論文 - 本田 善央
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Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN 査読有り
Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JC05 2013年
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Stacking Faults and Luminescence Property of InGaN Nanowires 査読有り
Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JE06 2013年
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Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire 査読有り
Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JC04 2013年
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Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates 査読有り
Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;
Thin Solid Films 546 巻 頁: 108-113 2013年
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Defects generation and annihilation in GaN grown on patterned silicon substrate 査読有り
Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;
SPIE OPTO 頁: 86250K-86250K-6 2013年
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High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate 査読有り
Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JK09 2013年
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Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern 査読有り
Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB09 2013年
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Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer 査読有り
Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB11 2013年
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GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy 査読有り
Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JE07 2013年
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Effects of exciton localization on internal quantum efficiency of InGaN nanowires 査読有り
Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Journal of Applied Physics 114 巻 ( 15 ) 頁: 153506 2013年
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GaN Overgrowth on Thermally Etched Nanoporous GaN Template 査読有り
Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB03 2013年
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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy 査読有り
Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB14 2013年
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Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN 査読有り
Amano, Hiroshi;
Japanese Journal of Applied Physics 52 巻 ( 5R ) 頁: 50001 2013年
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Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy 査読有り
Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 10 巻 ( 3 ) 頁: 369 - 372 2013年
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Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB11 2013年
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Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates
Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min
Thin Solid Films 546 巻 頁: 108-113 2013年
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Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN 査読有り
Amano, Hiroshi
Japanese Journal of Applied Physics 52 巻 ( 5R ) 頁: 50001 2013年
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Stacking Faults and Luminescence Property of InGaN Nanowires
Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JE06 2013年
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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics 52 巻 ( 8S ) 頁: 08JB14 2013年
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Defects generation and annihilation in GaN grown on patterned silicon substrate
Sawaki, N, Ito, S, Nakagita, T, Iwata, H, Tanikawa, T, Irie, M, Honda, Y, Yamaguchi, M, Amano, H
SPIE OPTO 頁: 86250K-86250K-6 2013年