Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 539 page： . 2020.6

Impact of high-temperature implantation of Mg ions into GaN International journal

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) page： . 2020.5

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

Simultaneous Growth of Multi-Color Micro LEDs Based on Super Thin Micro-Platelets with Various Surface Areas

Cai Wentao, Kushimoto Maki, Manato Deki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2020.1 ( 0 ) page： 3111 - 3111 2020.2

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

Microscopy (Oxford, England) Vol. 69 ( 1 ) page： 1 - 10 2020.2

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 38 ( 1 ) 2020.1

Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

Journal of the Japanese Association for Crystal Growth Vol. 47 ( 3 ) page： n/a 2020

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japanese Association for Crystal Growth

<p> The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

DOI： 10.19009/jjacg.47-3-04

CiNii Research

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) page： 349 - 352 2020

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

JOURNAL OF APPLIED PHYSICS Vol. 126 ( 21 ) 2019.12

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current International journal

Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 114 ( 23 ) 2019.6

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates International journal

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors International journal

Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability International journal

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2019.1 ( 0 ) page： 3122 - 3122 2019.2

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano, T; Chokawa, K; Araidai, M; Shiraishi, K; Oshiyama, A; Kusaba, A; Kangawa, Y; Tanaka, A; Honda, Y; Amano, H

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page： . 2019

Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

Kashima Masahiro, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, Takashi Meguro

JSAP Annual Meetings Extended Abstracts Vol. 2018.1 ( 0 ) page： 1670 - 1670 2018.3

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

Yates, L; Pavlidis, G; Graham, S; Usami, S; Nagamatsu, K; Honda, Y; Amano, H

PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018) page： 831 - 837 2018

Effect of thermal treatment on the quantu efficiency of NEA-InGaN photocatode

Kashima Masahiro, Iijima Hokuto, Nishitani Tomohiro, Sato Daiki, Honda Yoshio, Amano Hiroshi, Meguro Takashi

JSAP Annual Meetings Extended Abstracts Vol. 2017.1 ( 0 ) page： 1554 - 1554 2017.3

A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

Nagasawa Yosuke, Yamada Kiho, Nagai Shouko, Hirano Akira, Ipponmatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

JSAP Annual Meetings Extended Abstracts Vol. 2017.1 ( 0 ) page： 1136 - 1136 2017.3

Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

Matsushita Junya, Nagamatsu Kentarou, Yang Xu, Tanaka Atushi, Kushimto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2016.2 ( 0 ) page： 2888 - 2888 2016.9

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Papers - HONDA, Yoshio