研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 558 件中 61 - 80 件目／全件表示 >>

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Kumabe, T; Ando, Y; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 5 ) 2021年5月

Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Nagasawa, Y; Hirano, A; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Akasaki, I; Kojima, K; Chichibu, SF

JOURNAL OF APPLIED PHYSICS 129 巻 ( 16 ) 2021年4月

Experimental demonstration of GaN IMPATT diode at X-band

Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 4 ) 2021年4月

Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects

Schimmel, S; Tomida, D; Ishiguro, T; Honda, Y; Chichibu, S; Amano, H

CRYSTALS 11 巻 ( 4 ) 2021年4月

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

Yamada, T; Ando, Y; Watanabe, H; Furusawa, Y; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Suda, J; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 3 ) 2021年3月

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

Schimmel, S; Tomida, D; Saito, M; Bao, QX; Ishiguro, T; Honda, Y; Chichibu, S; Amano, H

CRYSTALS 11 巻 ( 3 ) 2021年3月

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

Yasuda, H; Nishitani, T; Ichikawa, S; Hatanaka, S; Honda, Y; Amano, H

QUANTUM BEAM SCIENCE 5 巻 ( 1 ) 2021年3月

NEA活性化方法におけるInGaNフォトカソードの電子放出特性の違い

鹿島将央, 佐藤大樹, 小泉淳, 飯島北斗, 西谷智博, 本田善央, 天野浩, 目黒多加志

応用物理学会学術講演会講演予稿集 2021.1 巻 ( 0 ) 頁： 1347 - 1347 2021年2月

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 11 巻 ( 2 ) 頁： 524 - 524 2021年2月

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 巻頁： 570 - 581 2021年

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 24 ) 2020年12月

Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

Nagasawa, Y; Hirano, A; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Akasaki, I; Kojima, K; Chichibu, SF

APPLIED PHYSICS EXPRESS 13 巻 ( 12 ) 2020年12月

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Yang, X; Pristovsek, M; Nitta, S; Liu, YH; Honda, Y; Koide, Y; Kawarada, H; Amano, H

ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 41 ) 頁： 46466 - 46475 2020年10月

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 10 巻 ( 10 ) 頁： 2614 - 2623 2020年10月

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 479 巻頁： 7 - 12 2020年9月

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 10 ) 2020年9月

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Kimura, T; Ohnishi, K; Amano, Y; Fujimoto, N; Araidai, M; Nitta, S; Honda, Y; Amano, H; Kangawa, Y; Shiraishi, K

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 8 ) 2020年8月

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures 国際誌

Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁： . 2020年7月

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO 国際誌

Ohnishi, K; Amano, Y; Fujimoto, N; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 13 巻 ( 6 ) 頁： . 2020年6月

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