論文 - 天野 浩
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Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. 査読有り
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum 556-557 巻 ( 0 ) 頁: 335-338 2007年
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification 査読有り
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁: 349-353 2007年
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Microstructure in nonpolar m-plane GaN and AlGaN films 査読有り
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁: 288-292 2007年
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE 査読有り
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 300 巻 ( 0 ) 頁: 141-144 2007年
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio 査読有り
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 300 巻 ( 0 ) 頁: 136-140 2007年
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁: 265-267 2007年
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates 査読有り
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁: 261-264 2007年
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers 査読有り
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁: 257-260 2007年
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE 査読有り
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁: 215-218 2007年
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Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. 査読有り
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B 244 巻 ( 0 ) 頁: 1848-1852 2007年
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Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. 査読有り
Inaba Katsuhiko, Amano Hiroshi.
Physica Status Solidi B 244 巻 ( 0 ) 頁: 1775-1779 2007年
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Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well 査読有り
Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B 244 巻 ( 0 ) 頁: 1727-1734 2007年
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One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters 査読有り
Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A 204 巻 ( 0 ) 頁: 2005-2009 2007年
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High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate 査読有り
Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.
Physica Status Solidi A 204 巻 ( 0 ) 頁: 2000-2004 2007年
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Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. 査読有り
Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.
Acta Physica Polonica, A 112 巻 ( 0 ) 頁: 395-400 2007年
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Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates 査読有り
Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.
Physica Status Solidi C 3 巻 ( 0 ) 頁: 1392-1395 2006年
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A hydrogen-related shallow donor in GaN? 査読有り
Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B 376-377 巻 ( 0 ) 頁: 460-463 2006年
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Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B 376-377 巻 ( 0 ) 頁: 440-443 2006年
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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate 査読有り
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B 376-377 巻 ( 0 ) 頁: 491-495 2006年
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Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B 376-377 巻 ( 0 ) 頁: 440-443 2006年