研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 558 件中 21 - 40 件目／全件表示 >>

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

SCIENTIFIC REPORTS 12 巻 ( 1 ) 頁： 21208 2022年12月

Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes

Nishitani, T; Arakawa, Y; Noda, S; Koizumi, A; Sato, D; Shikano, H; Iijima, H; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 40 巻 ( 6 ) 2022年12月

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 22 ) 2022年11月

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

Cai, WT; Furusawa, Y; Wang, J; Park, JH; Liao, YQ; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 21 ) 2022年11月

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 11 ) 2022年11月

The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2

Kashima, M; Itokawa, Y; Kanai, T; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

APPLIED SURFACE SCIENCE 599 巻 2022年10月

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

JOURNAL OF APPLIED PHYSICS 132 巻 ( 14 ) 2022年10月

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

Schimmel, S; Salamon, M; Tomida, D; Neumeier, S; Ishiguro, T; Honda, Y; Chichibu, SF; Amano, H

MATERIALS 15 巻 ( 17 ) 2022年9月

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy

Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 8 ) 2022年8月

Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 592 巻 2022年8月

Weak metastability of Al x Ga1-x N (x=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

Hirano, A; Nagasawa, Y; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Kojima, K; Chichibu, SF

APPLIED PHYSICS EXPRESS 15 巻 ( 7 ) 2022年7月

Space-Charge Profiles and Carrier Transport Properties in Dopant-Free GaN-Based p-n Junction Formed by Distributed Polarization Doping

Kumabe, T; Kawasaki, S; Watanabe, H; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 16 巻 ( 7 ) 2022年7月

Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n=2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Nagasawa, Y; Kojima, K; Hirano, A; Ippommatsu, M; Honda, Y; Amano, H; Chichibu, SF

JOURNAL OF PHYSICS D-APPLIED PHYSICS 55 巻 ( 25 ) 2022年6月

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

Scientific reports 12 巻 ( 1 ) 頁： 8175 2022年5月

Laser slice thinning of GaN-on-GaN high electron mobility transistors

Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

SCIENTIFIC REPORTS 12 巻 ( 1 ) 頁： 7363 2022年5月

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Park, JH; Cai, W; Cheong, H; Ushida, Y; Lee, DH; Ando, Y; Furusawa, Y; Honda, Y; Lee, DS; Seong, TY; Amano, H

JOURNAL OF APPLIED PHYSICS 131 巻 ( 15 ) 2022年4月

"Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

Kumabe, T; Watanabe, H; Ando, Y; Tanaka, A; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED

Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode

Nagata, K; Anada, S; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Liao, YQ; Chen, T; Wang, J; Cai, WT; Ando, YT; Yang, X; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

APPLIED PHYSICS LETTERS 120 巻 ( 12 ) 2022年3月

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