研究者詳細 - 本田　善央

論文 - 本田　善央

分割表示 558 件中 81 - 100 件目／全件表示 >>

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Liu, Q; Fujimoto, N; Shen, J; Nitta, S; Tanaka, A; Honda, Y; Sitar, Z; Bockowski, M; Kumagai, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 539 巻頁： . 2020年6月

Impact of high-temperature implantation of Mg ions into GaN 国際誌

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 5 ) 頁： . 2020年5月

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Chen, KJ; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月

Simultaneous Growth of Multi-Color Micro LEDs Based on Super Thin Micro-Platelets with Various Surface Areas

Cai Wentao, Kushimoto Maki, Manato Deki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 巻 ( 0 ) 頁： 3111 - 3111 2020年2月

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms

Yamamoto, K; Nakano, K; Tanaka, A; Honda, Y; Ando, Y; Ogura, M; Matsumoto, M; Anada, S; Ishikawa, Y; Amano, H; Hirayama, T

MICROSCOPY 69 巻 ( 1 ) 頁： 1 - 10 2020年2月

Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

Sato, D; Nishitani, T; Honda, Y; Amano, H

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 巻 ( 1 ) 2020年1月

マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

小島一信, 長澤陽祐, 平野光, 一本松正道, 杉江隆一, 本田善央, 天野浩, 赤﨑勇, 秩父重英

日本結晶成長学会誌 47 巻 ( 3 ) 頁： n/a 2020年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：日本結晶成長学会

The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.

DOI： 10.19009/jjacg.47-3-04

CiNii Research

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 頁： 349 - 352 2020年

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Nagasawa, Y; Sugie, R; Kojima, K; Hirano, A; Ippommatsu, M; Honda, Y; Amano, H; Akasaki, I; Chichibu, SF

JOURNAL OF APPLIED PHYSICS 126 巻 ( 21 ) 2019年12月

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current 国際誌

Usami, S; Mayama, N; Toda, K; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 114 巻 ( 23 ) 2019年6月

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates 国際誌

Usami, S; Tanaka, A; Fukushima, H; Ando, Y; Deki, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors 国際誌

Uemura, K; Deki, M; Honda, Y; Amano, H; Sato, T

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability 国際誌

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

中野崇志, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 宇佐美茂佳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 3122 - 3122 2019年2月

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano, T; Chokawa, K; Araidai, M; Shiraishi, K; Oshiyama, A; Kusaba, A; Kangawa, Y; Tanaka, A; Honda, Y; Amano, H

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 頁： . 2019年

昇温脱離法によるInGaN表面上のCs層の解析

鹿島将央, 佐藤大樹, 小泉淳, 西谷智博, 本田善央, 天野浩, 飯島北斗, 目黒多加志

応用物理学会学術講演会講演予稿集 2018.1 巻 ( 0 ) 頁： 1670 - 1670 2018年3月

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

Yates, L; Pavlidis, G; Graham, S; Usami, S; Nagamatsu, K; Honda, Y; Amano, H

PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018) 頁： 831 - 837 2018年

NEA-InGaNフォトカソードの量子効率に対する熱処理の効果

鹿島将央, 飯島北斗, 西谷智博, 佐藤大樹, 本田善央, 天野浩, 目黒多加志

応用物理学会学術講演会講演予稿集 2017.1 巻 ( 0 ) 頁： 1554 - 1554 2017年3月

フッ素系樹脂の深紫外発光ダイオード用封止樹脂としての耐久性とその劣化機構

長澤陽祐, 山田貴穂, 永井祥子, 平野光, 一本松正道, 青崎耕, 本田善央, 天野浩, 赤﨑勇

応用物理学会学術講演会講演予稿集 2017.1 巻 ( 0 ) 頁： 1136 - 1136 2017年3月

窒化ホウ素を用いたGaN-MISキャパシタの作製と電気特性評価

松下淳矢, 永松謙太郎, Yang Xu, 田中敦之, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩

応用物理学会学術講演会講演予稿集 2016.2 巻 ( 0 ) 頁： 2888 - 2888 2016年9月

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