研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 558 件中 201 - 220 件目／全件表示 >>

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes 国際誌

Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system 国際誌

Nagamatsu, K; Nitta, S; Ye, Z; Nagao, H; Miki, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 国際誌

Sun, Z; Song, PF; Nitta, S; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 866 - 869 2017年6月

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer 国際誌

Lee, HJ; Bae, SY; Lekhal, K; Tamura, A; Suzuki, T; Kushimoto, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 547 - 551 2017年6月

Effect of V/III ratio on the surface morphology and electrical properties of <i>m</i>-plane (10(1)over-bar0) GaN homoepitaxial layers 国際誌

Barry, OI; Tanaka, A; Nagamatsu, K; Bae, SY; Lekhal, K; Matsushita, J; Deki, M; Nitta, S; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 552 - 556 2017年6月

Annealing effect on threading dislocations in a GaN grown on Si substrate 国際誌

468 巻頁： 835 - 838 2017年6月

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output 査読有り

56 巻 ( 6 ) 2017年6月

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 国際誌

468 巻頁： 110 - 113 2017年6月

III-nitride core-shell nanorod array on quartz substrates 査読有り

7 巻 2017年3月

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method 国際誌

Jeon, H; Jeon, I; Lee, GS; Bae, SG; Ahn, HS; Yang, M; Yi, SN; Yu, YM; Honda, Y; Sawaki, N; Kim, SW

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy 国際誌

Lee, GS; Jeon, H; Ahn, HS; Yang, M; Yi, SN; Yu, YM; Lee, SC; Honda, Y; Sawaki, N; Kim, SW

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Development of Sustainable Smart Society based on Transformative Electronics 査読有り

頁： . 2017年

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M, Ando Y, Usami S, Nagamatsu K, Kushimoto M, Deki M, Tanaka A, Nitta S, Honda Y, Pristovsek M, Kawai H, Yagi S, Amano H

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁： . 2017年

Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer 国際誌

Lee, HJ; Bae, SY; Lekhal, K; Mitsunari, T; Tamura, A; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 454 巻頁： 114 - 120 2016年11月

Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE 国際誌

Lekhal, K; Bae, SY; Lee, HJ; Mitsunari, T; Tamura, A; Deki, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 447 巻頁： 55 - 61 2016年8月

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study 国際誌

Nagai, S; Yamada, K; Hirano, A; Ippommatsu, M; Ito, M; Morishima, N; Aosaki, K; Honda, Y; Amano, H; Akasaki, I

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 8 ) 2016年8月

記述言語：英語掲載種別：研究論文（学術雑誌）

To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265 nm. Furthermore, a 3 × 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm<sup>2</sup>-class lighting.

DOI： 10.7567/JJAP.55.082101

Web of Science

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering 国際誌

Yamamoto, T; Tamura, A; Usami, S; Mitsunari, T; Nagamatsu, K; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H<inf>2</inf>treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN.

DOI： 10.7567/JJAP.55.05FD03

Web of Science

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

Kusaba, A; Kangawa, Y; Honda, Y; Amano, H; Kakimoto, K

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

Study of radiation detection properties of GaN pn diode

Sugiura, M; Kushimoto, M; Mitsunari, T; Yamashita, K; Honda, Y; Amano, H; Inoue, Y; Mimura, H; Aoki, T; Nakano, T

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 国際誌

Bae, SY; Jung, BO; Lekhal, K; Lee, DS; Deki, M; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

記述言語：英語掲載種別：研究論文（学術雑誌）

We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

DOI： 10.7567/JJAP.55.05FG03

Web of Science

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