論文 - 天野 浩
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁： 951-955 2002年
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Relaxation of misfit-induced stress in nitride-based heterostructures 査読有り
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁： 947-950 2002年
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Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements 査読有り
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁： 1139-1142 2002年
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Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers 査読有り
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁： 1133-1138 2002年
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Electric fields in polarized GaInN/GaN heterostructures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices 14 巻 ( 0 ) 頁： 219-258 2002年
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series 170 巻 ( 0 ) 頁： 813-817 2002年
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series 170 巻 ( 0 ) 頁： 713-718 2002年
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁： 197-201 2002年
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁： 139-142 2002年
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Optical characterization of III-nitrides 査読有り
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁： 112-122 2002年
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 92 巻 ( 0 ) 頁： 3657-3661 2002年
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Atomic arrangement at the AlN/ZrB2 interface 査読有り
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 81 巻 ( 0 ) 頁： 3182-3184 2002年
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Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 80 巻 ( 0 ) 頁： 802-804 2002年
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates 査読有り
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁： 3093-3095 2002年
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Effect of n-type modulation doping on the photoluminescence of GaN/Al0 査読有り
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁： 1373-1375 2002年
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Optical absorption in polarized Ga1-xInxN/GaN quantum wells 査読有り
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 41 巻 ( 0 ) 頁： 11-14 2002年
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Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells 査読有り
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 巻 ( 0 ) 頁： 216-218 2002年
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Critical issues in AlxGa1-xN growth 査読有り
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands 19 巻 ( 0 ) 頁： 219-222 2002年
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁： 107-111 2002年
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Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates 査読有り
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁： 1065-1069 2002年