Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Electroluminescence Pattern Investigation of the PIN Diode on GaN Substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2016.2 ( 0 ) page： 2867 - 2867 2016.9

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

Honda Yoshio

Japanese Journal of Applied Physics Vol. 55 2016

Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed

Honda Yoshio

Japanese Journal of Applied Physics Vol. 55 2016

HVPE and VLS-HVPE synthesis of vertical and horizontal GaN nanowires

Lekhal Kaddour, Mitsunari Tadashi, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2014.2 ( 0 ) page： 1745 - 1745 2014.9

Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates

Son Ji-Su, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Baik Kwang Hyeon, Seo Yong Gon, Hwang Sung-Min

THIN SOLID FILMS Vol. 546 page： 108 - 113 2013.11

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Murotani Hideaki, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JOURNAL OF APPLIED PHYSICS Vol. 114 ( 15 ) 2013.10

Fabrication of InGaN/GaN Multiple Quantum Wells on (1(1)over-bar01) GaN

Tanikawa Tomoyuki, Sano Tomotaka, Kushimoto Maki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

Sano Tomotaka, Doi Tomohiro, Inada Shunko Albano, Sugiyama Tomohiko, Honda Yoshio, Amano Hiroshi, Yoshino Takashi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

Yamada Takaya, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

Nakagawa Shinta, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Stacking Faults and Luminescence Property of InGaN Nanowires

Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

Ohata Toshiya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

Son Ji-Su, Miao Cao, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Seo Yong Gon, Hwang Sung-Min, Baik Kwang Hyeon

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern

Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires

Murotani Hideaki, Andoh Hiroya, Tsukamoto Takehiko, Sugiura Toko, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masatoshi, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) 2013.8

I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source

KAWAI Yohjiro, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji, Hori Masaru

The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP Vol. 2013 ( 0 ) page： 5 - 7 2013

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Mechanical Engineers

Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

DOI： 10.1299/jsmeiip.2013.5

Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Component parts and materials Vol. 112 ( 33 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate

Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 249 ( 3 ) page： 468 - 471 2012.3

Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

Hashimoto Shin, Akita Katsushi, Yamamoto Yoshiyuki, Ueno Masaki, Nakamura Takao, Takeda Kenichiro, Iwaya Motoaki, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 209 ( 3 ) page： 501 - 504 2012.3

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