研究者詳細 - 天野　浩

論文 - 天野　浩

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Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN 査読有り

Tomoyuki Tanikawa, Tomotaka Sano, Maki Kushimoto, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

Jpn. J. Appl. Phys. 52 巻 ( 8 ) 頁： 08JC05 2013年8月

記述言語：英語掲載種別：研究論文（学術雑誌）

InGaN/GaN multiple quantum wells (MQWs) on semipolar (1101) GaN microstripes on a Si substrate were fabricated and their optical properties were investigated. From cathodoluminescence (CL) analysis, strong CL emission was obtained in an MQW emitting at 433 nm. However, dark lines appeared in MQWs emitting at longer wavelengths. These dark lines are attributed to lattice relaxation and the generation of misfit dislocations and stacking faults in an MQW, resulting in nonradiative centers. The internal quantum efficiency (IQE) was estimated from excitation-power-dependent photoluminescence analysis. The (1101) InGaN/GaN MQW had a high IQE owing to the high crystalline quality of the underlying GaN and the reduced piezoelectric field. The IQE at a carrier concentration of 1×1018 cm-3 in a sample emitting at 490 nm was as high as 90%. The efficiency decreased in a sample with a higher indium content in the MQW due to the generation of misfit dislocations and stacking faults.

DOI： 10.7567/JJAP.52.08JC05

Stacking Faults and Luminescence Property of InGaN Nanowires 査読有り

Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

Jpn. J. Appl. Phys. 52 巻 ( 8 ) 頁： 08JE06 2013年8月

記述言語：英語掲載種別：研究論文（学術雑誌）

InGaN nanowires (NWs) were grown on (111)Si substrate using radio-frequency plasma-assisted molecular beam epitaxy, and the density of the stacking faults (SFs) in the InGaN NWs was estimated. High-density SFs were observed in the scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) images of the InGaN NWs, and a few zincblende layers appeared in the wurtzite structure. When growth temperature increased, the density of the SFs in the InGaN NW, the photoluminescence (PL) peak wavelength, and the full width at half maximum (FWHM) of PL spectra decreased, whereas the integrated PL intensity increased. These results suggest that a high growth temperature is effective for decreasing the density of SFs in InGaN NWs, and InGaN NWs grown at high temperature have strong PL luminescence due to the low In composition and the corresponding low SFs density.

DOI： 10.7567/JJAP.52.08JE06

AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN 査読有り

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

Journal of Crystal Growth 370 巻 ( 1 ) 頁： 16-21 2013年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

The GaN/AlN multilayer structure was grown on a stripe-patterned and dot-patterned Si substrate, and subsequently annealed at 1200 °C in H2 and NH3 atmosphere. We achieved an AlN/air structure by the decomposition of GaN from the microcracks of AlN. Partially crack-free AlN layers were observed over a 5×5 μm area in the c-plane of AlN/air DBRs.

DOI： 10.1016/j.jcrysgro.2012.09.062

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN 査読有り

Hiroshi Amano

Japanese journal of applied physics 52 巻 ( 5 ) 頁： 050001-1-050001-10 2013年5月

担当区分：筆頭著者記述言語：英語掲載種別：研究論文（学術雑誌）

With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.

DOI： 10.7567/JJAP.52.050001

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy 査読有り

Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

Physica Status Solidi C 10 巻 ( 3 ) 頁： 369-372 2013年3月

Effects of low energy e-beam irradiation on cathodoluminescence from GaN 査読有り

Suihkonen, S.; Nykaenen, H.; Tanikawa, T.; Yamaguchi, M.; Honda, Y.; Amano, H.

Physica Status Solidi A 210 巻 ( 2 ) 頁： 383-385 2013年2月

Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy 査読有り

Chen, S ; Kawai, Y ; Kondo, H ; Ishikawa, K ; Takeda, K ; Kano, H ; Sekine, M ; Amano, H Hori, M

Japanese Journal of Applied Physics 52 巻 ( 2 ) 頁： 021001-021006 2013年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

A high-density radical source (HDRS) was developed by optimizing the antenna structure and introducing an external magnetic field to plasma. Nitrogen radical generation by the HDRS at a density of 2.3 ×1012 atoms cm-3, which was one order higher than that for the conventional radical source (CRS), was achieved. The HDRS- and CRS-assisted InGaN growth in molecular beam epitaxy (MBE) was carried out. For the HDRS case, a diffraction peak in the X-ray rocking curve of the grown InGaN films showed a narrower peak, which width below 600 arcsec even with a high growth rate of 1.4 µm/h for InGaN. MBE with the assistance of HDRS has a great potential in the growth of nitride films with a lower mosaicity and a higher growth rate.

