Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

Y. Honda, N. Kameshiro, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 242 ( 1-2 ) page： 82-86 2002

Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 170 page： 789-794 2002

Fabrication of GaN dots array on Si substrate by selective area growth method Reviewed

YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 100 ( 643 ) page： 25 - 30 2001.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots.

Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 40 ( 3B ) page： 1896-1898 2001

Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino

Appl. Phys. Lett Vol. 79 ( 7 ) page： 955-957 2001

Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 230 ( 3-4 ) page： 346-350 2001

Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 230 ( 3-4 ) page： 346-350 2001

Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

S. Tanaka, Y. Honda, N. Sawaki, M. Hibino

Appl. Phys. Lett Vol. 79 ( 7 ) page： 955-957 2001

Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 40 ( 3B ) page： 1896-1898 2001

Fabrication of GaN micro-structures on (111) Si by selective area growth by MOVPE Reviewed

HONDA Y., OHTAKE Y., KAWAGUCHI Y., YAMAGUCHI M., SAWAKI N.

IEICE technical report. Electron devices Vol. 99 ( 616 ) page： 21 - 28 2000.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.

Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, and N. Sawaki

IPAP Conf. Series Vol. 1 page： 304-307 2000

Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, N. Sawaki

IPAP Conf. Series Vol. 1 page： 304-307 2000

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, and K. Hiramatsu

Phys. Stat. Sol. (a) Vol. 176 page： 553-556 1999

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 162 page： 687-692 1999

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 162 page： 687-692 1999

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, K. Hiramatsu

Phys. Stat. Sol. (a) Vol. 176 page： 553-556 1999

Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

Jpn. J. Appl. Phys. Vol. 37 ( 8B ) page： L966-L969 1998

Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, N. Sawaki

Jpn. J. Appl. Phys. Vol. 37 ( 8B ) page： L966-L969 1998

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