Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1425?1428 2006

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1915?1918 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 2006

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (b) Vol. 243 ( 7 ) page： 1665?1668 - 1668 2006

Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1992?1996 2006

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1425?1428 2006

Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 5A ) page： 4015?4017 2006

Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Jpn. J. Appl. Phys. Vol. 45 ( 10A ) page： 7655-7660 2006

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1461?1465 2006

Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 3 ( 6 ) page： 1915?1918 2006

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 105 ( 90 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Component parts and materials Vol. 105 ( 92 ) page： 69 - 74 2005.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2125? 2128 2005

Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth Vol. 284 ( 3-4 ) page： 341?346 2005

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (a) Vol. 202 ( 6 ) page： 1048?1052 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 361-364 2005

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 251-254 2005

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Surf. Science Vol. 243 ( 1-4 ) page： 178-182 2005

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Papers - HONDA, Yoshio