DOI： 10.7567/JJAP.52.021001

Surface potential effect on excitons in AlGaN/GaN quantum well structures 査読有り

Pozina, G.; Hemmingsson, C.; Amano, H.; Monemar, B.

Applied Physics Letters 102 巻 ( 8 ) 頁： 082110/1-082110/4 2013年2月

Individual roles of atoms and ions during hydrogen plasma passivation of surface defects on GaN created by plasma etching 査読有り

Chen, Shang; Ishikawa, Kenji; Lu, Yi; Kometani, Ryosuke; Kondo, Hiroki; Tokuda, Yutaka; Egawa, Takashi; Amano, Hiiroshi; Sekine, Amano; Hori, Masaru

Japanese Journal of Applied Physics 51 巻 ( 11 ) 頁： 111002/1-11102/5 2012年11月

記述言語：英語掲載種別：研究論文（学術雑誌）

In the recovery of photoluminescence intensities for band-edge emissions at around 3.47 eV in the case of gallium nitride (GaN), we have studied the individual roles of hydrogen atoms (H) and hydrogen ions (H-n(+)). Surface defects such as nitrogen vacancies created by plasma etching were passivated by H termination. By utilizing hydrogen plasmas, we clarified the recovery efficiency by optical and stoichiometrical improvements with respect to the balance between the fluxes of H and H-n(+). By deflecting H-n(+) by applying an electric field, the efficiency was improved using an identical H dosage, since the simultaneous irradiation of the energetic H-n(+) promoted the desorption of the formed passivated Ga-H bonds.

DOI： 10.1143/JJAP.51.111002

Correlation between device performance and defects in GaInN-based solar cells 査読有り

Mori, Mikiko; Kondo, Shinichiro; Yamamoto, Shota; Nakao, Tatsuro; Fujii, Takahiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

Applied Physics Express 5 巻 ( 8 ) 頁： 082301/1-082301/3 2012年8月

記述言語：英語掲載種別：研究論文（学術雑誌）

We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 10(7) cm(-2). In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

DOI： 10.1143/APEX.5.082301

MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate 査読有り

Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,Takayuki Sugiyama, Hiroshi Amano, Mamoru Imade, Yusuke Mori

Journal of Crystal Growth 351 巻 ( 1 ) 頁： 126-130 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized.

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates 査読有り

Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

Physca Status Solidi c 9 巻 ( 3-4 ) 頁： 480-483 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We proposed an in-situ void formation technique using high-temp. AlN growth on GaN stripes in order to reduce residual stress. Microcracks were obsd. during the growth of AlN; the GaN stripes then sublimated from the microcracks while keeping the AlN shell, resulting in void formation in the AlN shell structure. After GaN regrowth on this AlN shell structure, we successfully coalesced the GaN stripes to form a smooth, thick GaN layer having voids at the GaN/substrate interface. Raman spectroscopy confirmed that the residual tensile stress was decreased. The thermal stress decreased owing to the sepn. between the GaN layer and a foreign substrate.

DOI： 10.1002/pssc.201100502

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate 査読有り

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

Physica Status Solidi c 9 巻 ( 3-4 ) 頁： 875-878 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage (Vth = -1.8 V). On the other hand, a c-plane HFET (c-HFET) with the same barrier thickness (20 nm) shows a small current collapse, although Vth was neg. large (Vth = -4 V). Current collapse in a-HFET was not large compared with that in conventional c-HFET on GaN. A c-HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin-barrier c-HFET (Vth = -1.8 V) were particularly large. Therefore, an a-plane device is promising for a small or pos. Vth with small current collapse.

