論文 - 天野 浩
-
Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B 376-377 巻 ( 0 ) 頁: 440-443 2006年
-
Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate 査読有り
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B 376-377 巻 ( 0 ) 頁: 491-495 2006年
-
Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B 376-377 巻 ( 0 ) 頁: 440-443 2006年
-
6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method 査読有り
Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.
Materials Science Forum 527 巻 ( 0 ) 頁: 263-266 2006年
-
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure 査読有り
Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.
Thin Solid Films 515 巻 ( 0 ) 頁: 768-770 2006年
-
X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN 査読有り
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi B 243 巻 ( 0 ) 頁: 1524-1528 2006年
-
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates 査読有り
Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A 203 巻 ( 0 ) 頁: 1632-1635 2006年
-
Microstructure of thick AlN grown on sapphire by high-temperature MOVPE 査読有り
Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi A 203 巻 ( 0 ) 頁: 1626-1631 2006年
-
Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells 査読有り
Haratizadeh Hamid, Monemar Bo, Amano Hiroshi
Physica Status Solidi A 203 巻 ( 0 ) 頁: 149-153 2006年
-
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC 査読有り
Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.
J. Apl. Phys. 99 巻 ( 0 ) 頁: 093108/1-093108/4 2006年
-
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy 査読有り
Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Appl. Phys. Lett. 89 巻 ( 0 ) 頁: 221901/1-221901/2 2006年
-
Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact 査読有り
Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: L319-L321 2006年
-
High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact 査読有り
Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: L1048-L1050 2006年
-
Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り
Akasaki Isamu, Amano Hiroshi.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: 9001-9010 2006年
-
High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio 査読有り
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: 8639-8643 2006年
-
Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire 査読有り
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: 2509-2513 2006年
-
Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy 査読有り
Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁: 2502-2504 2006年
-
Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells 査読有り
Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.
Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu 5 巻 ( 0 ) 頁: 73-77 2006年
-
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 査読有り
Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O
Nature Materials 5 巻 ( 0 ) 頁: 810-816 2006年
-
Growth of high-quality AlN at high growth rate by high-temperature MOVPE 査読有り
Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C 3 巻 ( 0 ) 頁: 1617-1619 2006年