論文 - 天野 浩
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Microscopic investigation of Al043Ga057N on sapphire 査読有り
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 38 巻 ( 0 ) 頁： L1515-L1518 1999年
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Optical transitions of the Mg acceptor in GaN 査読有り
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers 38 巻 ( 0 ) 頁： L1422-L1424 1999年
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy 査読有り
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 38 巻 ( 0 ) 頁： L1159-L1162 1999年
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration 査読有り
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁： 43-45 1999年
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Correlation of vibrational modes and DX-like centers in GaN:O 査読有り
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam 273-274 巻 ( 0 ) 頁： 109-112 1999年
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TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire 査読有り
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I
Electron Microscopy 2 巻 ( 0 ) 頁： 693-694 1998年
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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 758-762 1998年
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Room-temperature photoluminescence linewidth versus material quality of GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁： 1319-1322 1998年
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Heteroepitaxy of group III nitrides for device applications 査読有り
Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁： 1115-1120 1998年
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Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 621-624 1998年
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Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures 査読有り
Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 831-836 1998年
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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 753-757 1998年
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Thermal ionization energy of Si and Mg in (Al,Ga)N 査読有り
Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 528-531 1998年
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Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering 査読有り
Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁： 291-294 1998年
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The dependence of the band gap on alloy composition in strained AlGaN on GaN 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 205 巻 ( 0 ) 頁： R7-R8 1998年
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Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 195 巻 ( 0 ) 頁： 309-313 1998年
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The residual donor binding energy in AlGaN epitaxial layers 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 165 巻 ( 0 ) 頁： R3-R4 1998年
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On the nature of radiative recombination processes in GaN 査読有り
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 156 巻 ( 0 ) 頁： 239-244 1998年
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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S
Solid State Communications 105 巻 ( 0 ) 頁： 497-501 1998年
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Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy 査読有り
Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁： 1994-1996 1998年