Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

Division display 161 - 180 of about 558 ／ All the affair displays >>

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS Vol. 7 ( 1 ) 2020.1

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

We studied the nucleation and growth of hexagonal BN (h-BN) on AlN template on c-plane sapphire by metalorganic vapor phase epitaxy as functions of growth temperature, deposition time, and triethylboron (TEB) partial pressure. A lateral growth rate of about 25 nm min(-1) for h-BN nuclei was obtained by atomic force microscopy and a nucleation activation energy of 2.1 eV was extracted from the temperature dependence of the nucleation density. A large TEB flow rate strongly enhances the formation of h-BN nuclei. At a reduced TEB flow rate, we observed a significantly decreased nuclei density and a delay in nucleation due to TEB desorption. By fine tuning the growth parameters, single-crystalline multilayer h-BN was successfully formed on AlN surface, as confirmed by x-ray diffraction and transmission electron microscopy (TEM). The epitaxial relationship between h-BN and AlN was [0 0 0 1](h-BN) parallel to [0 0 0 1](AlN) and [1 0 -10](h-BN) parallel to [1 1 -20](AlN) from TEM and electron backscatter diffraction measurements. In addition, TEM showed that the initial h-BN layers are not parallel and tend to form half-domes. On those half-domes (cap-shaped-like) a 2D lateral growth sets on, resulting in a well-oriented 2D multilayer observed in TEM. Thus, the surface topography further develops to form a relatively flat surface without wrinkles and finally a typical hexagon-like wrinkled surface at thicker h-BN layers. Particularly, the small h-BN nuclei have dangling bonds at their periphery that can interact with the substrate, forming actual bonds with AlN. Hence the choice on the substrate is important, despite the basal planes of multilayer h-BN are bonded by a weak van der Waals force.

DOI： 10.1088/2053-1583/ab46e6

Web of Science

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh Duc V, Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 34 ( 12 ) 2019.12

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Reviewed

Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

Sensors (Basel, Switzerland) Vol. 19 ( 23 ) 2019.11

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SCIENTIFIC REPORTS Vol. 9 ( 1 ) page： 15802 2019.11

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES Vol. 9 ( 9 ) 2019.9

Language：English Publishing type：Research paper (scientific journal)

In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagated from the GaN substrate. V-shaped dislocations consist of two straight parts. The straight parts of the V-shaped dislocations were separated from each other in the m-direction and tilted toward the step-flow direction of the GaN epitaxial layer. The V-shaped dislocations are continuous single dislocations having a Burgers vector component of 1a and an intrinsic stacking fault between their straight parts.

DOI： 10.1063/1.5114866

Web of Science

Scopus

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 7 ) 2019.7

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 516 page： 63 - 66 2019.6

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

The decomposition of ammonia (NH3) in nitrogen (N-2) ambient was studied under non-equilibrium conditions similar to those in a metal organic vapor phase epitaxy (MOVPE) reactor during the epitaxial growth of group-III nitrides. The gas phase was sampled at different positions and analyzed using a time-of-flight mass spectrometry system with a high resolution (better than 0.002 u). Our results expand earlier findings. Even at the high temperature of 1200 degrees C, only 26% of NH3 decomposed in a clean metal-free reactor, whereas a higher ratio of NH3 decomposition was realized in the presence of stainless steel. The activation energy in the clean reactor was calculated to be 0.965 +/- 0.004 eV. These results demonstrate the capability of our setup and shed new light on the elucidation of the vapor phase growth mechanism of group III-nitrides by MOVPE.

DOI： 10.1016/j.jcrysgro.2019.03.025

Web of Science

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Frontiers of Nitride Semiconductor Research FOREWORD

Chichibu Shigefusa F, Kumagai Yoshinao, Kojima Kazunobu, Deura Momoko, Akiyama Toru, Arita Munetaka, Fujioka Hiroshi, Fujiwara Yasufumi, Hara Naoki, Hashizume Tamotsu, Hirayama Hideki, Holmes Mark, Honda Yoshio, Imura Masataka, Ishii Ryota, Ishitani Yoshihiro, Iwaya Motoaki, Kamiyama Satoshi, Kangawa Yoshihiro, Katayama Ryuji, Kawakami Yoichi, Kawamura Takahiro, Kobayashi Atsushi, Kuzuhara Masaaki, Matsumoto Koh, Mori Yusuke, Mukai Takashi, Murakami Hisashi, Murotani Hideaki, Nakazawa Satoshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

APPLIED PHYSICS EXPRESS Vol. 12 ( 6 ) 2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13 - 13 2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 78 - 83 2019.4

Language：English Publishing type：Research paper (scientific journal)

This study examines the effect of (0 0 0 −1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6 × 10 15 cm −3 carbon, 6 × 10 15 cm −3 silicon, and 4 × 10 17 cm −3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5 μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1 1 −2 0] direction (or perpendicular to the [1 −1 0 0] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.

DOI： 10.1016/j.jcrysgro.2019.02.013

Web of Science

Scopus

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Reviewed

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

Jpn. J. Appl. Phys. Vol. 58 ( 4 ) 2019.3

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50 - 53 2019.3

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.

DOI： 10.1016/j.jcrysgro.2018.12.007

Web of Science

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS Vol. 12 ( 5 ) 2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58 - 65 2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 205 - 208 2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

DOI： 10.7567/1882-0786/aafdb9

Web of Science

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

APPLIED PHYSICS LETTERS Vol. 114 ( 1 ) 2019.1

　 PREV - NEXT 　

<HONDA, Yoshio>

Papers - HONDA, Yoshio