論文 - 本田 善央
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Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
Appl. Phys. Lett. 98 巻 ( 14 ) 頁: 141905 2011年4月
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Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano
Appl. Phys. Lett. 98 巻 ( 14 ) 頁: 141905 2011年4月
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Semi-polar GaN LEDs on Si substrate 査読有り
N. Sawaki, Y. Honda
SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁: 38-41 2011年4月
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Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano
Appl. Phys. Lett. 98 巻 ( 14 ) 頁: 141905 2011年4月
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Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates 査読有り
C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 318 巻 ( 1 ) 頁: 500-504 2011年3月
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Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates 査読有り
C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth 318 巻 ( 1 ) 頁: 500-504 2011年3月
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
SPIE 7939 巻 頁: 79391X 2011年3月
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
SPIE 7939 巻 頁: 79391X 2011年3月
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
SPIE 7939 巻 頁: 79391X 2011年3月
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate 査読有り
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
SPIE 7939 巻 頁: 79391X 2011年3月
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Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
Applied physics express 4 巻 ( 1 ) 頁: "012105 - 1"-"012105-3" 2011年1月
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Semi-polar GaN LEDs on Si substrate 査読有り
N. Sawaki and Y. Honda
SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁: 38-41 2011年1月
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Semi-polar GaN LEDs on Si substrate 査読有り
N. Sawaki, Y. Honda
SCIENCE CHINA Technological Sciences 54 巻 ( 1 ) 頁: 38-41 2011年1月
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Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Appl. Phys. Express 4 巻 ( 1 ) 頁: 01210_1-012105_3 2011年1月
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Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Appl. Phys. Express 4 巻 ( 1 ) 頁: 01210_1-012105_3 2011年1月
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Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁: 01AD04_1-01AD04_3 2011年1月
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Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁: 01AD04_1-01AD04_3 2011年1月
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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り
Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Appl. Phys. Lett. 98 巻 ( 5 ) 頁: 051902_1-051902_3 2011年1月
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Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁: 01AD04_1-01AD04_3 2011年1月
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Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Appl. Phys. Express 4 巻 ( 1 ) 頁: 01210_1-012105_3 2011年1月