Papers - HONDA, Yoshio
-
Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed
Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC05 2013
-
Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed
Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE06 2013
-
Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed
Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC04 2013
-
Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed
Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;
Thin Solid Films Vol. 546 page： 108-113 2013
-
Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed
Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;
SPIE OPTO page： 86250K-86250K-6 2013
-
High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed
Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JK09 2013
-
Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed
Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB09 2013
-
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed
Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB11 2013
-
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed
Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE07 2013
-
Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed
Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Journal of Applied Physics Vol. 114 ( 15 ) page： 153506 2013
-
GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed
Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB03 2013
-
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed
Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB14 2013
-
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed
Amano, Hiroshi;
Japanese Journal of Applied Physics Vol. 52 ( 5R ) page： 50001 2013
-
Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed
Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 Vol. 10 ( 3 ) page： 369 - 372 2013
-
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB11 2013
-
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed
Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 5R ) page： 50001 2013
-
Stacking Faults and Luminescence Property of InGaN Nanowires
Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE06 2013
-
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB14 2013
-
Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates
Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min
Thin Solid Films Vol. 546 page： 108-113 2013
-
High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate
Sano, Tomotaka, Doi, Tomohiro, Inada, Shunko Albano, Sugiyama, Tomohiko, Honda, Yoshio, Amano, Hiroshi, Yoshino, Takashi
Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JK09 2013