研究者詳細 - 本田　善央

論文 - 本田　善央

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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates 査読有り

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express 4 巻 ( 1 ) 頁： 01210_1-012105_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN 査読有り

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. 98 巻 ( 5 ) 頁： 051902_1-051902_3 2011年1月

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy 査読有り

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. 50 巻 ( 1 ) 頁： 01AD04_1-01AD04_3 2011年1月

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate 査読有り

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes 査読有り

Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8 巻 ( 7-8 ) 2011年

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation 査読有り

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E 42 巻 ( 10 ) 頁： 2575-2578 2010年10月

HVPE growth of a -plane GaN on a GaN template (110)Si substrate 査読有り

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) 7 巻 ( 7-8 ) 頁： 1760–1763 2010年7月

HVPE growth of a -plane GaN on a GaN template (110)Si substrate 査読有り

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) 7 巻 ( 7-8 ) 頁： 1760–1763 2010年7月

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製査読有り

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report 109 巻 ( 422 ) 頁： 23 - 28 2010年2月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製査読有り

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report 109 巻 ( 423 ) 頁： 23 - 28 2010年2月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

HVPE growth of a-plane GaN on a GaN template (110)Si substrate 査読有り

Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 7 巻 ( 7-8 ) 2010年

Percolation transport in an AlGaN/GaN heterostructure 招待有り査読有り

N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

Journal of Physics: Conference Series 193 巻頁： 012012_1-012012_4 2009年11月

Percolation transport in an AlGaN/GaN heterostructure 招待有り査読有り

N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi

Journal of Physics: Conference Series 193 巻頁： 012012_1-012012_4 2009年11月

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates 査読有り

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Korean Phys. Soc. 54 巻 ( 6 ) 頁： 2363 2009年6月

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