Journal of Electronic Materials 29 巻 ( 0 ) 頁： 252-255 2000年
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Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method 査読有り
Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku 21 巻 ( 0 ) 頁： 162-168 2000年
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Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire 査読有り
Amano Hiroshi, Akasaki Isamu
Hyomen Kagaku 21 巻 ( 0 ) 頁： 126-133 2000年
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Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 39 巻 ( 0 ) 頁： L143-L145 2000年
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Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 166 巻 ( 0 ) 頁： 471-474 2000年
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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells 査読有り
Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I
J. Apl. Phys. 88 巻 ( 0 ) 頁： 2677-2681 2000年