DOI： 10.1002/pssc.201100397

Laser lift-off of AlN/sapphire for UV light-emitting diodes 査読有り

Aoshima, Hiroki; Takeda, Kenichiro; Takehara, Kosuke; Ito, Shun; Mori, Mikiko; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

Physica Status Solidi C 9 巻 ( 3-4 ) 頁： 753-756 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA.

DOI： 10.1002/pssc.201100491

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE 査読有り

Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

Physica Status Solidi c 9 巻 ( 3-4 ) 頁： 646-649 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio-frequency plasma-assisted mol. beam epitaxy (RF-MBE), and investigated their In compositional distribution by energy dispersive x-ray spectroscopy (EDX). The In compn. line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In compn. at the top of the NWs depends on the growth temp. and the In flux ratio. However, the In compns. at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface.

DOI： 10.1002/pssc.201100446

Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors 査読有り

Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Physica Status Solidi c 9 巻 ( 3-4 ) 頁： 942-944 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）

We report on the electrical properties of AlInN/GaInN
heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6.
The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure
field-effect transistors exhibited static characteristics.
The maximum drain-source current reached a value of
0.26 A/mm.

DOI： 10.1002/pssc.201100492

High carrier concentration in high Al-composition AlGaN-channel HEMTs 査読有り

Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Ueno, Masaki; Nakamura, Takao; Yafune, Norimasa; Sakuno, Keiichi; Tokuda, Hirokuni; Kuzuhara, Masaaki; Takeda, Kenichiro; Iwaya, Motoaki; Amano, Hiroshi

9 巻 ( 2 ) 頁： 373-376 2012年6月

記述言語：英語掲載種別：研究論文（学術雑誌）

High Al-compn. (Al = 51%) and low Al-compn. (Al = 20%) AlGaN-channel high-electron-mobility transistors (HEMTs) on AlN layers with very high carrier concn. were demonstrated. In two types of HEMTs, 2-dimensional electron gases (2DEG) were clearly obsd. and peak carrier concn. and sheet carrier concn. were approx. 1020 cm-3 and higher than 2 × 1013 cm-2, resp. From the X-ray diffraction (XRD) measurements, it was obsd. that the AlGaN channel layers on the AlN layers were partially relaxed and the degree of relaxation decreased with increasing Al-compn. of AlGaN channel layers. Therefore the misfit dislocations in the high Al-compn. HEMTs were considered to be lower than those in the low Al-compn. HEMTs. Furthermore, it was revealed that very high Al-compn. of AlGaN barrier layers can be grown coherently on the AlGaN channel layers in consequence of the partly relaxation of the AlGaN channel layers, which of lattice consts. of a-axis were smaller than that of fully relaxed AlGaN channel layers. Therefore very high carrier concn. of 2DEG can be obtained in spite of the high Al-compn. of AlGaN channel layers. We considered that this high carrier concn. of 2DEG was necessary to demonstrate high Al-compn. AlGaN-channel HEMTs.

DOI： 10.1002/pssc.201100289

窒化物ワイドギャップ半導体の現状と展望　　―バルクGaN単結晶成長技術開発の観点から― 査読有り

天野　浩

応用物理 81 巻 ( 6 ) 頁： 455-463 2012年6月

Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates 査読有り

Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics 51 巻頁： 051001 2012年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have demonstrated crack-free 30-pair-AlN/GaN distributed Bragg reflectors (DBRs) grown on AlN templates for the first time. A reasonably high reflectivity of 97.5% was obtained. X-ray diffraction measurements revealed that the AlN templates cause compressive stress in DBRs. At the same time, the AlN/GaN DBRs were found to relax to average AlGaN alloys with AlN mole fractions determined by the thickness ratio of the AlN layer to one pair of AlN and GaN in DBRs regardless of the underlying template, AlN or GaN.

DOI： 10.1143/JJAP.51.051001

Growth of GaN and AlGaN on (100) beta-Ga2O3 substrates 査読有り

Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

9 巻 ( 3-4 ) 頁： 519-522 2012年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β-Ga2O3 substrates was significantly improved by the facet-controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the highcrystalline-quality GaN and Al0.08Ga0.92N on β-Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low-temperature buffer layers.
This method is useful for the fabrication of verticaltype ultraviolet (UV) light-emitting diodes (LEDs) on β-Ga2O3 substrates.

DOI： 10.1002/pssc.201100499

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