研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 558 件中 161 - 180 件目／全件表示 >>

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang, X; Nitta, S; Pristovsek, M; Liu, YH; Liao, YQ; Kushimoto, M; Honda, Y; Amano, H

2D MATERIALS 7 巻 ( 1 ) 2020年1月

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh, DV; Hu, N; Amano, H; Honda, Y; Pristovsek, M

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34 巻 ( 12 ) 2019年12月

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. 査読有り

Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

Sensors (Basel, Switzerland) 19 巻 ( 23 ) 2019年11月

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

SCIENTIFIC REPORTS 9 巻 ( 1 ) 頁： 15802 2019年11月

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka, A; Nagamatsu, K; Usami, S; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Bockowski, M; Amano, H

AIP ADVANCES 9 巻 ( 9 ) 2019年9月

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto, K; Ono, T; Honda, Y; Torigoe, K; Kushimoto, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 7 ) 2019年7月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye, Z; Nitta, S; Nagamatsu, K; Fujimoto, N; Kushimoto, M; Deki, M; Tanaka, A; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 516 巻頁： 63 - 66 2019年6月

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Liu, Q; Fujimoto, N; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Frontiers of Nitride Semiconductor Research FOREWORD

Chichibu, SF; Kumagai, Y; Kojima, K; Deura, M; Akiyama, T; Arita, M; Fujioka, H; Fujiwara, Y; Hara, N; Hashizume, T; Hirayama, H; Holmes, M; Honda, Y; Imura, M; Ishii, R; Ishitani, Y; Iwaya, M; Kamiyama, S; Kangawa, Y; Katayama, R; Kawakami, Y; Kawamura, T; Kobayashi, A; Kuzuhara, M; Matsumoto, K; Mori, Y; Mukai, T; Murakami, H; Murotani, H; Nakazawa, S; Okada, N; Saito, Y; Sakai, A; Sekiguchi, H; Shiozaki, K; Shojiki, K; Suda, J; Takeuchi, T; Tanikawa, T; Tatebayashi, J; Tomiya, S; Yamada, Y

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan, H; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

Nagasawa, Y; Kojima, K; Hirano, A; Ipponmatsu, M; Honda, Y; Amano, H; Akasaki, I; Chichibu, SF

APPLIED PHYSICS EXPRESS 12 巻 ( 6 ) 2019年6月

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Sitar, Z; Amano, H

JOURNAL OF CRYSTAL GROWTH 514 巻頁： 13 - 13 2019年5月

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu, K; Ando, Y; Kono, T; Cheong, H; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 78 - 83 2019年4月

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method 査読有り

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

Jpn. J. Appl. Phys. 58 巻 ( 4 ) 2019年3月

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu, ZB; Nitta, S; Usami, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50 - 53 2019年3月

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino, M; Ando, Y; Deki, M; Toyabe, T; Kuriyama, K; Honda, Y; Nishimura, T; Amano, H; Kachi, T; Nakamura, T

MATERIALS 12 巻 ( 5 ) 2019年3月

Morphological study of InGaN on GaN substrate by supersaturation

Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58 - 65 2019年2月

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu, N; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 507 巻頁： 205 - 208 2019年2月

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed.

DOI： 10.7567/1882-0786/aafdb9

Web of Science

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

APPLIED PHYSICS LETTERS 114 巻 ( 1 ) 2019年1月

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