研究者詳細 - 本田　善央

(001)Si傾斜基板上への常圧選択MOVPE成長法により、(1-101)面を表面とするGaNが作製できる。この方法で得られるGaN(1-101)面は窒素面となり、ガリウムを最表面とする(0001)面とは、成長モードや不純物の取り込みが異なると予想される。実際、この(1-101)GaNはノンドーピングでp型伝導性を示した。この試料にSiドーピングを行った結果、p型伝導からn型伝導へと変化した。一方、Cドーピングでは試料はすべてp型伝導を示し、ドーピングによる正孔濃度の増加が確認された。これは(1-101)面においてSiはドナー不純物、Cはアクセプター不純物として働くことを示唆しており、p型伝導はCの窒素原子との置換によるものであると考えられる。

CiNii Research

[Congenital middle ear cholesteatoma: experience in 48 cases]. 査読有り

Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

Nihon Jibiinkoka Gakkai kaiho 106 巻 ( 9 ) 頁： 856 - 65 2003年9月

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy.

Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

Japanese Journal of Applied Physics 40 巻 ( 3B ) 頁： 1896 - 1898 2001年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Japan Society of Applied Physics

A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

DOI： 10.1143/jjap.40.1896

CiNii Research

Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy

37 巻 ( 8B ) 頁： L966 - L969 1998年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：社団法人応用物理学会

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

DOI： 10.1143/jjap.37.l966

CiNii Research

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

JOURNAL OF MATERIALS CHEMISTRY C 8 巻 ( 25 ) 頁： 8668 - 8675 2020年7月

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures 査読有り

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁： . 2020年7月

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 217 巻 ( 14 ) 2020年7月

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO 査読有り

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 13 巻 ( 6 ) 頁： . 2020年6月

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices 査読有り

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 539 巻頁： . 2020年6月

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka, A; Inotsume, S; Harada, S; Hanada, K; Honda, Y; Ujihara, T; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai, T; Kushimoto, M; Zhang, ZY; Sugiyama, N; Schowalter, LJ; Honda, Y; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS 116 巻 ( 12 ) 2020年3月

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 3 ) 2020年3月

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Sato, D; Honda, A; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

MICROELECTRONIC ENGINEERING 223 巻 2020年2月

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Ye, Z; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 2 ) 2020年2月

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