論文 - 天野 浩
-
Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy 査読有り
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L1159-L1162 1999年
-
TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire 査読有り
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy 2 巻 ( 0 ) 頁： 693-694 1998年
-
Photoluminescence of GaN: Effect of electron irradiation 査読有り
Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 2968-2970 1998年
-
Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect 査読有り
Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 1691-1693 1998年
-
Pit formation in GaInN quantum wells 査読有り
Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y
Appl. Phys. Lett. 72 巻 ( 0 ) 頁： 710-712 1998年
-
Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP 査読有り
Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁： R13351-R13354 1998年
-
Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁： 1442-1450 1998年
-
Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L697-L699 1998年
-
GaN based laser diode with focused ion beam etched mirrors 査読有り
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L444-L446 1998年
-
Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN 査読有り
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L316-L318 1998年
-
Investigation of the leakage current in GaN p-n junctions 査読有り
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L1202-L1204 1998年
-
Stress and defect control in GaN using low temperature interlayers 査読有り
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁： L1540-L1542 1998年
-
Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 830-831 1998年
-
Weakly localized transport in modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 758-762 1998年
-
Room-temperature photoluminescence linewidth versus material quality of GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁： 1319-1322 1998年
-
Heteroepitaxy of group III nitrides for device applications 査読有り
Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁： 1115-1120 1998年
-
Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 621-624 1998年
-
Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures 査読有り
Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 831-836 1998年
-
Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 753-757 1998年
-
Thermal ionization energy of Si and Mg in (Al,Ga)N 査読有り
Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 528-531 1998年