論文 - 天野 浩
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Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 310 巻 ( 0 ) 頁： 4996-4998 2008年
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Control of stress and crystalline quality in GaInN films used for green emitters 査読有り
Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 310 巻 ( 0 ) 頁： 4920-4922 2008年
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs 査読有り
Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi
Journal of Materials Science: Materials in Electronics 19 巻 ( 0 ) 頁： S316-S318 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.
Applied Physics Letters 92 巻 ( 0 ) 頁： 151904/1-151904/3 2008年
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High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Letters 93 巻 ( 0 ) 頁： 182108/1-182108/3 2008年
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen 査読有り
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: 4 巻 ( 0 ) 頁： 2211-2214 2007年
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates 査読有り
Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 91 巻 ( 0 ) 頁： 221901/1-221901/3 2007年
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Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates 査読有り
Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.
Physica B 401-402 巻 ( 0 ) 頁： 302-306 2007年
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth 査読有り
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 46 巻 ( 0 ) 頁： L948-L950 2007年
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Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. 査読有り
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum 556-557 巻 ( 0 ) 頁： 335-338 2007年
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification 査読有り
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁： 349-353 2007年
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Microstructure in nonpolar m-plane GaN and AlGaN films 査読有り
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁： 288-292 2007年
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE 査読有り
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth 300 巻 ( 0 ) 頁： 141-144 2007年
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio 査読有り
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 300 巻 ( 0 ) 頁： 136-140 2007年
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁： 265-267 2007年
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates 査読有り
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth 298 巻 ( 0 ) 頁： 261-264 2007年
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers 査読有り
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth 298 巻 ( 0 ) 頁： 257-260 2007年
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE 査読有り
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth 298 巻 ( 0 ) 頁： 215-218 2007年
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Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. 査読有り
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B 244 巻 ( 0 ) 頁： 1848-1852 2007年
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Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. 査読有り
Inaba Katsuhiko, Amano Hiroshi.
Physica Status Solidi B 244 巻 ( 0 ) 頁： 1775-1779 2007年