論文 - 天野 浩
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁: 1768-1770 2008年
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C 5 巻 ( 0 ) 頁: 1582-1584 2008年
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁: 1575-1578 2008年
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁: 1559-1561 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 92 巻 ( 0 ) 頁: 151904/1-151904/3 2008年
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Photoluminescence from highly excited AlN epitaxial layers. 査読有り
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. 92 巻 ( 0 ) 頁: 131912/1-131912/3 2008年
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen 査読有り
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: 4 巻 ( 0 ) 頁: 2211-2214 2007年
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Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. 査読有り
Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁: 5782-5784 2007年
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Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy 査読有り
Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁: L307-L310 2007年
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Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy 査読有り
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁: 1458-1462 2007年
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Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact 査読有り
Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁: 115-118 2007年
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. 査読有り
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology 18 巻 ( 0 ) 頁: 025401/1-025401/6 2007年
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Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact 査読有り
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 4 巻 ( 0 ) 頁: 2708-2711 2007年
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy 査読有り
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C 4 巻 ( 0 ) 頁: 2528-2531 2007年
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Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy 査読有り
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C 4 巻 ( 0 ) 頁: 2502-2505 2007年
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Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE 査読有り
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 4 巻 ( 0 ) 頁: 2272-2276 2007年
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Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques 査読有り
Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.
Philosophical Magazine 87 巻 ( 0 ) 頁: 2019-2039 2007年
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates 査読有り
Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 91 巻 ( 0 ) 頁: 221901/1-221901/3 2007年
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Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates 査読有り
Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.
Physica B 401-402 巻 ( 0 ) 頁: 302-306 2007年
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth 査読有り
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁: L948-L950 2007年