論文 - 天野 浩
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth 査読有り
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2145-2147 2008年
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire 査読有り
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2142-2144 2008年
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. 査読有り
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1906-1909 2008年
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1768-1770 2008年
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1582-1584 2008年
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1575-1578 2008年
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1559-1561 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 92 巻 ( 0 ) 頁： 151904/1-151904/3 2008年
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Photoluminescence from highly excited AlN epitaxial layers. 査読有り
Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi
Appl. Phys. Lett. 92 巻 ( 0 ) 頁： 131912/1-131912/3 2008年
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen 査読有り
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: 4 巻 ( 0 ) 頁： 2211-2214 2007年
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth 査読有り
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁： L948-L950 2007年
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Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. 査読有り
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum 556-557 巻 ( 0 ) 頁： 335-338 2007年
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification 査読有り
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁： 349-353 2007年
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Microstructure in nonpolar m-plane GaN and AlGaN films 査読有り
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁： 288-292 2007年
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE 査読有り
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 300 巻 ( 0 ) 頁： 141-144 2007年
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio 査読有り
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 300 巻 ( 0 ) 頁： 136-140 2007年
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁： 265-267 2007年
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates 査読有り
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁： 261-264 2007年
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers 査読有り
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁： 257-260 2007年
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE 査読有り
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁： 215-218 2007年