論文 - 天野 浩
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN 査読有り
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
Applied Physics Express 2 巻 ( 0 ) 頁： 041002/1-041002/3 2009年
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Novel UV devices on high-quality AlGaN using grooved underlying layer 査読有り
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al
Journal of Crystal Growth 311 巻 ( 0 ) 頁： 2860-2863 2009年
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One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁： 2887-2890 2009年
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Optimization of electrode configuration in large GaInN light-emitting diodes 査読有り
Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu
Physica Status Solidic 6 巻 ( 0 ) 頁： 1416-1419 2009年
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Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer 査読有り
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁： 2850-2852 2009年
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Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN 査読有り
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Express 2 巻 ( 0 ) 頁： 061004/1-061004/3 2009年
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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates 査読有り
Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira
J. Crystal Growth 310 巻 ( 0 ) 頁： 2308-2313 2008年
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN 査読有り
Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 310 巻 ( 0 ) 頁： 2326-2329 2008年
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Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE 査読有り
Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3048-3050 2008年
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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth 査読有り
Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3045-3047 2008年
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InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy 査読有り
Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3023-3025 2008年
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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates 査読有り
Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 310 巻 ( 0 ) 頁： 3308-3312 2008年
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth 査読有り
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2145-2147 2008年
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire 査読有り
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2142-2144 2008年
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. 査読有り
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1906-1909 2008年
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1768-1770 2008年
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1582-1584 2008年
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1575-1578 2008年
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1559-1561 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 92 巻 ( 0 ) 頁： 151904/1-151904/3 2008年