論文 - 本田 善央
-
Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates 査読有り
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Korean Phys. Soc. 54 巻 ( 6 ) 頁: 2363 2009年6月
-
*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate 査読有り
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar
phys. stat. sol. (c) 6 巻 ( S2 ) 頁: S772 2009年5月
-
*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate 査読有り
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar
phys. stat. sol. (c) 6 巻 ( S2 ) 頁: S772 2009年5月
-
*Growth and properties of semi-polar GaN on a patterned silicon substrate 査読有り
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2867 2009年3月
-
Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy 査読有り
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2914 2009年3月
-
MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer 査読有り
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2891 2009年3月
-
*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si 査読有り
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2879 2009年3月
-
*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate 査読有り
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2875 2009年3月
-
*Growth and properties of semi-polar GaN on a patterned silicon substrate 査読有り
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2867 - 2867 2009年3月
-
*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si 査読有り
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2879 2009年3月
-
*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate 査読有り
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2875 2009年3月
-
Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy 査読有り
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2914 2009年3月
-
MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer 査読有り
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth 311 巻 ( 10 ) 頁: 2891 2009年3月
-
Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures 査読有り
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio
J. Phys. D 42 巻 ( 4 ) 頁: 045112-1 2009年1月
-
Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures 査読有り
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio
J. Phys. D 42 巻 ( 4 ) 頁: 045112-1 2009年1月
-
DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate 査読有り
Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻 頁: S772 - S775 2009年
-
Time-resolved spectroscopy in an undoped GaN (1-101) 査読有り
E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) 5 巻 ( 1 ) 頁: 367-369 2008年
-
Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE 査読有り
T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) 5 巻 ( 9 ) 頁: 2966-2968 2008年
-
*Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates 査読有り
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 5 巻 ( 6 ) 頁: 2234?2237 2008年
-
Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN 査読有り
J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) 5 巻 ( 6 ) 頁: 1746?1749 2008年