Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure

Tanaka Shigeyasu, Naito Akiyuki, Honda Yoshio, Sawaki Nobuhiko, Ichihashi Mikio

JOURNAL OF ELECTRON MICROSCOPY Vol. 56 ( 2 ) page： 37 - 42 2007.4

Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 19 ( 4 ) 2007.1

Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE

Hikosaka Toshiki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF CRYSTAL GROWTH Vol. 298 page： 207 - 210 2007.1

Carbon incorporation on (1101) facet of AlGaN in metal organic vapor phase epitaxy

Koide Norikatsu, Hikosaka Toshiki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 45 ( 10A ) page： 7655 - 7660 2006.10

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE

Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 243 ( 7 ) page： 1665 - 1668 2006.6

Series resistance in n-GaN/AIN/n-Si heterojunction structure

Kondo Hiroyuki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 45 ( 5A ) page： 4015 - 4017 2006.5

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. SDM Vol. 105 ( 94 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

CiNii Research

[Congenital middle ear cholesteatoma: experience in 48 cases]. Reviewed

Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

Nihon Jibiinkoka Gakkai kaiho Vol. 106 ( 9 ) page： 856 - 65 2003.9

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy.

Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

Japanese Journal of Applied Physics Vol. 40 ( 3B ) page： 1896 - 1898 2001

Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics

A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

DOI： 10.1143/jjap.40.1896

CiNii Research

Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy.

Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetada, Yamaguchi Masahito, Hiramatsu Kazumasa, Sawaki Nobuhiko

Japanese Journal of Applied Physics Vol. 37 ( 8B ) page： L966 - L969 1998

Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO<SUB>2</SUB>) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

DOI： 10.1143/jjap.37.l966

CiNii Research

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF MATERIALS CHEMISTRY C Vol. 8 ( 25 ) page： 8668 - 8675 2020.7

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 7 ) page： . 2020.7

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 217 ( 14 ) 2020.7

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 13 ( 6 ) page： . 2020.6

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 539 page： . 2020.6

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-V C H VERLAG GMBH

Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X-ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.

DOI： 10.1002/pssb.201900553

Web of Science

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 116 ( 12 ) 2020.3

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 35 ( 3 ) 2020.3

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

MICROELECTRONIC ENGINEERING Vol. 223 2020.2

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER

The quantum efficiency (QE) of an InGaN photocathode as a function of InGaN layer thickness (240, 100, and 70 nm) was investigated. To activate the sample surface, Cs and O were deposited on the surface in an ultrahigh-vacuum chamber. The QE for different optical power densities was measured by irradiating excitation light from the front and back sides of each sample. The QEs for InGaN layer thickness of 240, 100, and 70 nm with back-side irradiation were 0.9, 9.8, and 7.5%, respectively. For the thicknesses of 70 and 100 nm, the QEs were higher for back-side irradiation than for front-side irradiation, whereas for the thickness of 240 nm, the QE was higher for front-side irradiation. The InGaN layer thickness dependence of the QEs for back- and front-side irradiations was calculated using a continuous equation considering processes such as excitation, diffusion, recombination, and escape of electrons from the surface of the photocathode. The tendency of the experimental results, where QE was maximum at 100-120 nm, corresponded to that of the calculated results.

DOI： 10.1016/j.mee.2020.111229

Web of Science

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 2 ) 2020.2

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The decomposition of trimethylgallium (Ga(CH3)(3)) was examined under H-2 and N-2 atmospheres using a high-resolution (about 0.002 u) time-of-flight mass spectrometry system, which enabled the separation of N-2 and ethene (C2H4) signals. Under H-2 atmosphere, the main decomposition product was methane (CH4) formed by the hydrogenolysis of Ga(CH3)(3). However, under N-2 atmosphere, the main product is ethane (C2H6) at temperature lower than 660 degrees C. Above 660 degrees C, the C2H6 further decomposes into CH4, acetylene (C2H2) and C2H4, and the main components in the gas phase are C2H2 and C2H4 above 1000 degrees C. Since these are effective carbon dopants, the molar ratio of H-2 to the Ga(CH3)(3) raw material in the carrier gas should be maintained above 300 to inhibit the formation of hydrocarbons in N-2. (C) 2020 The Japan Society of Applied Physics

DOI： 10.35848/1347-4065/ab6fb0

Web of Science

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Papers - HONDA, Yoshio