論文 - 天野 浩
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Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride 査読有り
Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 60 巻 ( 0 ) 頁： 1746-1751 1999年
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Cooling dynamics of excitons in GaN 査読有り
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 59 巻 ( 0 ) 頁： R7797-R7800 1999年
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GaN-based laser diode with focused ion beam-etched mirrors 査読有り
Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 59 巻 ( 0 ) 頁： 382-385 1999年
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Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L984-L986 1999年
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Strain modification of GaN in AlGaN/GaN epitaxial films 査読有り
Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L498-L500 1999年
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Low-intensity ultraviolet photodetectors based on AlGaN 査読有り
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L487-L489 1999年
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Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures 査読有り
Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 38 巻 ( 0 ) 頁： L163-L165 1999年
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Microscopic investigation of Al043Ga057N on sapphire 査読有り
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 38 巻 ( 0 ) 頁： L1515-L1518 1999年
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Optical transitions of the Mg acceptor in GaN 査読有り
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers 38 巻 ( 0 ) 頁： L1422-L1424 1999年
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy 査読有り
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L1159-L1162 1999年
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Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers 査読有り
Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 176 巻 ( 0 ) 頁： 137-140 1999年
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Correlation of vibrational modes and DX-like centers in GaN:O 査読有り
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁： 109-112 1999年
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration 査読有り
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁： 43-45 1999年
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Energy loss rate of excitons in GaN 査読有り
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 272 巻 ( 0 ) 頁： 409-411 1999年
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Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer 査読有り
Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁： 683-689 1999年
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Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells 査読有り
Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 216 巻 ( 0 ) 頁： 399-403 1999年
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Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density 査読有り
Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 176 巻 ( 0 ) 頁： 147-151 1999年
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire 査読有り
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy 2 巻 ( 0 ) 頁： 693-694 1998年
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 758-762 1998年
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Room-temperature photoluminescence linewidth versus material quality of GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁： 1319-1322 1998年