Papers - HONDA, Yoshio
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P-GaN by Mg Ion Implantation for Power Device Applications
SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi
IEICE technical report. Electron devices Vol. 114 ( 56 ) page: 109-112 - 112 2014.5
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Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask International journal
Ji-Su Son, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 5 ) 2014.5
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In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy International journal
Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano
JOURNAL OF APPLIED PHYSICS Vol. 115 ( 9 ) 2014.3
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Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays International journal
Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 3 ) 2014.3
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Novel activation process for Mg-implanted GaN International journal
Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano
JOURNAL OF CRYSTAL GROWTH Vol. 388 page: 112 - 115 2014.2
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Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching International journal
Ji-Su Son, Yoshio Honda, Hiroshi Amano
OPTICS EXPRESS Vol. 22 ( 3 ) page: 3585 - 3592 2014.2
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Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed
page: 90030E-90030E-6 2014
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Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed
Vol. 53 ( 5S1 ) page: 05FL01 2014
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Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed
Vol. 22 ( 3 ) page: 3585-3592 2014
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Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed
Vol. 11 ( 3‐4 ) page: 722-725 2014
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Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed
Vol. 53 ( 3 ) page: 30306 2014
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Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed
Vol. 16 ( 11 ) page: 2273-2282 2014
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X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed
Vol. 11 ( 3‐4 ) page: 393-396 2014
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In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed
Vol. 115 ( 9 ) page: 94906 2014
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Novel activation process for Mg-implanted GaN Reviewed
Vol. 388 page: 112-115 2014
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Recombination dynamics and internal quantum efficiency in InGaN nanowires Reviewed
Vol. 11 ( 3-4 ) page: 652 - 655 2014
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X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed
Vol. 11 ( 3-4 ) page: 393 - 396 2014
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Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed International journal
Vol. 11 ( 3-4 ) page: 722 - 725 2014
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Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate International journal
Kouhei Yamashita, Tomohiko Sugiyama, Makoto Iwai, Yoshio Honda, Takashi Yoshino, Hiroshi Amano
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII Vol. 9003 2014
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Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique International journal
Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano
CRYSTENGCOMM Vol. 16 ( 11 ) page: 2273 - 2282 2014